SI7413DN-T1-GE3

Si7413DN Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 13.2 - 20 0.020 at VGS = - 2.5 V - 11.4 0.029 at VGS = - 1.8 V - 9.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • New PowerPAK® Package - Low Thermal Resistance, RthJC - Low 1.07 mm Profile APPLICATIONS PowerPAK 1212-8 • Load Switch S 3.30 mm S 3.30 mm 1 S 2 S 3 G 4 G D 8 D 7 D 6 D 5 Bottom View D Ordering Information: Si7413DN-T1-E3 (Lead (Pb)-free) Si7413DN-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C Continuous Source Current (Diode Conduction)a IS TA = 25 °C Maximum Power Dissipationa TA = 85 °C PD - 8.4 - 9.5 - 6.1 - 30 - 3.2 - 1.3 3.8 1.5 2.0 0.8 TJ, Tstg Operating Junction and Storage Temperature Range V - 13.2 IDM Pulsed Drain Current Soldering Recommendations (Peak ID - 55 to 150 Temperature)b, c Unit A W °C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case Symbol t ≤ 10 s Steady State Steady State RthJA RthJC Typical Maximum 26 33 65 81 1.9 2.4 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 72616 S-83051-Rev. C, 29-Dec-08 www.vishay.com 1 Si7413DN Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. - 0.4 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = - 400 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistance a Diode Forward Voltage V nA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 85 °C -5 VDS ≤ - 5 V, VGS = - 4.5 V µA - 30 A VGS = - 4.5 V, ID = - 13.2 A 0.012 0.015 VGS = - 2.5 V, ID = - 11.4 A 0.016 0.020 VGS = - 1.8 V, ID = - 3.5 A 0.023 0.029 gfs VDS = - 15 V, ID = - 13.2 A 47 VSD IS = - 3.2 A, VGS = 0 V - 0.8 - 1.2 34 51 VDS = - 10 V, VGS = - 4.5 V, ID = - 13.2 A 5.4 RDS(on) Forward Transconductancea a - 1.0 ± 100 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Rg Gate Resistance f = 1 MHz VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr Ω 5 td(on) Turn-On Delay Time nC 8.8 IF = - 3.2 A, dI/dt = 100 A/µs 30 45 50 75 200 300 95 140 35 55 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 30 25 VGS = 5 thru 2 V 20 I D - Drain Current (A) I D - Drain Current (A) 25 15 1.5 V 10 20 15 10 TC = 125 °C 5 5 25 °C - 55 °C 1V 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 5 0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 72616 S-83051-Rev. C, 29-Dec-08 Si7413DN Vishay Siliconix 0.05 5000 0.04 4000 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.03 VGS = 1.8 V VGS = 2.5 V 0.02 0.01 Ciss 3000 2000 1000 VGS = 4.5 V Coss Crss 0 0.00 0 5 10 15 20 25 0 30 8 12 16 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 5 20 1.6 VDS = 10 V ID = 13.2 A 4 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 4 3 2 1 VGS = 4.5 V ID = 13.2 A 1.4 1.2 1.0 0.8 0 0 5 10 15 20 25 30 35 0.6 - 50 40 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 30 150 0.06 0.05 R DS(on) - On-Resistance (Ω) I S - Source Current (A) TJ = 150 °C 10 TJ = 25 °C 1 0.0 ID = 13.2 A 0.04 ID = 3.5 A 0.03 0.02 0.01 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 72616 S-83051-Rev. C, 29-Dec-08 1.2 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si7413DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 50 ID = 400 µA 40 0.2 Power (W) V GS(th) Variance (V) 0.3 0.1 30 20 0.0 10 - 0.1 - 0.2 - 50 0 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by R DS (on)* IDM Limited I D - Drain Current (A) 10 P(t) = 0.001 P(t) = 0.01 ID(on) Limited 1 P(t) = 0.1 P(t) = 1 P(t) = 10 DC TA = 25 °C Single Pulse 0.1 BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 65 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72616 S-83051-Rev. C, 29-Dec-08 Si7413DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72616. Document Number: 72616 S-83051-Rev. 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