SI6969DQ-T1-GE3

Si6969DQ Vishay Siliconix Dual P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.034 at VGS = - 4.5 V ± 4.6 0.050 at VGS = - 2.5 V ± 3.8 0.075 at VGS = - 1.8 V ± 3.0 • Halogen-free • TrenchFET® Power MOSFETs: 1.8 V Rated RoHS COMPLIANT S1 S2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 Si6969DQ 8 D2 7 S2 G1 G2 6 S2 5 G2 Top View Ordering Information: Si6969DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 D2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 12 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b TA = 25 °C TA = 70 °C V ± 4.6 ID ± 3.8 IDM ± 30 IS - 1.25 A 1.1 PD W 0.72 TJ, Tstg Operating Junction and Storage Temperature Range Unit - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Symbol t ≤ 10 s Steady State RthJA Typical Maximum 110 115 Unit °C/W Notes: a. Surface Mounted on FR4 board. b. t ≤ 10 s. Document Number: 70828 S-81221-Rev. B, 02-Jun-08 www.vishay.com 1 Si6969DQ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VGS(th) VDS = VGS, ID = - 250 µA - 0.45 Typ. Max. Unit Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea V VDS = 0 V, VGS = ± 8 V ± 100 VDS = - 9.6 V, VGS = 0 V -1 VDS = - 9.6 V, VGS = 0 V, TJ = 70 °C - 25 VDS ≥ - 8 V, VGS = - 4.5 V RDS(on) - 30 nA µA A VGS = - 4.5 V, ID = - 4.6 A 0.027 0.034 VGS = - 2.5 V, ID = - 3.8 A 0.037 0.050 VGS = - 1.8 V, ID = - 3.0 A 0.053 0.075 gfs VDS = - 8 V, ID = - 4.6 A 18 VSD IS = - 1.25 A, VGS = 0 V - 0.68 - 1.1 21 40 VDS = - 6 V, VGS = - 4.5 V, ID = - 4.6 A 4.5 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 3.5 Turn-On Delay Time td(on) 25 Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr VDD = - 6 V, RL = 6 Ω ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω IF = - 1.25 A, dI/dt = 100 A/µs nC 50 35 60 80 150 40 80 50 100 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 70828 S-81221-Rev. B, 02-Jun-08 Si6969DQ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 30 TC = - 55 °C VGS = 5 thru 2.5 V 25 °C 24 18 I D - Drain Current (A) ID - Drain Current (A) 24 2V 12 1.5 V 6 125 °C 18 12 6 1V 0 0 2 4 6 8 10 0 0.0 12 0.5 VDS - Drain-to-Source Voltage (V) 1.0 1.5 2.0 2.5 3.0 10 12 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.10 4000 3200 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) VGS = 1.8 V 0.08 0.06 VGS = 2.5 V 0.04 VGS = 4.5 V 2400 1600 0.02 800 0.00 0 0 6 12 18 24 Ciss 30 Coss Crss 0 2 ID - Drain Current (A) 4 8 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.4 4.5 VGS = 4.5 V ID = 4.6 A VDS = 6 V ID = 4.6 A 3.6 R DS(on) - On-Resistance (Normalized) VGS - Gat e-to-Source Voltage (V) 6 2.7 1.8 1.2 1.0 0.8 0.9 0.0 0 3 6 9 12 15 Qg - Total Gate Charge (nC) Gate Charge Document Number: 70828 S-81221-Rev. B, 02-Jun-08 18 21 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si6969DQ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.08 30 R DS(on) - On-Resistance (W) 0.07 I S - Source Current (A) TJ = 150 °C 10 TJ = 25 °C 0.06 0.05 ID = 4.6 A 0.04 0.03 0.02 0.01 0.00 1 0.00 0.2 0.4 0.6 0.8 1..0 1.2 0 1.4 2 VSD - Source-to-Drain Voltage (V) 6 8 On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.5 30 ID = 250 µA 0.4 25 0.3 20 Power (W) V GS(th) Variance (V) 4 VGS - Gate-to-Source Voltage (V) 0.2 0.1 15 10 0.0 5 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.1 10 1 Time (s) TJ - Temperature (°C) 30 Single Pulse Power Threshold Voltage 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 115 °C/W 0.02 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70828. www.vishay.com 4 Document Number: 70828 S-81221-Rev. B, 02-Jun-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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