Si7113ADN
www.vishay.com
Vishay Siliconix
P-Channel 100 V (D-S) MOSFET
FEATURES
PowerPAK® 1212-8 Single
• TrenchFET® power MOSFET
D
D 8
D 7
D 6
5
3.
3
m
m
1
3.3
mm
Top View
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
1
2 S
3 S
4 S
G
Bottom View
• LED Lighting
PRODUCT SUMMARY
VDS (V)
RDS(on) max. (Ω) at VGS = -10 V
RDS(on) max. (Ω) at VGS = -4.5 V
Qg typ. (nC)
ID (A) g
Configuration
S
• Active clamp in intermediate DC/DC
power supplies
G
• Load switch
-100
0.132
0.186
5.65
10.8
Single
D
P-Channel MOSFET
ORDERING INFORMATION
Package
PowerPAK 1212-8
Lead (Pb)-free and halogen-free
Si7113ADN-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C)
SYMBOL
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed drain current (t = 100 μs)
LIMIT
-100
± 20
-10.8
-8.6
-3.8 b, c
-3.1 b, c
-20
-16 a
-2.9 b, c
-15
11.25
27.8
17.8
3.5 b, c
2.2 b, c
-55 to +150
260
ID
IDM
Continuous source-drain diode current
TC = 25 °C
TA = 25 °C
IS
Single pulse avalanche current
Single pulse avalanche energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
TC = 70 °C
Maximum power dissipation
TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d, e
PD
TJ, Tstg
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
Maximum junction-to-ambient b, f
t ≤ 10 s
RthJA
29
36
Maximum junction-to-case (drain)
Steady state
RthJC
3.6
4.6
UNIT
°C/W
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 81 °C/W
g. TC = 25 °C
S17-0741-Rev. A, 15-May-17
Document Number: 77678
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si7113ADN
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = -250 μA
-100
-
-
V
-
-63
-
-
4.2
-
Static
Drain-source breakdown voltage
VDS temperature coefficient
ΔVDS/TJ
VGS(th) temperature coefficient
ΔVGS(th)/TJ
Gate-source threshold voltage
ID = -250 μA
mV/°C
VGS(th)
VDS = VGS, ID =-250 μA
-1.1
-
-2.6
V
Gate-source leakage
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 100
nA
Zero gate voltage drain current
IDSS
On-state drain current a
ID(on)
Drain-source on-state resistance a
Forward transconductance a
RDS(on)
gfs
VDS = -100 V, VGS = 0 V
-
-
-1
VDS = -100 V, VGS = 0 V, TJ = 70 °C
-
-
-10
VDS ≥ -10 V, VGS = -10 V
-15
-
-
VGS = -10 V, ID = -3.8 A
-
0.110
0.132
VGS = -4.5 V, ID = -3.2 A
-
0.155
0.186
VDS = -10 V, ID = -3.8 A
-
8
-
-
515
-
VDS = -50 V, VGS = 0 V, f = 1 MHz
-
162
-
-
10
-
-
10.9
16.5
μA
A
Ω
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Gate resistance
Rg
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDS = -50 V, VGS = -10 V, ID = -3.8 A
-
5.65
8.5
VDS = -50 V, VGS = -4.5 V, ID = -3.8 A
-
1.7
-
-
2.5
-
f = 1 MHz
1.96
9.8
19.6
-
10
20
-
22
40
-
20
40
tf
-
20
40
td(on)
-
35
55
-
40
60
-
22
40
-
1622
40
td(on)
tr
td(off)
tr
td(off)
VDD = -50 V, RL = 16.1 Ω, ID ≅ -3.1 A,
VGEN = -10 V, Rg = 1 Ω
VDD = -50 V, RL = 16.1 Ω, ID ≅ -3.1 A,
VGEN = -4.5 V, Rg = 1 Ω
tf
pF
nC
Ω
ns
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulse diode forward current
ISM
Body diode voltage
VSD
TC = 25 °C
IS = -3.1 A, VGS = 0 V
-
-
-16
-
-
-15
-
-0.8
-1.2
A
V
Body diode reverse recovery time
trr
-
43
65
ns
Body diode reverse recovery charge
Qrr
-
80
120
nC
Reverse recovery fall time
ta
-
36
-
Reverse recovery rise time
tb
-
7
-
IF = -3.1 A, di/dt = 100 A/μs, TJ = 25 °C
ns
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-0741-Rev. A, 15-May-17
Document Number: 77678
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si7113ADN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
15
10000
VGS = 10 V thru 6 V
1000
10
VGS = 4 V
100
5
2nd line
ID - Drain Current (A)
12
15
1st line
2nd line
2nd line
ID - Drain Current (A)
VGS = 6 V
10000
TC = 125 °C
1000
9
1st line
2nd line
20
6
TC = 25 °C
100
TC = -55 °C
3
VGS = 3 V
0
10
1
2
3
4
0
10
0
5
1
2
3
VGS - Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
VGS = 10 V
100
0.1
600
Ciss
400
100
200
Coss
Crss
0.05
0
10
3
6
9
12
10
0
15
20
40
60
80
ID - Drain Current (A)
2nd line
VDS - Drain-to-Source Voltage (V)
2nd line
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
Axis Title
1.9
VDS = 50 V
8
1000
1st line
2nd line
VDS = 25 V
VDS = 80 V
4
100
2
0
10
0
3
6
9
12
2nd line
RDS(on) - On-Resistance (Normalized)
10000
6
100
Axis Title
10
ID = 3.8 A
1000
1st line
2nd line
0.15
2nd line
C - Capacitance (pF)
1000
VGS = 4.5 V
10000
800
0.2
0
6
Axis Title
10000
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
5
VDS - Drain-to-Source Voltage (V)
2nd line
0.25
2nd line
VGS - Gate-to-Source Voltage (V)
