Si6473DQ
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) (Ω)
ID (A)
0.0125 at VGS = - 4.5 V
- 9.5
0.016 at VGS = - 2.5 V
- 8.5
0.0215 at VGS = - 1.8 V
- 7.3
• Halogen-free
• TrenchFET® Power MOSFETs
RoHS
COMPLIANT
S*
G
TSSOP-8
D
1
8
D
S
2
7
S
S
3
6
S
G
4
5
D
Si6473DQ
* Source Pins 2, 3, 6 and 7
must be tied common.
D
Top View
Ordering Information: Si6473DQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS
- 20
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
Continuous Source Current (Diode Conduction)a
IS
TA = 25 °C
TA = 70 °C
PD
- 6.2
- 5.9
- 4.9
- 30
- 1.5
- 0.95
1.75
1.08
1.14
0.69
TJ, Tstg
Operating Junction and Storage Temperature Range
V
- 9.5
IDM
Pulsed Drain Current (10 µs Pulse Width)
Maximum Power Dissipationa
ID
Unit
- 55 to 150
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t ≤ 10 s
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
55
70
95
115
35
45
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71164
S-81056-Rev. C, 12-May-08
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Si6473DQ
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VGS(th)
VDS = VGS, ID = - 250 µA
- 0.45
Typ.
Max.
Unit
Static
Gate Threshold Voltage
IGSS
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
V
VDS = 0 V, VGS = ± 8 V
± 100
VDS = - 16 V, VGS = 0 V
-1
VDS = - 16 V, VGS = 0 V, TJ = 70 °C
- 10
VDS = - 5 V, VGS = - 4.5 V
20
RDS(on)
Forward Transconductancea
Diode Forward Voltagea
µA
A
VGS = - 4.5 V, ID = - 9.5 A
Drain-Source On-State Resistancea
nA
0.010
0.0125
VGS = - 2.5 V, ID = - 8.5 A
0.013
0.016
VGS = - 1.8 V, ID = - 7.5 A
0.0175
0.0215
gfs
VDS = - 15 V, ID = - 9.5 A
45
VSD
IS = - 1.5 A, VGS = 0 V
- 0.64
- 1.1
47.5
70
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VDS = - 10 V, VGS = - 5 V, ID = - 9.5 A
Gate-Drain Charge
Qgd
7.6
Turn-On Delay Time
td(on)
42
VDD = - 10 V, RL = 15 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
nC
7.6
IF = - 1.5 A, dI/dt = 100 A/µs
60
33
50
220
330
95
140
50
80
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
30
VGS = 5 thru 2 V
24
I D - Drain Current (A)
I D - Drain Current (A)
24
1.5 V
18
12
18
12
TC = 125 °C
6
6
25 °C
1V
- 55 °C
0
0
0
3
6
9
VDS - Drain-to-Source Voltage (V)
Output Characteristics
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2
12
0
0.5
1.0
1.5
2.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 71164
S-81056-Rev. C, 12-May-08
Si6473DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.030
10000
0.020
VGS = 1.8 V
VGS = 2.5 V
0.015
VGS = 4.5 V
0.010
8000
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0.025
Ciss
6000
4000
Coss
2000
0.005
0
Crss
0
0
6
12
18
24
30
0
3
ID - Drain Current (A)
6
15
Capacitance
5
1.6
VDS = 10 V
ID = 9.5 A
VGS = 4.5 V
ID = 9.5 A
4
3
2
1
(Normalized)
1.4
RDS(on) - On-Resistance
V GS - Gate-to-Source Voltage (V)
12
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
1.2
1.0
0.8
0
0
10
20
30
40
0.6
- 50
50
Qg - Total Gate Charge (nC)
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
0.04
R DS(on) - On-Resistance (Ω)
30
I S - Source Current (A)
9
TJ = 150 °C
10
TJ = 25 °C
0.03
ID = 9.5 A
0.02
0.01
0
1
0
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 71164
S-81056-Rev. C, 12-May-08
1.2
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
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Si6473DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
0.4
50
40
ID = 250 µA
Power (W)
V GS(th) Variance (V)
0.2
0.0
30
20
- 0.2
10
- 0.4
- 50
- 25
0
25
50
75
100
125
150
0
10-2
10-1
1
10
100
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 95 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?71164.
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Document Number: 71164
S-81056-Rev. C, 12-May-08
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Revision: 01-Jan-2022
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Document Number: 91000