Si6467BDQ
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 12
RDS(on) (Ω)
ID (A)
0.0125 at VGS = - 4.5 V
- 8.0
0.0155 at VGS = - 2.5 V
- 7.0
0.020 at VGS = - 1.8 V
- 6.0
• Halogen-free
• TrenchFET® Power MOSFETs
Pb-free
Available
RoHS*
COMPLIANT
S*
TSSOP-8
D
1
S
2
S
3
G
4
Si6467BDQ
G
8 D
7 S
* Source Pins 2, 3, 6 and 7
must be tied common.
6 S
5 D
Top View
D
Ordering Information: Si6467BDQ-T1
Si6467BDQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS
- 12
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
Continuous Source Current (Diode Conduction)a
IS
TA = 25 °C
TA = 70 °C
PD
- 6.8
- 6.5
- 5.4
- 30
- 1.35
- 0.95
1.5
1.05
1.0
0.67
TJ, Tstg
Operating Junction and Storage Temperature Range
V
- 8.0
IDM
Pulsed Drain Current (10 µs Pulse Width)
Maximum Power Dissipationa
ID
Unit
- 55 to 150
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t ≤ 10 s
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
65
83
100
120
43
52
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72087
S-80682-Rev. D, 31-Mar-08
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1
Si6467BDQ
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
- 0.45
Typ.
Max.
Unit
Static
VGS(th)
VDS = VGS, ID = - 450 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
VDS = - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 8.0 A
0.010
0.0125
RDS(on)
VGS = - 2.5 V, ID = - 7.0 A
0.0125
0.0155
VGS = - 1.8 V, ID = - 5.8 A
0.016
0.020
gfs
VDS = - 5 V, ID = - 8.0 A
44
VSD
IS = - 1.5 A, VGS = 0 V
- 0.56
- 1.1
46
70
Gate Threshold Voltage
Drain-Source On-State Resistance
a
Forward Transconductancea
Diode Forward Voltage
a
- 0.85
V
± 100
nA
VDS = - 12 V, VGS = 0 V
-1
VDS = - 12 V, VGS = 0 V, TJ = 70 °C
- 25
- 20
µA
A
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
VDS = - 6 V, VGS = - 4.5 V, ID = - 8.0 A
15.5
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
nC
5
45
70
85
130
220
400
VDD = - 6 V, RL = 6 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω
155
235
IF = - 1.5 A, di/dt = 100 A/µs
140
210
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
30
VGS = 5 thru 2 V
24
24
I D - Drain Current (A)
I D - Drain Current (A)
1.5 V
18
12
6
18
12
6
25 °C
1V
0
0
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2
1
2
3
4
TC = 125 °C
5
0
0.0
0.5
- 55 °C
1.0
1.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2.0
Document Number: 72087
S-80682-Rev. D, 31-Mar-08
Si6467BDQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
6000
5000
0.024
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0.030
VGS = 1.8 V
0.018
VGS = 2.5 V
0.012
VGS = 4.5 V
0.006
Ciss
4000
3000
Coss
2000
Crss
1000
0.000
0
0
6
12
18
24
30
0
2
ID - Drain Current (A)
4
8
10
12
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.4
6
VGS = 4.5 V
ID = 8 A
VDS = 6 V
ID = 8 A
5
1.2
R DS(on) - On-Resistance
(Normalized)
V GS - Gate-to-Source Voltage (V)
6
4
3
2
1.0
0.8
1
0.6
- 50
0
0
12
24
36
48
60
- 25
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Qg - Total Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
0.06
30
10
0.05
TJ = 150 °C
1
RDS(on) - On-Resistance (Ω)
I S - Source Current (A)
0
TJ = 25 °C
0.04
ID = 8 A
0.03
0.02
0.01
0.1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 72087
S-80682-Rev. D, 31-Mar-08
1.2
0
1
2
3
4
5
6
7
8
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
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Si6467BDQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4
50
40
0.2
ID = 250 µA
30
Power (W)
V GS(th) Variance (V)
0.3
0.1
20
0.0
10
- 0.1
- 0.2
- 50
- 25
0
25
50
75
100
125
0
10-2
150
10-1
1
10
100
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited
by RDS(on)*
I D - Drain Current (A)
10
10 ms
1
100 ms
1s
0.1
10 s
DC
TC = 25 °C
Single Pulse
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 100 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 72087
S-80682-Rev. D, 31-Mar-08
Si6467BDQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72087.
Document Number: 72087
S-80682-Rev. D, 31-Mar-08
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Revision: 01-Jan-2022
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Document Number: 91000