SI7138DP-T1-E3

Si7138DP Vishay Siliconix N-Channel 60 V (D-S) Reduced Qgd, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A)a 0.0078 at VGS = 10 V 30 0.009 at VGS = 6 V 30 Qg (Typ.) 55 PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • Low Thermal Resistance PowerPAK® Package • 100 % Rg and Avalanche Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS S 6.15 mm • Primary Side Switch - Very Low Rg and Qgd, Critical for Minimizing Losses 5.15 mm 1 S 2 S 3 D G 4 D 8 D 7 D 6 D G 5 Bottom View S N-Channel MOSFET Ordering rdering Information: Si7138DP-T1-E3 (Lead (Pb)-free) Si7138DP-T1-GE3 (Lead (Pb)-free) and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Drain Current (TJ = 150 °C) ID Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD TJ, Tstg Operating Junction and Storage Temperature Range d, e Unit V 19.7b, c 15.7b, c 80 IDM Pulsed Drain Current Soldering Recommendations (Peak Temperature) Limit 60 ± 20 30 30 30a 4.5b, c 43 93 96 61.5 A mJ 5.4b, c 3.5b, c - 55 to 150 260 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Symbol RthJA RthJC Typical 18 1.0 Maximum 23 1.5 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1” x 1” FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/ppg?73461). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 65 °C/W. Document Number: 73530 S11-0212-Rev. C, 14-Feb-11 www.vishay.com 1 Si7138DP Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 1 mA 60 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ V 60.5 ID = 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V, TJ = 55 °C 10 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea VDS ≥ 5 V, VGS = 10 V RDS(on) Forward Transconductancea gfs - 8.4 2 4 30 nA µA A VGS = 10 V, ID = 19.7 A 0.0065 0.0078 VGS = 6 V, ID = 18 A 0.0073 0.009 VDS = 15 V, ID = 19.7 A 84 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 6900 VDS = 30 V, VGS = 0 V, f = 1 MHz 200 VDS = 30 V, VGS = 10 V, ID = 19.7 A Turn-On Delay Time td(off) Fall Time Turn-On Delay Time f = 1 MHz 0.6 47 70 VDD = 30 V, RL = 3 Ω ID ≅ 10 A, VGEN = 6 V, Rg = 1 Ω 120 180 40 60 8 15 25 40 12 20 VDD = 30 V, RL = 3 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω tf Fall Time 0.9 tf td(off) Turn-Off Delay Time 83 27.5 td(on) tr Rise Time 135 55 nC 11 tr Turn-Off Delay Time 90 VDS = 30 V, VGS = 6 V, ID = 19.7 A td(on) Rise Time pF 470 50 75 8 15 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage TC = 25 °C IS 30 ISM 80 IS = 2.7 A VSD 0.8 1.2 A V Body Diode Reverse Recovery Time trr 45 70 ns Body Diode Reverse Recovery Charge Qrr 80 120 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 30 15 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73530 S11-0212-Rev. C, 14-Feb-11 Si7138DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 80 6V 10 V thru 7 V 5V 70 I D - Drain Current (A) ID - Drain Current (A) 16 60 50 40 30 25 °C 12 TC = 125 °C 8 20 4 4V 3V 10 - 55 °C 0 0.0 0 0.3 0.6 0.9 1.2 0 1.5 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 5 8000 0.0080 Ciss 0.0076 C - Capacitance (pF) VGS = 6 V RDS(on) 0.0072 0.0068 VGS = 10 V 6000 4000 2000 0.0064 Coss Crss 0 0.0060 0 20 40 60 80 0 10 ID - Drain Current (A) 20 40 50 60 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.8 10 ID = 19.7 A ID = 19.7 A 1.6 8 VDS = 30 V RDS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 30 6 VDS = 48 V 4 2 1.4 VGS = 10,6 V 1.2 1.0 0.8 0 0 20 40 60 Qg - Total Gate Charge (nC) Gate Charge Document Number: 73530 S11-0212-Rev. C, 14-Feb-11 80 100 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si7138DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.020 TJ = 150 °C RDS(on) - Drain-to-Source On-Resistance (Ω) I S - Source Current (A) 100 TJ = 25 °C 10 ID = 19.7 A 0.015 TJ = 125 °C 0.010 TJ = 25 °C 0.005 4 1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 5 6 7 8 9 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 3.7 100 ID = 250 µA 80 Power (W) VGS(th) (V) 3.2 2.7 2.2 60 40 1.7 1.2 - 50 20 - 25 0 25 50 75 100 125 0 0.001 150 0.01 Threshold Voltage 1 10 100 1000 Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* IDM limited 100 µs ID(on) limited 10 I D - Drain Current (A) 0.1 Time (s) TJ - Temperature (°C) 1 ms 10 ms 1 100 ms 1s 0.1 10 s TA = 25 °C Single Pulse 0.01 0.1 1 BVDSS limited DC 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73530 S11-0212-Rev. C, 14-Feb-11 Si7138DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 ID - Drain Current (A) 80 60 40 Limited by Package 20 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 100 100 80 Peak Avalanche Current (A) Power (W) 80 60 40 20 TA = L x ID BV - V DD 10 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating (Junction-to-Case) 150 0.000001 0.00001 0.0001 0.001 Time (s) Maximum Single Pulse Avalanche Capability * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73530 S11-0212-Rev. C, 14-Feb-11 www.vishay.com 5 Si7138DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.5 0.2 0.1 0.1 0.05 Single Pulse 0.02 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73530. www.vishay.com 6 Document Number: 73530 S11-0212-Rev. 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