SI7409ADN-T1-E3

Si7409ADN Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.019 at VGS = - 4.5 V - 11 0.031 at VGS = - 2.5 V - 8.5 Qg (Typ.) 25 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile • VDS Optimized for Load Switch • 100 % Rg Tested APPLICATIONS PowerPAK 1212-8 • Load Switch S 3.30 mm S 3.30 mm 1 S 2 S 3 G 4 G D 8 D 7 D 6 D 5 Bottom View D Ordering Information: Si7409ADN-T1-E3 (Lead (Pb)-free) Si7409ADN-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C Continuous Source Current (Diode Conduction)a IS TA = 25 °C Maximum Power Dissipationa TA = 85 °C PD - 11 -7 -5 - 40 - 3.2 - 1.3 3.8 1.5 2.0 0.8 TJ, Tstg Operating Junction and Storage Temperature Range V - 7.9 IDM Pulsed Drain Current Soldering Recommendations (Peak ID - 55 to 150 Temperature)b, c Unit A W °C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case Symbol t ≤ 10 s Steady State Steady State RthJA RthJC Typical Maximum 26 33 65 81 1.9 2.4 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Reliability Manual for profile. The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 73246 S-83051-Rev. C, 29-Dec-08 www.vishay.com 1 Si7409ADN Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. - 0.6 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = - 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea Diode Forward Voltage a V nA VDS = - 30 V, VGS = 0 V -1 VDS = - 30 V, VGS = 0 V, TJ = 85 °C -5 VDS ≤ - 5 V, VGS = - 4.5 V RDS(on) Forward Transconductancea - 1.5 ± 100 µA - 40 A VGS = - 4.5 V, ID = - 11 A 0.015 0.019 VGS = - 2.5 V, ID = - 8.5 A 0.025 0.031 gfs VDS = - 15 V, ID = - 11 A 40 VSD IS = - 3.2 A, VGS = 0 V - 0.7 - 1.2 25 40 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg VDS = - 15 V, VGS = - 4.5 V, ID = - 11 A 9 f = 1.0 MHz 3.3 td(on) Turn-On Delay Time VDD = - 15 V, RL = 15 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω tr Rise Time td(off) Turn-Off Delay Time nC 5 6.5 10 30 45 50 75 115 175 Fall Time tf 75 115 Source-Drain Reverse Recovery Time trr 60 90 Reverse Recovery Charge Qrr 100 150 IF = - 3.2 A, dI/dt = 100 A/µs Ω ns nC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 30 VGS = 5 thru 2 V 25 20 I D - Drain Current (A) I D - Drain Current (A) 25 1.5 V 15 10 20 15 10 TC = 125 °C 5 5 25 °C 1V - 55 °C 0 0 1 2 3 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 4 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 73246 S-83051-Rev. C, 29-Dec-08 Si7409ADN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4000 0.024 3200 VGS = 2.5 V C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.030 0.018 VGS = 4.5 V 0.012 Ciss 2400 1600 0.006 800 0.000 0 Coss Crss 0 5 10 15 20 25 0 30 10 15 20 25 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 30 1.6 5 VDS = 15 V ID = 11 A 4 VGS = 4.5 V ID = 11 A 1.4 RDS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 5 3 2 1.2 1.0 0.8 1 0.6 - 50 0 0 5 10 15 20 25 30 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 0.12 30 10 RDS(on) - On-Resistance (Ω) I S - Source Current (A) 0.10 TJ = 150 °C 1 0.1 TJ = 25 °C 0.01 0.001 0.0 ID = 11 A 0.08 0.06 0.04 0.02 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 73246 S-83051-Rev. C, 29-Dec-08 1.2 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si7409ADN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 50 ID = 250 µA 40 0.2 Power (W) VGS(th) Variance (V) 0.4 0.0 30 20 - 0.2 TA = 25 °C Single Pulse 10 - 0.4 - 0.6 - 50 0 - 25 0 25 50 75 100 125 150 0.01 0.1 1 TJ - Temperature (°C) 10 100 600 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* IDM Limited 100 µs, 10 µs I D - Drain Current (A) 10 1 ms 10 ms 1 ID(on) Limited 100 ms 1s TA = 25 °C Single Pulse 0.1 10 s DC, 100 s BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which RDS (on) is specified Safe Operating Area, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 65 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 73246 S-83051-Rev. C, 29-Dec-08 Si7409ADN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73246. Document Number: 73246 S-83051-Rev. C, 29-Dec-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1