SI6413DQ-T1-E3

Si6413DQ Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.010 at VGS = - 4.5 V - 8.8 - 20 0.013 at VGS = - 2.5 V - 7.6 0.016 at VGS = - 1.8 V - 6.8 • Halogen-free • TrenchFET® Power MOSFET RoHS COMPLIANT APPLICATIONS • Load Switch • PA Switch • Charger Switch S* TSSOP-8 D 1 S 2 S 3 G 4 Si6413DQ G * Source Pins 2, 3, 6 and 7 must be tied common. 8 D 7 S 6 S 5 D Top View D Ordering Information: Si6413DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a IS TA = 25 °C TA = 70 °C PD - 7.2 - 7.0 - 5.7 - 30 - 1.35 - 0.95 1.5 1.05 1.0 0.67 TJ, Tstg Operating Junction and Storage Temperature Range V - 8.8 IDM Pulsed Drain Current (10 µs Pulse Width) Maximum Power Dissipationa ID Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot Symbol t ≤ 10 s Steady State Steady State RthJA RthJF Typical Maximum 60 83 100 120 35 45 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 72084 S-80682-Rev. B, 31-Mar-08 www.vishay.com 1 Si6413DQ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. - 0.40 Max. Unit Static VGS(th) VDS = VGS, ID = - 400 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) VDS = - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 8.8 A 0.008 0.010 RDS(on) VGS = - 2.5 V, ID = - 7.6 A 0.010 0.013 VGS = - 1.8 V, ID = - 6.8 A 0.013 0.016 gfs VDS = - 15 V, ID = - 8.8 A 45 VSD IS = - 1.3 A, VGS = 0 V - 0.58 - 1.1 69 105 VDS = - 10 V, VGS = - 5 V, ID = - 8.8 A 9.5 Gate Threshold Voltage Drain-Source On-State Resistance a Forward Transconductancea Diode Forward Voltage a - 0.8 V ± 100 nA VDS = - 16 V, VGS = 0 V -1 VDS = - 16 V, VGS = 0 V, TJ = 70 °C - 10 µA - 20 A Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC 15.5 IF = - 1.3 A, di/dt = 100 A/µs 55 85 120 200 305 470 160 250 90 150 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 30 VGS = 5 thru 2 V 1.5 V 24 I D - Drain Current (A) I D - Drain Current (A) 24 18 12 6 18 12 TC = 125 °C 6 25 °C 1.0 V 0 0 www.vishay.com 2 1 2 3 4 5 0 0.0 0.2 0.4 0.6 - 55 °C 0.8 1.0 1.2 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1.4 1.6 Document Number: 72084 S-80682-Rev. B, 31-Mar-08 Si6413DQ Vishay Siliconix 0.030 8000 0.024 6400 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.018 VGS = 1.8 V 0.012 VGS = 2.5 V 0.006 VGS = 4.5 V Ciss 4800 3200 Coss 1600 Crss 0.000 0 0 6 12 18 24 30 0 4 ID - Drain Current (A) 8 20 Capacitance 1.6 5 VGS = 4.5 V ID = 8.8 A VDS = 10 V ID = 8.8 A 1.4 4 R DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 16 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 3 2 1.2 1.0 0.8 1 0.6 - 50 0 0 14 28 42 56 70 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) Gate Charge On-Resistance vs. Junction Temperature 0.06 30 TJ = 150 °C 0.05 R DS(on) - On-Resistance (Ω) 10 I S - Source Current (A) 12 1 TJ = 25 °C 0.04 ID = 8.8 A 0.03 0.02 0.01 0.1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 72084 S-80682-Rev. B, 31-Mar-08 1.2 0 1 2 3 4 5 6 7 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si6413DQ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 60 50 40 ID = 400 µA Power (W) V GS(th) Variance (V) 0.2 0.0 30 20 - 0.2 10 - 0.4 - 50 - 25 0 25 50 75 100 125 0 10-2 150 10-1 1 TJ - Temperature (°C) 10 100 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by R DS(on)* 1 ms ID - Drain Current (A) 10 10 ms 1 100 ms 1s 0.1 TC = 25 °C Single Pulse 10 s DC 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 100 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72084 S-80682-Rev. B, 31-Mar-08 Si6413DQ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72084. Document Number: 72084 S-80682-Rev. 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