Si7223DN
www.vishay.com
Vishay Siliconix
Dual P-Channel 30 V (D-S) MOSFET
FEATURES
PowerPAK® 1212-8 Dual
•
•
•
•
D1
D1 8
D2 7
D2 6
5
3.
3
m
1
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
1
2 S
3 G 1
4 S 1
2
G2
m
mm
3.3
APPLICATIONS
S1
S2
• Load switch
PRODUCT SUMMARY
VDS (V)
RDS(on) max. () at VGS = -10 V
RDS(on) max. () at VGS =- 6 V
RDS(on) max. () at VGS = -4.5 V
Qg typ. (nC)
ID (A) f, g
Configuration
TrenchFET® Gen III p-channel power MOSFET
62 % smaller package footprint than SO-8
Thermally enhanced PowerPAK® package
100 % Rg and UIS tested
• Battery protection
-30
0.0264
0.0312
0.0372
12.6
6
Dual
• Adapter and charger
switch
• Hand-held and mobile
devices
G1
D1
P-Channel
MOSFET
G2
D2
P-Channel
MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK 1212-8
Si7223DN-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C)
SYMBOL
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed drain current (t = 100 μs)
ID
IDM
Continuous source-drain diode current
TC = 25 °C
TA = 25 °C
IS
Single pulse avalanche current
Single pulse avalanche energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
TC = 70 °C
Maximum power dissipation
TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature) c, d
PD
TJ, Tstg
LIMIT
-30
± 20
-6 g
-6 g
-6 a, b, g
-6 a, b, g
-40
6g
2.2 a, b
14
9.8
23
14.8
2.6 a, b
1.7 a, b
-55 to +150
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
t 10 s
RthJA
38
48
Maximum junction-to-ambient a, e
°C/W
Maximum junction-to-case (drain)
Steady state
RthJC
4.3
5.4
Notes
a. Surface mounted on 1" x 1" FR4 board
b. t = 10 s
c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
e. Maximum under steady state conditions is 94 °C/W
f. Based on TC = 25 °C
g. Package limited
S17-1484-Rev. A, 25-Sep-17
Document Number: 75609
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si7223DN
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = -250 μA
-30
-
-
V
-
-24.6
-
-
-4.5
-
Static
Drain-source breakdown voltage
VDS temperature coefficient
VDS/TJ
VGS(th) temperature coefficient
VGS(th)/TJ
ID = -250 μA
Gate-source threshold voltage
mV/°C
VGS(th)
VDS = VGS, ID = -250 μA
-1
-
-2.5
V
Gate-source leakage
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 100
nA
Zero gate voltage drain current
IDSS
On-state drain current a
ID(on)
Drain-source on-state resistance a
Forward transconductance a
VDS = -30 V, VGS = 0 V
-
-
1
VDS = -30 V, VGS = 0 V, TJ = 55 °C
-
-
10
VDS -5 V, VGS = 10 V
-10
-
-
VGS = -10 V, ID = -8 A
-
0.0220
0.0264
VGS = -6 V, ID = -7.4 A
-
0.0260
0.0312
VGS = -4.5 V, ID = -6.8 A
-
0.0310
0.0372
VDS = -10 V, ID = -6.8 A
-
20
-
-
1425
-
VDS = -15 V, VGS = 0 V, f = 1 MHz
-
172
-
-
152
-
-
26.3
40
-
12.6
19
VDS = -15 V, VGS = -6 V, ID = -8 A
-
4.3
-
-
4.7
-
f = 1 MHz
1.72
8.6
17.2
-
18
36
-
40
60
-
37
56
tf
-
36
54
td(on)
-
12
20
-
7
14
-
42
64
-
8
41
RDS(on)
gfs
μA
A
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Gate resistance
Rg
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDS = -15 V, VGS = -10 V, ID = -8 A
td(on)
tr
td(off)
tr
td(off)
VDD = -15 V, RL = 3.3
ID -6.4 A, VGEN = -6 V, Rg = 1
VDD = -15 V, RL = 3.3
ID -6.4 A, VGEN = -10 V, Rg = 1
tf
pF
nC
ns
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulse diode forward current
ISM
Body diode voltage
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
TC = 25 °C
IS = -6.4 A, VGS = 0 V
IF = -6.4 A, di/dt = 100 A/μs, TJ = 25 °C
-
-
6c
-
-
40
-
0.8
1.2
V
-
20
40
ns
-
12
20
nC
-
11
-
-
9
-
A
ns
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Package limited
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-1484-Rev. A, 25-Sep-17
Document Number: 75609
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si7223DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
80
10000
40
1000
20
100
VGS = 3 V
10
60
1000
1st line
2nd line
VGS = 4 V
2nd line
ID - Drain Current (A)
30
1st line
2nd line
2nd line
ID - Drain Current (A)
VGS = 10 V thru 5 V
40
TC = 25 °C
100
20
TC = 125 °C
TC = -55 °C
0
0
10
0
0.5
1
1.5
2
2.5
10
0
3
2
4
VGS - Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
Axis Title
10000
VGS = 6 V
100
0.02
VGS = 10 V
Ciss
1500
1000
1st line
2nd line
1000
2nd line
C - Capacitance (pF)
0.06
VGS = 4.5 V
10000
2000
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
8
VDS - Drain-to-Source Voltage (V)
2nd line
0.08
0.04
6
1000
100
500
Coss
Crss
0
0
10
10
20
30
10
0
40
6
12
24
ID - Drain Current (A)
2nd line
VDS - Drain-to-Source Voltage (V)
2nd line
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
