Si5920DC
Vishay Siliconix
Dual N-Channel 1.5 V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
8
RDS(on) (Ω)
ID (A)
0.032 at VGS = 4.5 V
4a
0.036 at VGS = 2.5 V
4a
0.045 at VGS = 1.8 V
4a
0.054 at VGS = 1.5 V
4a
Qg (Typ.)
7.3 nC
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET: 1.5 V Rated
• Ultra Low On-Resistance in Compact,
Thermally Enhanced ChipFET® Package
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch for Portable Applications
- Guaranteed Operation at VGS = 1.5 V Critical for
Optimized Design and Space Savings
1206-8 ChipFET® (Dual)
1
S1
D1
D1
D2
G1
D1
S2
D2
G2
D2
Marking Code
CD XXX
Bottom View
G1
Lot Traceability
and Date Code
G2
Part #
Code
Ordering Information: Si5920DC-T1-E3 (Lead (Pb)-free)
Si5920DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
S2
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Drain Current (TJ = 150 °C)
IDM
Pulsed Drain Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
ID
d, e
IS
PD
TJ, Tstg
Limit
8
±5
4a
4a
4a
4a
25
2.6
1.7c
3.12
2.0
2.04b, c
1.3b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
RthJA
t≤5s
50
60
Maximum Junction-to-Ambientb, f
°C/W
RthJF
30
40
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The 1206-8 ChipFET is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 90 °C/W.
Document Number: 73490
S10-0548-Rev. D, 08-Mar-10
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1
Si5920DC
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
8
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
V
8.2
ID = 250 µA
mV/°C
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
1
V
IGSS
VDS = 0 V, VGS = ± 5 V
± 100
ns
VDS = 8 V, VGS = 0 V
1
VDS = 8 V, VGS = 0 V, TJ = 55 °C
10
Gate-Source Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
a
Forward Transconductance
RDS(on)
gfs
VDS ≤ 5 V, VGS = 4.5 V
- 2.6
0.3
25
µA
A
VGS = 4.5 V, ID = 6.8 A
0.025
VGS = 2.5 V, ID = 6.3 A
0.0285
0.036
VGS = 1.8 V, ID = 2.5 A
0.036
0.045
VGS = 1.5 V, ID = 1.8 A
0.041
0.054
VDS = 4 V, ID = 6.8 A
18
VDS = 4 V, VGS = 0 V, f = 1 MHz
230
0.032
Ω
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
680
140
VDS = 4 V, VGS = 5 V, ID = 6.8 A
VDS = 4 V, VGS = 4.5 V, ID = 6.8 A
tr
8
12
7.3
11
0.84
nC
1.26
f = 1 MHz
td(on)
td(off)
pF
VDD = 4 V, RL = 0.73 Ω
ID ≅ 5.5 A, VGEN = 4.5 V, Rg = 1 Ω
tf
1.8
2.7
8
12
11
17
18
27
7
11
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
2.6
25
IS = 2.6 A, VGS = 0 V
IF = 2.6 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.8
1.2
V
12
18
ns
3
5
nC
7
5
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73490
S10-0548-Rev. D, 08-Mar-10
Si5920DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
8
25
VGS = 5 V thru 2 V
VGS = 1.8 V
I D - Drain Current (A)
I D - Drain Current (A)
20
15
VGS = 1.5 V
10
6
TC = - 55 °C
4
TC = 25 °C
TC = 125 °C
2
5
VGS = 1 V
0
0.0
1.0
2.0
0
0.0
3.0
0.3
0.9
1.2
1.5
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.06
1000
VGS = 1.5 V
900
800
0.05
C - Capacitance (pF)
RDS(on) - D to S On-Resistance (Ω)
0.6
0.04
VGS = 1.8 V
VGS = 2.5 V
0.03
Ciss
700
600
500
400
Coss
300
200
VGS = 4.5 V
Crss
100
0.02
0
0
5
10
15
20
25
30
0
1
2
3
4
5
6
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
RDS(on) vs. Drain Current
Capacitance
7
8
1.6
5
1.4
4
VDS = 4 V
RDS(on) - On-Resistance
(Normalized)
V GS - Gate-to-Source Voltage (V)
ID = 6.8 A
VDS = 6.4 V
3
2
VGS = 4.5 V, ID = 5 A
VGS = 1.5 V, ID = 1.8 A
1.2
VGS = 2.5 V, ID = 4.8 A
VGS = 1.8 V, ID = 2.5 A
1.0
0.8
1
0
0
2
4
6
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 73490
S10-0548-Rev. D, 08-Mar-10
8
10
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si5920DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.06
RDS(on) - Drain-to-Source On-Resistance (Ω)
I S - Source Current (A)
10.0
TA = 150 °C
TA = 25 °C
1.0
0.1
0.0
0.05
TA = 125 °C
0.04
0.03
TA = 25 °C
0.02
0.2
0.4
0.6
0.8
1.0
0
1
VSD - Source-to-Drain Voltage (V)
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Forward Diode Voltage vs. Temperature
RDS(on) vs. VGS vs. Temperature
0.9
50
ID = 250 µA
0.8
40
30
Power (W)
VGS(th) (V)
0.7
0.6
0.5
20
0.4
10
0.3
0.2
- 50
- 25
0
25
50
75
100
125
0
10-4
150
10-3
10-2
10-1
1
10
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
100
600
100
Limited by RDS(on)*
10 ms
I D - Drain Current (A)
10
100 ms
1s
10 s
1
0.1
0.01
0.1
DC
TA = 25 °C
Single Pulse
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum V GS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
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Document Number: 73490
S10-0548-Rev. D, 08-Mar-10
Si5920DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
4
10
8
Power Dissipation (W)
ID - Drain Current (A)
3
6
Package Limited
4
2
1
2
0
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73490
S10-0548-Rev. D, 08-Mar-10
www.vishay.com
5
Si5920DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 90 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73490.
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Document Number: 73490
S10-0548-Rev. D, 08-Mar-10
Legal Disclaimer Notice
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Vishay
Disclaimer
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Revision: 01-Jan-2022
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Document Number: 91000
