Si7156DP
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)a
0.0035 at VGS = 10 V
50
0.0047 at VGS = 4.5 V
50
VDS (V)
40
Qg (Typ.)
45 nC
PowerPAK® SO-8
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % Avalanche Tested
APPLICATIONS
S
6.15 mm
• Synchronous Rectification
• Secondary Side DC/DC
5.15 mm
1
S
2
D
S
3
G
4
D
8
D
7
D
6
G
D
5
Bottom View
S
Ordering Information: Si7156DP-T1-E3 (Lead (Pb)-free)
Si7156DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
ID
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
TC = 25 °C
TA = 25 °C
IS
L = 0.1 mH
IAS
EAS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
Temperature)d, e
Unit
V
50a
50a
29b, c
23b, c
70
IDM
Pulsed Drain Current
Soldering Recommendations (Peak
Limit
40
± 20
A
50a
4.9b, c
40
80
83
53
mJ
5.4b, c
3.4b, c
- 55 to 150
260
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambientb, f
t ≤ 10 s
Steady State
Symbol
RthJA
RthJC
Typical
18
1.0
Maximum
23
1.5
Unit
Maximum
°C/W
Maximum Junction-to-Case (Drain)
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 65 °C/W.
Document Number: 69639
S09-0222-Rev. B, 09-Feb-09
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1
Si7156DP
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
40
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
V
45
ID = 250 µA
mV/°C
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
3.0
V
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
VDS = 40 V, VGS = 0 V
1
VDS = 40 V, VGS = 0 V, TJ = 55 °C
10
Gate-Source Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
VDS ≥ 5 V, VGS = 10 V
RDS(on)
Forward Transconductancea
gfs
- 6.5
1.0
30
µA
A
VGS = 10 V, ID = 20 A
0.0028
0.0035
VGS = 4.5 V, ID = 15 A
0.0038
0.0047
VDS = 15 V, ID = 20 A
85
Ω
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
103
155
45
70
19
VDD = 20 V, RL = 2 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
0.6
1.2
22
40
10
20
45
80
tf
9
18
td(on)
55
90
32
60
56
100
25
50
VDD = 20 V, RL = 2 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
tr
td(off)
Fall Time
nC
12.3
f = 1 MHz
td(off)
Rise Time
Turn-Off Delay Time
VDS = 20 V, VGS = 4.5 V, ID = 20 A
tr
Fall Time
Turn-On Delay Time
pF
605
310
VDS = 20 V, VGS = 10 V, ID = 20 A
td(on)
Rise Time
Turn-Off Delay Time
6900
VDS = 20 V, VGS = 0 V, f = 1 MHz
tf
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
TC = 25 °C
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
40
A
70
IS = 5 A
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
0.75
1.1
V
40
70
ns
52
100
nC
23
17
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 69639
S09-0222-Rev. B, 09-Feb-09
Si7156DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
70
2.0
VGS = 10 V thru 4 V
1.6
I D - Drain Current (A)
I D - Drain Current (A)
56
42
28
14
1.2
TC = 25 °C
0.8
0.4
TC = 125 °C
3V
0
TC = - 55 °C
0
0
0.5
1.0
1.5
2.0
2.5
0
1
VDS - Drain-to-Source Voltage (V)
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.0050
9000
0.0045
7200
VGS = 4.5 V
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
Ciss
0.0040
0.0035
5400
3600
VGS = 10 V
0.0030
1800
0.0025
Crss
0
0
14
28
42
56
70
0
2
4
6
8
10
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
12
1.8
10
ID = 20 A
ID = 20 A
VDS = 10 V
VGS = 10 V
8
VDS = 20 V
6
VDS = 30 V
4
1.5
(Normalized)
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
Coss
1.2
VGS = 4.5 V
0.9
2
0
0
22
44
66
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 69639
S09-0222-Rev. B, 09-Feb-09
88
110
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si7156DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.030
100
ID = 20 A
TJ = 150 °C
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
10
TJ = 25 °C
1
0.1
0.01
0.024
0.018
0.012
TA = 125 °C
0.006
TA = 25 °C
0
0.001
0
0.2
0.4
0.6
0.8
1.0
0
1.2
2
VSD - Source-to-Drain Voltage (V)
6
8
10
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.6
200
0.3
160
0
Power (W)
VGS(th) Variance (V)
4
ID = 5 mA
- 0.3
- 0.6
80
ID = 250 µA
40
- 0.9
- 1.2
- 50
120
0
- 25
0
25
50
75
100
125
150
0.001
0.01
TJ - Temperature (°C)
0.1
1
10
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by R DS(on)*
I D - Drain Current (A)
10
1 ms
10 ms
1
100 ms
1s
10 s
0.1
DC
TA = 25 °C
Single Pulse
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which R DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 69639
S09-0222-Rev. B, 09-Feb-09
Si7156DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
155
I D - Drain Current (A)
124
93
62
Package Limited
31
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
100
2.5
80
2.0
60
1.5
Power (W)
Power (W)
Current Derating*
40
1.0
0.5
20
0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (A)
Power, Junction-to-Case
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69639
S09-0222-Rev. B, 09-Feb-09
www.vishay.com
5
Si7156DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 65 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
100
10
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69639.
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Document Number: 69639
S09-0222-Rev. B, 09-Feb-09
Legal Disclaimer Notice
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Vishay
Disclaimer
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Revision: 01-Jan-2022
1
Document Number: 91000