4
10000
VGS = 10 V, ID = 3.8 A
1.6
1000
VGS = 4.5 V,
ID = 3.2 A
1.3
1.0
100
0.7
0.4
10
-50
-25
0
25
50
75
100 125 150
Qg - Total Gate Charge (nC)
2nd line
TJ - Junction Temperature (°C)
2nd line
Gate Charge
On-Resistance vs. Junction Temperature
S17-0741-Rev. A, 15-May-17
1st line
2nd line
0
Document Number: 77678
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si7113ADN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
100
10000
0.35
10000
1
1st line
2nd line
2nd line
IS - Source Current (A)
1000
TJ = 150 °C
TJ = 25 °C
0.1
100
0.01
0.001
0.25
0.15
TJ = 25 °C
0.2
0.4
0.6
0.8
1.0
100
0.1
0.05
0
10
0
1000
TJ = 150 °C
0.2
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
0.3
10
1.2
10
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
2.3
120
10000
ID = 250 μA
96
Power (W)
1000
1.9
1st line
2nd line
2nd line
VGS(th) (V)
2.1
1.7
72
48
100
24
1.5
1.3
0
0.001
10
-50
-25
0
25
50
75
100 125 150
0.01
TJ - Temperature (°C)
2nd line
Threshold Voltage
0.1
Time (s)
1
10
Single Pulse Power, Junction-to-Ambient
Axis Title
100
10000
IDM limited
100 μs
1000
1 ms
1
1st line
2nd line
2nd line
ID - Drain Current (A)
10
10 ms
Limited by RDS(on)
0.1
100 ms
(1)
100
10 s, 1 s
DC
0.01
TA = 25 °C
Single pulse
BVDSS limited
0.001
0.1
(1)
1
10
100
10
1000
VDS - Drain-to-Source Voltage (V)
VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S17-0741-Rev. A, 15-May-17
Document Number: 77678
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si7113ADN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
10000
12
2nd line
ID - Drain Current (A)
9
1st line
2nd line
1000
6
100
3
0
10
0
25
50
75
100
125
150
TC - Case Temperature (°C)
2nd line
35
2.0
28
1.6
Power (W)
Power (W)
Current Derating a
21
14
7
0
0
1.2
0.8
0.4
25
50
75
100
125
TC - Case Temperature (°C)
Power, Junction-to-Case
150
0.0
0
25
50
75
100
125
150
TA - Case Temperature (°C)
Power, Junction-to-Ambient
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S17-0741-Rev. A, 15-May-17
Document Number: 77678
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si7113ADN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized EffectiveT ransient
Thermal Impedance
1
Duty cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
0.02
t2
1. Duty cycle, D =
Single pulse
3. T JM - TA = PDMZthJA(t)
t1
t2
2. Per unit base = R thJA = 81 °C/W
4. Surface mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration( s)
100
10
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
NormalizedEffectiveTransient
ThermalImpedance
Duty cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Single pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?77678.
S17-0741-Rev. A, 15-May-17
Document Number: 77678
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
D4
PowerPAK® 1212-8, (Single / Dual)
W
H
E2
E4
L
K
M
θ
e
1
Z
D5
D
D2
2
2
D1
8
1
5
4
θ
4
b
3
L1
E3
A1
Backside view of single pad
H
2
E1
E
Detail Z
L
K
E2
E4
D2 D3(2x) D4
c
A
H
1
D1
2
K1
Notes
1. Inch will govern
2 Dimensions exclusive of mold gate burrs
3. Dimensions exclusive of mold flash and cutting burrs
D2
3
4
b
θ
D5
θ
E3
Backside view of dual pad
DIM.
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.97
1.04
1.12
0.038
0.041
0.044
A1
0.00
-
0.05
0.000
-
0.002
b
0.23
0.30
0.41
0.009
0.012
0.016
c
0.23
0.28
0.33
0.009
0.011
0.013
D
3.20
3.30
3.40
0.126
0.130
0.134
D1
2.95
3.05
3.15
0.116
0.120
0.124
D2
1.98
2.11
2.24
0.078
0.083
0.088
D3
0.48
-
0.89
0.019
-
0.035
D4
0.47 typ.
D5
2.3 typ.
0.0185 typ
0.090 typ
E
3.20
3.30
3.40
0.126
0.130
0.134
E1
2.95
3.05
3.15
0.116
0.120
0.124
E2
1.47
1.60
1.73
0.058
0.063
0.068
E3
1.75
1.85
1.98
0.069
0.073
0.078
E4
0.034 typ.
0.013 typ.
e
0.65 BSC
0.026 BSC
K
0.86 typ.
K1
0.35
-
0.034 typ.
-
0.014
-
-
H
0.30
0.41
0.51
0.012
0.016
0.020
L
0.30
0.43
0.56
0.012
0.017
0.022
L1
0.06
0.13
0.20
0.002
0.005
0.008
0°
-
12°
0°
-
12°
W
0.15
0.25
0.36
0.006
0.010
0.014
M
0.125 typ.
0.005 typ.
ECN: S16-2667-Rev. M, 09-Jan-17
DWG: 5882
Revison: 09-Jan-17
Document Number: 71656
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single
0.152
(3.860)
0.039
0.068
(0.990)
(1.725)
0.010
(0.255)
(2.390)
0.094
0.088
(2.235)
0.016
(0.405)
0.026
(0.660)
0.025
0.030
(0.635)
(0.760)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72597
Revision: 21-Jan-08
www.vishay.com
7
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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Revision: 01-Jan-2022
1
Document Number: 91000
