SI6928DQ-T1-E3

Si6928DQ Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V ± 4.0 0.050 at VGS = 4.5 V ± 3.4 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT D1 D2 TSSOP-8 8 D2 7 S2 3 6 S2 4 5 G2 D1 1 S1 2 S1 G1 Si6928DQ G1 G2 Top View Ordering Information: Si6928DQ-T1 Si6928DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source Current (Diode Conduction)a TA = 25 °C Maximum Power Dissipationa TA = 70 °C Operating Junction and Storage Temperature Range ID V ± 4.0 ± 3.2 IDM ± 20 IS 1.25 PD Unit 1.0 0.64 A W TJ, Tstg - 55 to 150 Symbol Limit Unit RthJA 125 °C/W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 70663 S-81056-Rev. D, 12-May-08 www.vishay.com 1 Si6928DQ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. VGS(th) VDS = VGS, ID = 250 µA 1.0 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 5 Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage a VDS ≥ 5 V, VGS = 10 V V 20 µA A VGS = 10 V, ID = 4.0 A 0.027 0.035 VGS = 4.5 V, ID = 3.4 A 0.038 0.050 gfs VDS = 15 V, ID = 4.0 A 13 VSD IS = 1.25 A, VGS = 0 V 0.73 VDS = 15 V, VGS = 5 V, ID = 4.0 A RDS(on) nA Ω S 1.2 V Dynamicb Gate Charge Qg Total Gate Charge Qgt Gate-Source Charge Qgs VDS = 15 V, VGS = 10 V, ID = 4.0 A 9 14 17.5 30 4.0 Gate-Drain Charge Qgd 2.5 Turn-On Delay Time td(on) 12 Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr VDD = 15 V, RL = 6 Ω ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω IF = 1.25 A, dI/dt = 100 A/µs nC 20 9 20 25 50 20 40 25 60 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 70663 S-81056-Rev. D, 12-May-08 Si6928DQ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 20 VGS = 10 thru 5 V 4V 16 I D - Drain Current (A) I D - Drain Current (A) 16 12 8 4 12 8 TC = 125 °C 4 25 °C 3V - 55 °C 0 0 0 2 4 6 8 10 0 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.06 5 1500 Ciss 0.05 1200 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1 VGS = 4.5 V 0.04 0.03 VGS = 10 V 0.02 900 600 Coss 300 0.01 Crss 0 0 0 4 8 12 16 20 0 6 ID - Drain Current (A) 12 24 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 1.8 VDS = 15 V ID = 4.0 A 8 1.6 RDS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 18 6 4 VGS = 10 V ID = 4.0 A 1.4 1.2 1.0 0.8 2 0.6 0 0 4 8 12 Qg - Total Gate Charge (nC) Gate Charge Document Number: 70663 S-81056-Rev. D, 12-May-08 16 20 0.4 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si6928DQ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.12 RDS(on) - On-Resistance (Ω) I S - Source Current (A) 20 10 TJ = 150 °C TJ = 25 °C 0.09 ID = 4.0 A 0.06 0.03 0 0 0 0.2 0.4 0.6 0.8 1.0 1 1.2 3 5 7 9 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 40 0.6 32 0.3 Power (W) V GS(th) Variance (V) ID = 250 µA 0.0 - 0.3 24 16 8 - 0.6 - 0.9 - 50 0 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 30 Time (s) TJ - Temperature (°C) Single Pulse Power Threshold Voltage 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: PDM 0.1 0.1 t1 t2 1. Duty Cycle, D = 0.05 t1 t2 2. Per Unit Base = R thJA = 125 °C/W 0.02 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 30 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70663. www.vishay.com 4 Document Number: 70663 S-81056-Rev. D, 12-May-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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