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SI6562DQ-T1-GE3

SI6562DQ-T1-GE3

  • 厂商:

    TFUNK(威世)

  • 封装:

    TSSOP8_3X4.4MM

  • 描述:

    MOSFET N/P-CH 20V 8-TSSOP

  • 数据手册
  • 价格&库存
SI6562DQ-T1-GE3 数据手册
Si6562DQ Vishay Siliconix N- and P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel ID (A) 0.030 at VGS = 4.5 V ± 4.5 0.040 at VGS = 2.5 V ± 3.9 RoHS* 0.050 at VGS = - 4.5 V ± 3.5 COMPLIANT 0.085 at VGS = - 2.5 V ± 2.7 20 P-Channel - 20 • Halogen-free Option Available • TrenchFET® Power MOSFETS: 2.5 V Rated RDS(on) (Ω) Pb-free Available D1 S2 TSSOP-8 D1 1 S1 2 Si6562DQ 8 D2 7 S2 S1 3 6 S2 G1 4 5 G2 G2 G1 Top View Ordering Information: Si6562DQ-T1 Si6562DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 D2 N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 20 - 20 Gate-Source Voltage VGS ± 12 ± 12 ± 4.5 ± 3.5 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range ID ± 3.6 ± 2.7 IDM ± 30 ± 30 IS 1.25 - 1.25 PD 1.0 0.64 Unit V A W TJ, Tstg - 55 to 150 Symbol RthJA N- or P-Channel Unit 125 °C/W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 70720 S-81056-Rev. C, 12-May-08 www.vishay.com 1 Si6562DQ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage Gate-Body Leakage VGS(th) VDS = VGS, ID = 250 µA N-Ch 0.6 VDS = VGS, ID = - 250 µA P-Ch - 0.6 VDS = 0 V, VGS = ± 12 V IGSS VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea IDSS V N-Ch ± 100 P-Ch ± 100 N-Ch 1 VDS = - 20 V, VGS = 0 V P-Ch -1 VDS = 20 V, VGS = 0 V, TJ = 55 °C N-Ch 25 VDS = - 20 V, VGS = 0 V, TJ = 55 °C P-Ch - 25 VDS ≥ 5 V, VGS = 4.5 V N-Ch 30 VDS ≥ - 5 V, VGS = - 4.5 V P-Ch - 30 VGS = 4.5 V, ID = 4.5 A N-Ch 0.023 0.030 VGS = - 4.5 V, ID = - 3.5 A P-Ch 0.040 0.050 VGS = 2.5 V, ID = 3.9 A N-Ch 0.030 0.040 VGS = - 2.5 V, ID = - 2.7 A P-Ch 0.060 0.085 ID(on) RDS(on) gfs VSD nA µA A VDS = 10 V, ID = 4.5 A N-Ch 20 VDS = - 10 V, ID = - 3.5 A P-Ch 10 IS = 1.25 A, VGS = 0 V N-Ch 0.65 1.2 IS = - 1.25 A, VGS = 0 V P-Ch 0.72 - 1.2 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr N-Channel VDS = 15 V, VGS = 4.5 V, ID = 4.5 A P-Channel VDS = - 15 V, VGS = - 4.5 V, ID = - 3.5 A N-Channel VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω P-Channel VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 10 V, RG = 6 Ω N-Ch 13 25 P-Ch 14.5 25 N-Ch 3.0 P-Ch 3.5 N-Ch 3.3 P-Ch 3.5 nC N-Ch 22 50 P-Ch 27 50 N-Ch 40 80 P-Ch 30 60 N-Ch 50 100 P-Ch 57 100 N-Ch 20 40 P-Ch 21 40 IF = 1.25 A, dI/dt = 100 A/µs N-Ch 30 60 IF = - 1.25 A, dI/dt = 100 A/µs P-Ch 60 100 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 70720 S-81056-Rev. C, 12-May-08 Si6562DQ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 30 VGS = 5 thru 3 V 2.5 V 24 I D - Drain Current (A) I D - Drain Current (A) 24 18 12 2V 6 18 12 TC = 125 °C 6 25 °C 1.5 V - 55 °C 0 0 0 2 4 6 8 0 10 0.5 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.08 2100 Ciss 0.06 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1800 VGS = 2.5 V 0.04 VGS = 4.5 V 0.02 1500 1200 900 600 Coss 300 Crss 0 0 0 6 12 18 24 0 30 4 ID - Drain Current (A) 8 16 20 VDS - Drain-to-Source V oltage (V) On-Resistance vs. Drain Current Capacitance 1.8 4.5 1.6 2.7 1.8 0.9 VGS = 4.5 V ID = 4.5 A 1.4 (Normalized) VDS = 10 V ID = 4.5 A 3.6 R DS(on) - On-Resistance V GS - Gate-to-Source Voltage (V) 12 1.2 1.0 0.8 0.6 0 0 3 6 9 12 15 0.4 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (° C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 70720 S-81056-Rev. C, 12-May-08 150 www.vishay.com 3 Si6562DQ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 R DS(on) - On-Resistance (Ω) 0.10 I S - Source Current (A) 10 TJ = 150 °C TJ = 25 °C 0.08 ID = 4.5 A 0.06 0.04 0.02 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.4 40 32 0.0 24 Power (W) V GS(th) Variance (V) ID = 250 µA 0.2 - 0.2 16 8 - 0.4 - 0.6 - 50 - 25 0 25 50 75 100 125 0 150 0.01 0.1 1 10 30 Time (s) TJ - Temperature (° C) Threshold Voltage Single Pulse Power 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 125 ° C/W 0.02 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 30 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 70720 S-81056-Rev. C, 12-May-08 Si6562DQ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 20 3V VGS = 5, 4.5, 4, 3,5 V 16 I D - Drain Current (A) I D - Drain Current (A) 24 2.5 V 18 12 2V 6 12 8 TC = 125 °C 4 25 °C 1.5 V 0 0 2 4 6 8 10 0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.20 2500 0.16 2000 3.0 Ciss C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0 VGS = 2.5 V 0.12 VGS = 4.5 V 0.08 1500 1000 0.04 500 0 0 0 6 12 18 24 30 Coss Crss 0 4 ID - Drain Current (A) 8 12 16 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.8 4.5 VDS = 10 V ID = 3.5 A 1.6 2.7 1.8 VGS = 4.5 V ID = 3.5 A 1.4 (Normalized) 3.6 RDS(on) - On-Resistance V GS - Gate-to-Source Voltage (V) - 55 °C 1.2 1.0 0.8 0.9 0.6 0 0 3 6 9 Qg - Total Gate Charge (nC) Gate Charge Document Number: 70720 S-81056-Rev. C, 12-May-08 12 15 0.4 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 5 Si6562DQ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.20 10 RDS(on) - On-Resistance (Ω) I S - Source Current (A) 30 TJ = 150 °C TJ = 25 °C 0.16 0.12 0.08 ID = 4.5 A 0.04 1 0.00 0 0.25 0.50 0.75 1.00 1.25 1.50 0 VSD - Source-to-Drain Voltage (V) 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.8 40 ID = 250 µA 0.6 30 Power (W) V GS(th) Variance (V) 0.4 0.2 0.0 20 - 0.2 10 - 0.4 - 0.6 - 50 - 25 0 25 50 75 100 125 0 150 0.01 0.1 1 TJ - Temperature (° C) 10 30 Time (s) Single Pulse Power Threshold Voltage 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 125 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10- 4 10- 3 4. Surface Mounted 10- 2 10- 1 1 10 30 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70720. www.vishay.com 6 Document Number: 70720 S-81056-Rev. C, 12-May-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000
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