Si5943DU
Vishay Siliconix
Dual P-Channel 12-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)a
0.064 at VGS = - 4.5 V
- 6a
0.089 at VGS = - 2.5 V
- 6a
0.120 at VGS = - 1.8 V
a
VDS (V)
- 12
-6
• Halogen-free
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
ChipFET® Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.8 mm Profile
Qg (Typ.)
6 nC
PowerPAK ChipFET Dual
• Load Switch, PA Switch, and Charger Switch for Portable
Devices
2
S1
8
3
G1
S1
G2
D2
S2
4
S2
D1
7
6
COMPLIANT
APPLICATIONS
1
D1
RoHS
Marking Code
D2
DC
G1
XXX
G2
Lot Traceability
and Date Code
5
Part #
Code
Bottom View
Ordering Information: Si5943DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1
D2
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
IS
PD
TJ, Tstg
Soldering Recommendations (Peak Temperature)d, e
Unit
V
- 6a
- 6a
- 5b, c
- 4b, c
- 20
- 6.9
IDM
Pulsed Drain Current
Continuous Source-Drain Diode Current
Limit
- 12
±8
A
- 1.9b, c
8.3
5.3
2.3b, c
1.5b, c
- 55 to 150
260
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
RthJA
t≤5s
45
55
Maximum Junction-to-Ambientb, f
°C/W
RthJC
Maximum Junction-to-Case (Drain)
Steady State
12
15
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 105 °C/W.
Document Number: 73669
S-81449-Rev. B, 23-Jun-08
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1
Si5943DU
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 12
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
ΔVDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = - 250 µA
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
V
- 11
mV/°C
2.1
- 0.4
-1
V
± 100
nA
VDS = - 12 V, VGS = 0 V
-1
VDS = - 12 V, VGS = 0 V, TJ = 55 °C
- 10
VDS ≤ - 5 V, VGS = - 4.5 V
- 20
µA
A
VGS = - 4.5 V, ID = - 3.6 A
0.053
0.064
VGS = - 2.5 V, ID = - 3.1 A
0.073
0.089
VGS = - 1.8 V, ID = - 0.83 A
0.098
0.120
VDS = - 6 V, ID = - 3.6 A
11
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
460
VDS = - 6 V, VGS = 0 V, f = 1 MHz
115
VDS = - 6 V, VGS = - 8 V, ID = - 5 A
VDS = - 6 V, VGS = - 4.5 V, ID = - 5 A
td(off)
10
15
6
12
0.9
Ω
6.4
8
15
VDD = - 6 V, RL = 1.5 Ω
ID ≅ - 4 A, VGEN = - 4.5 V, Rg = 1 Ω
40
60
40
60
tf
15
25
td(on)
5
10
15
25
tr
td(off)
nC
1.65
f = 1 MHz
td(on)
tr
pF
170
VDD = - 6 V, RL = 1.5 Ω
ID ≅ - 4 A, VGEN = - 8 V, Rg = 1 Ω
tf
23
35
7
15
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
TC = 25 °C
- 6.9
20
IS = - 4 A, VGS = 0 V
- 0.8
- 1.2
A
V
Body Diode Reverse Recovery Time
trr
30
60
ns
Body Diode Reverse Recovery Charge
Qrr
14
30
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = - 4 A, dI/dt = 100 A/µs, TJ = 25 °C
12
18
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73669
S-81449-Rev. B, 23-Jun-08
Si5943DU
Vishay Siliconix
TYPICAL CHARACTERISTICS
VGS = 3 V
VGS = 2.5 V
VGS = 4.5 V
VGS = 4 V
16
I D - Drain Current (A)
10
VGS = 5 V
8
I D - Drain Current (A)
20
25 °C, unless otherwise noted
12
VGS = 2 V
VGS = 3.5 V
8
4
TC = 125 °C
VGS = 1.5 V
4
6
2
TC = 25 °C
VGS = 1 V
0
0.0
0.5
1.0
1.5
2.0
2.5
TC = - 55 °C
0
0.0
3.0
1.0
1.5
2.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.25
2.5
900
VGS = 1.8 V
750
0.20
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0.5
0.15
VGS = 2.5 V
0.10
VGS = 4.5 V
600
C iss
450
300
C oss
0.05
150
C rss
0.00
0
0
4
8
12
16
20
0
2
I D - Drain Current (A)
4
8
10
12
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
8
1.6
VGS = 4.5 V
ID = 3.6 A
ID = 5 A
1.4
6
R DS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
6
VDS = 6 V
4
VDS = 9.6 V
2
1.2
1.0
0.8
0
0
3
6
9
Q g - Total Gate Charge (nC)
Gate Charge
Document Number: 73669
S-81449-Rev. B, 23-Jun-08
12
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si5943DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.25
R DS(on) - Drain-to-Source On-Resistance (Ω)
20
I S - Source Current (A)
10
TJ = 150 °C
TJ = 25 °C
0.20
0.15
TA = 125 °C
0.10
TA = 25 °C
0.05
1
0.0
ID = 3.6 A
0.2
0.4
0.6
1.0
0.8
1.2
0
1.4
1
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
3
4
5
On-Resistance vs. Gate-to-Source Voltage
0.8
40
ID = 250 µA
0.7
30
0.6
Power (W)
VGS(th) (V)
2
VGS - Gate-to-Source Voltage (V)
0.5
20
10
0.4
0.3
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
100
600
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by R DS(on)*
I D - Drain Current (A)
10
1 ms
10 ms
1
100 ms
1s
10 s
DC
TA = 25 °C
Single Pulse
0.1
BVDSS limited
0.01
0.1
1
10
100
V DS - Drain-to-Source Voltage (V)
* V GS > minimum VGS at which R DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 73669
S-81449-Rev. B, 23-Jun-08
Si5943DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
12
8
Power Dissipation (W)
I D - Drain Current (A)
10
8
Package Limited
6
4
6
4
2
2
0
0
0
25
50
75
100
125
150
25
50
75
100
125
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power Derating
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73669
S-81449-Rev. B, 23-Jun-08
www.vishay.com
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Si5943DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
t
1. Duty Cycle, D = t1
2
2. Per Unit Base = R thJA = 87 °C/W
3. TJM - TA = PDM Z thJA(t)
4. Surface Mounted
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
Square Wave Pulse Duration (s)
10 -1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73669.
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Document Number: 73669
S-81449-Rev. B, 23-Jun-08
Legal Disclaimer Notice
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Vishay
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Revision: 01-Jan-2022
1
Document Number: 91000
