SI7344DP-T1-E3

Si7344DP Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.008 @ VGS = 10 V 17 0.012 @ VGS = 4.5 V 14 • TrenchFET® Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile • PWM Optimized Available RoHS* COMPLIANT APPLICATIONS • DC/DC conversion High-Side - Desktop - Server • Synchronous Rectification PowerPAK SO-8 S 6.15 mm 5.15 mm 1 S 2 S 3 G D 4 D 8 D 7 D 6 G D 5 Bottom View S Ordering Information: Si7344DP-T1 Si7344DP-T1—E3 (Lead (Pb)-Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150°C)a TA = 25°C TA = 70°C Pulsed Drain Current (10 µs Pulse Width) IDM IS Continuous Source Current (Diode Conduction)a TA = 25°C TA = 70°C Maximum Power Dissipationa ID Operating Junction and Storage Temperature Range PD TJ, Tstg Soldering Recommendations (Peak Temperature)b,c 10 secs Steady State 20 ±20 Unit V 17 14 11 9 50 3.7 4.1 2.6 1.6 1.8 1.1 –55 to 150 260 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Symbol t ≤ 10 sec Steady State Steady State RthJA RthJC Typical 22 55 4.5 Maximum 30 70 5.5 Unit °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Solder Profile ( http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72128 S-51773-Rev. B, 31-Oct-05 www.vishay.com 1 Si7344DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Gate Threshold Voltage Test Condition Min 0.8 Typ Max Unit Static VGS(th) VDS = VGS, ID = 250 µA 2.1 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ±20 V ±100 nA IDSS VDS = 20 V, VGS = 0 V 1 Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V, TJ = 55°C 5 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea rDS(on) VDS ≥ 5 V, VGS = 10 V µA 30 A VGS = 10 V, ID = 17 A 0.006 0.008 VGS = 4.5 V, ID = 14 A 0.0095 0.012 Forward Transconductancea gfs VDS = 6 V, ID = 17 A 33 Diode Forward Voltagea VSD IS = 3.7 A, VGS = 0 V 0.75 1.1 10 15 VDS = 10 V, VGS = 4.5 V, ID = 17 A 3.3 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 3.1 Gate Resistance Rg 1.0 Turn-On Delay Time td(on) Rise Time VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω tr Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr IF = 3.7 A, di/dt = 100 A/µs nC Ω 14 25 15 25 40 65 15 25 35 70 ns Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C unless noted 60 60 VGS = 10 thru 4 V 50 40 I D - Drain Current (A) I D - Drain Current (A) 50 30 20 3V 10 40 30 20 TC = 125˚C 25˚C 10 -55 ˚C 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 72128 S-51773-Rev. B, 31-Oct-05 Si7344DP Vishay Siliconix 25 °C unless noted 0.020 2000 0.016 1600 0.012 C - Capacitance (pF) r DS(on) - On-Resistance ( Ω ) TYPICAL CHARACTERISTICS VGS = 4.5 V 0.008 VGS = 10 V 1200 800 Coss Crss 400 0.004 0 0.000 0 10 20 30 40 0 50 4 12 16 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Capacitance 20 1.6 VDS = 10 V ID = 17 A 3.6 2.4 1.2 0 VGS = 10 V ID = 17 A 1.4 r DS(on) - On-Resistance (Normalized) 4.8 3 6 9 12 1.2 1.0 0.8 0.6 -50 0.0 15 -25 0 Gate Charge 50 75 100 125 150 On-Resistance vs. Junction Temperature 0.040 r DS(on) - On-Resistance ( Ω ) 60 TJ = 150˚C 10 TJ = 25˚C 0.032 0.024 ID = 17 A 0.016 0.008 0.000 1 0.00 25 TJ - Junction Temperature (˚C) Qg - Total Gate Charge (nC) I S - Source Current (A) 8 On-Resistance vs. Drain Current 6.0 V GS - Gate-to-Source Voltage (V) Ciss 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 72128 S-51773-Rev. B, 31-Oct-05 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si7344DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 0.4 200 0.2 160 -0.0 Power (W) V GS(th) Variance (V) ID = 250 µA -0.2 120 80 -0.4 40 -0.6 -0.8 -50 -25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (˚C) 0.1 1 10 Time (sec) Single Pulse Power Threshold Voltage 100 Limited by rDS(on) 1 ms I D - Drain Current (A) 10 10 ms 100 ms 1 1s 10 s 0.1 TC = 25˚C Single Pulse dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 55˚C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72128 S-51773-Rev. B, 31-Oct-05 Si7344DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72128. Document Number: 72128 S-51773-Rev. B, 31-Oct-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1