Si6465DQ
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)
0.012 at VGS = - 4.5 V
± 8.8
-8
0.017 at VGS = - 2.5 V
± 7.4
0.025 at VGS = - 1.8 V
± 6.0
• Halogen-free
• TrenchFET® Power MOSFETs: 1.8 V Rated
RoHS
COMPLIANT
S*
TSSOP-8
G
D
1
S
2
S
3
G
4
Si6465DQ
8
D
7
S
6
S
5
D
* Source Pins 2, 3, 6 and 7
must be tied common
Top View
D
P-Channel MOSFET
Ordering Information: Si6465DQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
-8
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a, b
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a, b
Maximum Power Dissipationa, b
TA = 25 °C
TA = 70 °C
V
± 8.8
ID
± 7.1
IDM
± 30
IS
- 1.5
A
1.5
PD
W
1.0
TJ, Tstg
Operating Junction and Storage Temperature Range
Unit
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Symbol
t ≤ 10 s
Steady State
RthJA
Typical
Maximum
83
90
Unit
°C/W
Notes:
a. Surface Mounted on FR4 board.
b. t ≤ 10 s.
Document Number: 70812
S-80682-Rev. D, 31-Mar-08
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Si6465DQ
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VGS(th)
VDS = VGS, ID = - 250 µA
- 0.45
Typ.
Max.
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
V
VDS = 0 V, VGS = ± 8 V
± 100
VDS = - 6.4 V, VGS = 0 V
-1
VDS = - 6.4 V, VGS = 0 V, TJ = 70 °C
- 25
VDS ≥ - 5 V, VGS = - 4.5 V
RDS(on)
- 20
nA
µA
A
VGS = - 4.5 V, ID = - 8.8 A
0.009
0.012
VGS = - 2.5 V, ID = - 7.4 A
0.0125
0.017
VGS = - 1.8 V, ID = - 6.0 A
0.0185
0.025
gfs
VDS = - 5 V, ID = - 8.8 A
34
VSD
IS = - 1.5 A, VGS = 0 V
- 0.65
- 1.1
50
80
VDS = - 6 V, VGS = - 4.5 V, ID = - 8.8 A
10
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
8
Turn-On Delay Time
td(on)
30
Rise Time
Turn-Off Delay Time
tr
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
VDD = - 6 V, RL = 6 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω
IF = - 1.5 A, di/dt = 100 A/µs
nC
60
60
100
210
400
130
250
70
120
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 70812
S-80682-Rev. D, 31-Mar-08
Si6465DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
30
VGS = 5 thru 2 V
24
I D - Drain Current (A)
I D - Drain Current (A)
24
18
12
1.5 V
6
18
12
TC = 125 °C
6
25 °C
- 55 °C
1V
0
0
0
2
4
8
6
0
0.5
VDS - Drain-to-Source Voltage (V)
2.0
2.5
Transfer Characteristics
0.10
10000
0.08
8000
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
1.5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
0.06
0.04
VGS = 1.8 V
VGS = 2.5 V
0.02
1.0
Ciss
6000
4000
Coss
2000
Crss
VGS = 4.5 V
0
0
6
12
18
24
0
0
30
4
6
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
8
1.4
4.5
VGS = 4.5 V
ID = 8.8 A
VDS = 6 V
ID = 8.8 A
3.6
R DS(on) - On-Resistance
(Normalized)
V GS - Gate-to-Source Voltage (V)
2
2.7
1.8
1.2
VGS = 1.8 V
ID = 6.0 A
1.0
0.8
0.9
0
0
10
20
30
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 70812
S-80682-Rev. D, 31-Mar-08
40
50
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si6465DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.10
10
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
30
TJ = 150 °C
TJ = 25 °C
1
0.00
0.08
0.06
0.04
ID = 8.8 A
0.02
0
0.2
0.4
0.6
0.8
1.0
0
1.2
4
6
8
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
60
0.4
ID = 250 µA
0.3
50
40
0.2
Power (W)
V GS(th) Variance (V)
2
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
0.1
30
20
0.0
10
- 0.1
- 0.2
- 50
- 25
0
25
50
75
100
125
150
0
0.01
TJ - Temperature (°C)
0.1
1
Time (s)
10
30
Single Pulse Power
Threshold Voltage
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
t1
0.05
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 90 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?70812.
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Document Number: 70812
S-80682-Rev. D, 31-Mar-08
Legal Disclaimer Notice
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Revision: 01-Jan-2022
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Document Number: 91000