SI7222DN-T1-E3

Si7222DN Vishay Siliconix Dual N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.042 at VGS = 10 V 6e 0.047 at VGS = 4.5 V 5e Qg (Typ.) 8 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm Profile APPLICATIONS • Primary Side Switch • Synchronus Rectification PowerPAK 1212-8 D1 S1 3.30 mm D2 3.30 mm 1 G1 2 S2 3 G2 4 D1 G1 8 G2 D1 7 D2 6 D2 Bottom View 5 Ordering Information: Si7222DN-T1-E3 (Lead (Pb)-free) Si7222DN-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ± 12 TC = 70 °C TA = 25 °C ID IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C Avalanche Current L = 0.1 mH Single-Pulse Avalanche Energy IS IAS EAS TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C Soldering Recommendations (Peak Temperature)c, d 5.7a, b A 24 6e 2.0a, b 13 8.5 mJ 17.8 PD 11.4 2.5a, b W 1.6a, b TA = 70 °C Operating Junction and Storage Temperature Range 5e 4.3a, b TA = 70 °C Pulsed Drain Current V 6e TC = 25 °C Continuous Drain Current (TJ = 150 °C) Unit TJ, Tstg - 55 to 150 260 °C Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Package limited. Document Number: 73439 S-83052-Rev. B, 29-Dec-08 www.vishay.com 1 Si7222DN Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol a, b Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) Typical Maximum t ≤ 10 s RthJA 38 50 Steady State RthJC 5.5 7 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 94 °C/W. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 40 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ V 40 ID = 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.6 V IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA VDS = 40 V, VGS = 0 V 1 VDS = 40 V, VGS = 0 V, TJ = 55 °C 10 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS ≥ 5 V, VGS = 10 V - 3.8 0.6 20 µA A VGS = 10 V, ID = 5.7 A 0.035 0.042 VGS = 4.5 V, ID = 4.3 A 0.039 0.047 VDS = 15 V, ID = 5.7 A 18 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time www.vishay.com 2 700 VDS = 20 V, VGS = 0 V, f = 1 MHz 76 VDS = 20 V, VGS = 10 V, ID = 5.2 A 19 29 8 12 pF 45 VDS = 20 V, VGS = 4.5 V, ID = 5.2 A 1.5 f = 1 MHz 1.9 VDD = 20 V, RL = 4 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω 50 80 20 30 tf 7 12 td(on) 5 9 12 90 21 35 6 10 2.4 td(on) tr td(off) tr td(off) tf nC 9 VDD = 20 V, RL = 4 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω Ω 15 ns Document Number: 73439 S-83052-Rev. B, 29-Dec-08 Si7222DN Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage TC = 25 °C IS 6 ISM 24 IS = 2 A VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 1.7 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.76 1.2 V 25 40 ns 17 26 nC 14 11 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 73439 S-83052-Rev. B, 29-Dec-08 www.vishay.com 3 Si7222DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 2.5 VGS = 10 thru 3 V 2.0 I D - Drain Current (A) I D - Drain Current (A) 16 12 8 1.5 1.0 TC = 125 °C 2V 4 0.5 25 °C - 55 °C 0 0 1 2 3 4 0.0 0.00 5 0.25 VDS - Drain-to-Source Voltage (V) 0.50 0.75 1.00 1.25 1.50 1.75 2.00 35 40 125 150 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.050 1200 1000 0.044 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.047 0.041 VGS = 4.5 V 0.038 VGS = 10 V 0.035 0.032 0.029 0.026 800 Ciss 600 400 200 Coss 0.023 0.020 Crss 0 0 4 8 12 16 20 0 5 ID - Drain Current (A) 10 ID = 5.7 A ID = 5.2 A 1.8 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 30 2.1 VDS = 10 V 4 3 VDS = 20 V 2 1.5 1.2 0.9 1 2.2 4.4 6.6 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 25 Capacitance 6 0 0.0 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 5 15 8.8 11.0 0.6 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 73439 S-83052-Rev. B, 29-Dec-08 Si7222DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.20 R DS(on) - Drain-to-Source On-Resistance (Ω) 20 I S - Source Current (A) 10 TJ = 150 °C 1 TJ = 25 °C 0.1 0.00 0.2 0.4 0.6 0.8 1.0 ID = 5.7 A 0.16 0.12 TJ = 125 °C 0.08 0.04 TJ = 25 °C 0.00 0 1.2 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 50 40 0.2 Power (W) VGS(th) (V) ID = 250 µA 0.0 - 0.2 - 0.4 - 0.6 - 50 30 20 10 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) 0.1 1 10 100 1000 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* 1 ms I D - Drain Current (A) 10 1 10 ms 100 ms 0.1 1s TA = 25 °C Single Pulse 10 s DC 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * V GS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 73439 S-83052-Rev. B, 29-Dec-08 www.vishay.com 5 Si7222DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 55 ID - Drain Current (A) 44 33 22 Package Limited 11 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 25 3.0 2.5 2.0 Power (W) Power (W) 20 15 1.5 10 1.0 5 0.5 0 0.0 0 25 50 75 100 TC - Case Temperature (°C) Power, Junction-to-Case 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 73439 S-83052-Rev. B, 29-Dec-08 Si7222DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 65 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73439. Document Number: 73439 S-83052-Rev. B, 29-Dec-08 www.vishay.com 7 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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