Axis Title
1.6
VDS = 15 V
8
1000
1st line
2nd line
VDS = 7.5 V
6
VDS = 24 V
4
100
2
0
10
0
6
12
18
24
30
2nd line
RDS(on) - On-Resistance (Normalized)
10000
ID = 8 A
30
Axis Title
10
2nd line
VGS - Gate-to-Source Voltage (V)
18
10000
VGS = 10 V / ID = 8 A; VGS = 6 V / ID = 7.4 A
1.4
1000
1.2
VGS = 4.5 V,
ID = 6.8 A
1.0
100
0.8
0.6
10
-50
-25
0
25
50
75
100 125 150
Qg - Total Gate Charge (nC)
2nd line
TJ - Junction Temperature (°C)
2nd line
Gate Charge
On-Resistance vs. Junction Temperature
S17-1484-Rev. A, 25-Sep-17
1st line
2nd line
0
Document Number: 75609
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si7223DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
0.10
2nd line
RDS(on) - On-Resistance (Ω)
10000
1000
1
1st line
2nd line
2nd line
IS - Source Current (A)
10
TJ = 150 °C
TJ = 25 °C
0.1
100
0.01
0.001
0.08
1000
0.06
0.04
0.2
0.4
0.6
0.8
1.0
TJ = 150 °C
0.02
100
TJ = 25 °C
0
10
0
10000
1st line
2nd line
100
10
0
1.2
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
2.2
10000
ID = 250 μA
2.0
40
Power (W)
1000
1.8
1st line
2nd line
2nd line
VGS(th) (V)
50
1.6
30
20
100
1.4
10
1.2
10
-50
-25
0
25
50
75
0
0.001
100 125 150
0.01
0.1
TJ - Temperature (°C)
2nd line
Threshold Voltage
1
Time (s)
10
100
600
Single Pulse Power, Junction-to-Ambient
Axis Title
100
10000
IDM limited
Limited by RDS(on)
100 μs
(1)
1 ms
1
1000
10 ms
100 ms
0.1
10 s, 1 s
100
DC
1st line
2nd line
2nd line
ID - Drain Current (A)
10
0.01
BVDSS limited
TA = 25 °C
Single pulse
0.001
10
0.1
(1)
1
10
100
VDS - Drain-to-Source Voltage (V)
VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S17-1484-Rev. A, 25-Sep-17
Document Number: 75609
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si7223DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
10000
1.6
1.2
1st line
2nd line
2nd line
Power (W)
1000
0.8
100
0.4
0
10
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
2nd line
Power Junction to Ambient
Axis Title
Axis Title
10000
21
21
14
10
25
50
100
7
0
0
14
100
Package limited
7
1st line
2nd line
1000
2nd line
Power (W)
1000
1st line
2nd line
2nd line
ID - Drain Current (A)
28
10000
28
75
100
125
150
0
10
0
25
50
75
100
TC - Case Temperature (°C)
2nd line
TC - Case Temperature (°C)
2nd line
Current Derating a
Power Derating
125
150
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S17-1484-Rev. A, 25-Sep-17
Document Number: 75609
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si7223DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
2
1
Duty cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 94 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single pulse
0.01
10-4
10
-3
4. Surface Mounted
10
-2
-1
10
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?75609.
S17-1484-Rev. A, 25-Sep-17
Document Number: 75609
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
D4
PowerPAK® 1212-8, (Single / Dual)
W
H
E2
E4
L
K
M
θ
e
1
Z
D5
D
D2
2
2
D1
8
1
5
4
θ
4
b
3
L1
E3
A1
Backside view of single pad
H
2
E1
E
Detail Z
L
K
E2
E4
D2 D3(2x) D4
c
A
H
1
D1
2
K1
Notes
1. Inch will govern
2 Dimensions exclusive of mold gate burrs
3. Dimensions exclusive of mold flash and cutting burrs
D2
3
4
b
θ
D5
θ
E3
Backside view of dual pad
DIM.
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.97
1.04
1.12
0.038
0.041
0.044
A1
0.00
-
0.05
0.000
-
0.002
b
0.23
0.30
0.41
0.009
0.012
0.016
c
0.23
0.28
0.33
0.009
0.011
0.013
D
3.20
3.30
3.40
0.126
0.130
0.134
D1
2.95
3.05
3.15
0.116
0.120
0.124
D2
1.98
2.11
2.24
0.078
0.083
0.088
D3
0.48
-
0.89
0.019
-
0.035
D4
0.47 typ.
D5
2.3 typ.
0.0185 typ
0.090 typ
E
3.20
3.30
3.40
0.126
0.130
0.134
E1
2.95
3.05
3.15
0.116
0.120
0.124
E2
1.47
1.60
1.73
0.058
0.063
0.068
E3
1.75
1.85
1.98
0.069
0.073
0.078
E4
0.034 typ.
0.013 typ.
e
0.65 BSC
0.026 BSC
K
0.86 typ.
K1
0.35
-
0.034 typ.
-
0.014
-
-
H
0.30
0.41
0.51
0.012
0.016
0.020
L
0.30
0.43
0.56
0.012
0.017
0.022
L1
0.06
0.13
0.20
0.002
0.005
0.008
0°
-
12°
0°
-
12°
W
0.15
0.25
0.36
0.006
0.010
0.014
M
0.125 typ.
0.005 typ.
ECN: S16-2667-Rev. M, 09-Jan-17
DWG: 5882
Revison: 09-Jan-17
Document Number: 71656
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single
0.152
(3.860)
0.039
0.068
(0.990)
(1.725)
0.010
(0.255)
(2.390)
0.094
0.088
(2.235)
0.016
(0.405)
0.026
(0.660)
0.025
0.030
(0.635)
(0.760)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72597
Revision: 21-Jan-08
www.vishay.com
7
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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Revision: 09-Jul-2021
1
Document Number: 91000
