SI6562DQ-T1-GE3

Si6562DQ Vishay Siliconix N- and P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel ID (A) 0.030 at VGS = 4.5 V ± 4.5 0.040 at VGS = 2.5 V ± 3.9 RoHS* 0.050 at VGS = - 4.5 V ± 3.5 COMPLIANT 0.085 at VGS = - 2.5 V ± 2.7 20 P-Channel - 20 • Halogen-free Option Available • TrenchFET® Power MOSFETS: 2.5 V Rated RDS(on) (Ω) Pb-free Available D1 S2 TSSOP-8 D1 1 S1 2 Si6562DQ 8 D2 7 S2 S1 3 6 S2 G1 4 5 G2 G2 G1 Top View Ordering Information: Si6562DQ-T1 Si6562DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 D2 N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 20 - 20 Gate-Source Voltage VGS ± 12 ± 12 ± 4.5 ± 3.5 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range ID ± 3.6 ± 2.7 IDM ± 30 ± 30 IS 1.25 - 1.25 PD 1.0 0.64 Unit V A W TJ, Tstg - 55 to 150 Symbol RthJA N- or P-Channel Unit 125 °C/W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 70720 S-81056-Rev. C, 12-May-08 www.vishay.com 1 Si6562DQ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage Gate-Body Leakage VGS(th) VDS = VGS, ID = 250 µA N-Ch 0.6 VDS = VGS, ID = - 250 µA P-Ch - 0.6 VDS = 0 V, VGS = ± 12 V IGSS VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea IDSS V N-Ch ± 100 P-Ch ± 100 N-Ch 1 VDS = - 20 V, VGS = 0 V P-Ch -1 VDS = 20 V, VGS = 0 V, TJ = 55 °C N-Ch 25 VDS = - 20 V, VGS = 0 V, TJ = 55 °C P-Ch - 25 VDS ≥ 5 V, VGS = 4.5 V N-Ch 30 VDS ≥ - 5 V, VGS = - 4.5 V P-Ch - 30 VGS = 4.5 V, ID = 4.5 A N-Ch 0.023 0.030 VGS = - 4.5 V, ID = - 3.5 A P-Ch 0.040 0.050 VGS = 2.5 V, ID = 3.9 A N-Ch 0.030 0.040 VGS = - 2.5 V, ID = - 2.7 A P-Ch 0.060 0.085 ID(on) RDS(on) gfs VSD nA µA A VDS = 10 V, ID = 4.5 A N-Ch 20 VDS = - 10 V, ID = - 3.5 A P-Ch 10 IS = 1.25 A, VGS = 0 V N-Ch 0.65 1.2 IS = - 1.25 A, VGS = 0 V P-Ch 0.72 - 1.2 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr N-Channel VDS = 15 V, VGS = 4.5 V, ID = 4.5 A P-Channel VDS = - 15 V, VGS = - 4.5 V, ID = - 3.5 A N-Channel VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω P-Channel VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 10 V, RG = 6 Ω N-Ch 13 25 P-Ch 14.5 25 N-Ch 3.0 P-Ch 3.5 N-Ch 3.3 P-Ch 3.5 nC N-Ch 22 50 P-Ch 27 50 N-Ch 40 80 P-Ch 30 60 N-Ch 50 100 P-Ch 57 100 N-Ch 20 40 P-Ch 21 40 IF = 1.25 A, dI/dt = 100 A/µs N-Ch 30 60 IF = - 1.25 A, dI/dt = 100 A/µs P-Ch 60 100 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 70720 S-81056-Rev. C, 12-May-08 Si6562DQ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 30 VGS = 5 thru 3 V 2.5 V 24 I D - Drain Current (A) I D - Drain Current (A) 24 18 12 2V 6 18 12 TC = 125 °C 6 25 °C 1.5 V - 55 °C 0 0 0 2 4 6 8 0 10 0.5 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.08 2100 Ciss 0.06 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1800 VGS = 2.5 V 0.04 VGS = 4.5 V 0.02 1500 1200 900 600 Coss 300 Crss 0 0 0 6 12 18 24 0 30 4 ID - Drain Current (A) 8 16 20 VDS - Drain-to-Source V oltage (V) On-Resistance vs. Drain Current Capacitance 1.8 4.5 1.6 2.7 1.8 0.9 VGS = 4.5 V ID = 4.5 A 1.4 (Normalized) VDS = 10 V ID = 4.5 A 3.6 R DS(on) - On-Resistance V GS - Gate-to-Source Voltage (V) 12 1.2 1.0 0.8 0.6 0 0 3 6 9 12 15 0.4 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (° C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 70720 S-81056-Rev. C, 12-May-08 150 www.vishay.com 3 Si6562DQ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 R DS(on) - On-Resistance (Ω) 0.10 I S - Source Current (A) 10 TJ = 150 °C TJ = 25 °C 0.08 ID = 4.5 A 0.06 0.04 0.02 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.4 40 32 0.0 24 Power (W) V GS(th) Variance (V) ID = 250 µA 0.2 - 0.2 16 8 - 0.4 - 0.6 - 50 - 25 0 25 50 75 100 125 0 150 0.01 0.1 1 10 30 Time (s) TJ - Temperature (° C) Threshold Voltage Single Pulse Power 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 125 ° C/W 0.02 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 30 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 70720 S-81056-Rev. C, 12-May-08 Si6562DQ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 20 3V VGS = 5, 4.5, 4, 3,5 V 16 I D - Drain Current (A) I D - Drain Current (A) 24 2.5 V 18 12 2V 6 12 8 TC = 125 °C 4 25 °C 1.5 V 0 0 2 4 6 8 10 0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.20 2500 0.16 2000 3.0 Ciss C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0 VGS = 2.5 V 0.12 VGS = 4.5 V 0.08 1500 1000 0.04 500 0 0 0 6 12 18 24 30 Coss Crss 0 4 ID - Drain Current (A) 8 12 16 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.8 4.5 VDS = 10 V ID = 3.5 A 1.6 2.7 1.8 VGS = 4.5 V ID = 3.5 A 1.4 (Normalized) 3.6 RDS(on) - On-Resistance V GS - Gate-to-Source Voltage (V) - 55 °C 1.2 1.0 0.8 0.9 0.6 0 0 3 6 9 Qg - Total Gate Charge (nC) Gate Charge Document Number: 70720 S-81056-Rev. C, 12-May-08 12 15 0.4 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 5 Si6562DQ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.20 10 RDS(on) - On-Resistance (Ω) I S - Source Current (A) 30 TJ = 150 °C TJ = 25 °C 0.16 0.12 0.08 ID = 4.5 A 0.04 1 0.00 0 0.25 0.50 0.75 1.00 1.25 1.50 0 VSD - Source-to-Drain Voltage (V) 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.8 40 ID = 250 µA 0.6 30 Power (W) V GS(th) Variance (V) 0.4 0.2 0.0 20 - 0.2 10 - 0.4 - 0.6 - 50 - 25 0 25 50 75 100 125 0 150 0.01 0.1 1 TJ - Temperature (° C) 10 30 Time (s) Single Pulse Power Threshold Voltage 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 125 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10- 4 10- 3 4. Surface Mounted 10- 2 10- 1 1 10 30 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70720. www.vishay.com 6 Document Number: 70720 S-81056-Rev. C, 12-May-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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