SI7159DP-T1-GE3

New Product Si7159DP Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.007 at VGS = - 10 V - 30d 0.0105 at VGS = - 4.5 V - 30d • • • • Qg (Typ.) 63 nC PowerPAK SO-8 COMPLIANT • Notebook Battery Charging • Notebook Adapter Switch • Load Switch 5.15 mm 1 RoHS APPLICATIONS S 6.15 mm Halogen-free TrenchFET® Power MOSFET 100% Rg Tested 100% UIS Tested S 2 S S 3 G G 4 D 8 D 7 D 6 D 5 D Bottom View Ordering Information: Si7159DP-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Limit - 30 ± 25 - 30d - 20.7a, b - 16.4a, b - 60 - 30d ID Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD - 4.5a, b - 20 20 83 53 5.4a, b 3.4a, b - 55 to 150 260 TJ, Tstg Operating Junction and Storage Temperature Range V 30d IDM Pulsed Drain Current Unit Soldering Recommendations (Peak Temperature)e, f A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Case t ≤ 10 s Steady State Symbol RthJA RthJC Typical 18 1.0 Maximum 33 1.5 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 65 °C/W. d. Package limited. e. See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 68872 S-82122-Rev. A, 08-Sep-08 www.vishay.com 1 New Product Si7159DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = - 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 25 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time tr mV/°C 5.4 - 1.0 - 2.5 V ± 100 nA VDS = - 30 V, VGS = 0 V -1 VDS = - 30 V, VGS = 0 V, TJ = 55 °C -5 VDS ≥ - 10 V, VGS = - 10 V VGS = - 10 V, ID = - 15 A - 30 0.007 VGS = - 4.5 V, ID = - 10 A 0.0085 0.0105 VDS = - 10 V, ID = - 15 A 45 5170 VDS = - 15 V, VGS = 0 V, f = 1 MHz 930 pF 890 VDS = - 15 V, VGS = - 10 V, ID = - 10 A VDS = - 15 V, VGS = - 4.5 V, ID = - 10 A 118 180 63 95 14.3 nC 29.8 f = 1 MHz VDD = - 15 V, RL = 1.5 Ω ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω 0.4 2.1 4.2 16 30 15 30 72 140 tf 17 30 73 140 132 200 65 100 40 70 tr Ω S td(on) td(off) µA A 0.0058 td(on) td(off) V - 32 VDD = - 15 V, RL = 1.5 Ω ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω tf Ω ns Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C - 30 - 60 IS = - 3 A, VGS = 0 V IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.72 - 1.2 V 54 100 ns 50 100 nC 24 30 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 68872 S-82122-Rev. A, 08-Sep-08 New Product Si7159DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 60 VGS = 10 thru 4 V 8 I D - Drain Current (A) I D - Drain Current (A) 48 36 24 VGS = 3 V 6 4 TC = 25 °C 2 12 TC = 125 °C TC = - 55 °C VGS = 1 V, 2 V 0 0.0 0 0.5 1.0 1.5 2.0 0 2.5 1 VDS - Drain-to-Source Voltage (V) 3 4 5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.010 7500 0.009 0.008 0.007 4500 3000 Coss VGS = 10 V 0.006 Ciss 6000 VGS = 4.5 V C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 2 1500 Crss 0.005 0 0 10 20 30 40 50 60 0 5 ID - Drain Current (A) 10 20 25 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.6 10 ID = 10 A VGS = - 10 V ID = - 15 A 1.4 VDS = 15 V 6 VDS = 10 V VDS = 20 V 4 (Normalized) 8 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 15 1.2 VGS = - 4.5 V 1.0 0.8 2 0 0 25 50 75 Qg - Total Gate Charge (nC) Gate Charge Document Number: 68872 S-82122-Rev. A, 08-Sep-08 100 125 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si7159DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.030 10 0.024 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = - 15 A TJ = 150 °C TJ = 25 °C 1 0.1 0.01 0.018 0.012 TJ = 125 °C 0.006 TJ = 25 °C 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.6 200 0.3 160 Power (W) VGS(th) Variance (V) 0.001 0.0 0.0 ID = 5 mA - 0.3 10 120 80 ID = 250 µA - 0.6 - 0.9 - 50 40 0 - 25 0 25 50 75 100 125 150 0.001 0.01 TJ - Temperature (°C) 0.1 1 10 Time (s) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by RDS(on)* I D - Drain Current (A) 1 ms 10 10 ms 100 ms 1 1s 10 s 0.1 TA = 25 °C Single Pulse 0.01 0.01 0.1 DC BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 68872 S-82122-Rev. A, 08-Sep-08 New Product Si7159DP Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 90 I D - Drain Current (A) 72 54 36 Package Limited 18 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 100 2.5 80 2.0 60 1.5 Power (W) Power (W) Current Derating* 40 20 1.0 0.5 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power Derating, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68872 S-82122-Rev. A, 08-Sep-08 www.vishay.com 5 New Product Si7159DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 65 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68872. www.vishay.com 6 Document Number: 68872 S-82122-Rev. A, 08-Sep-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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