Si7445DP
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) (Ω)
ID (A)
0.0077 at VGS = - 4.5 V
- 19
0.0094 at VGS = - 2.5 V
- 17
0.0125 at VGS = - 1.8 V
- 15
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• New Low Thermal Resistance PowerPAK®
Package with Low 1.07 mm Profile
• 100 % Rg Tested
APPLICATIONS
• Load Switch Battery Applications
PowerPAK SO-8
S
6.15 mm
5.15 mm
1
S
2
S
3
G
S
4
D
8
D
7
G
D
6
D
5
Bottom View
D
Ordering Information: Si7445DP-T1-E3 (Lead (Pb)-free)
Si7445DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150°C)a
Symbol
VDS
VGS
TA = 25°C
TA = 70°C
Pulsed Drain Current
IDM
IS
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
ID
TA = 25°C
TA = 70°C
Operating Junction and Storage Temperature Range
PD
TJ, Tstg
Soldering Recommendations (Peak Temperature)b, c
10 s
- 19
- 15
- 4.3
5.4
3.4
Steady State
- 20
±8
- 12
-9
- 50
- 1.6
1.9
1.2
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case (Drain)
Symbol
t ≤ 10 s
Steady State
Steady State
RthJA
RthJC
Typical
18
52
1.0
Maximum
23
65
1.3
Unit
°C/W
Notes
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71626
S09-0270-Rev. D, 16-Feb-09
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1
Si7445DP
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
- 0.45
Typ.
Max.
Unit
Static
VGS(th)
VDS = VGS, ID = - 250 µA
- 1.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
± 100
nA
IDSS
VDS = - 20 V, VGS = 0 V
-1
Zero Gate Voltage Drain Current
VDS = - 20 V, VGS = 0 V, TJ = 70 °C
- 10
On-State Drain Currenta
ID(on)
VDS ≤ - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 19 A
0.0064
0.0077
RDS(on)
VGS = - 2.5 V, ID = - 17 A
0.0078
0.0094
VGS = - 1.8 V, ID = - 10 A
0.0105
0.0125
Gate Threshold Voltage
Drain-Source On-State
Resistancea
Forward Transconductancea
Diode Forward Voltage
a
- 40
µA
A
gfs
VDS = - 15 V, ID = - 19 A
75
VSD
IS = - 4.3 A, VGS = 0 V
- 0.65
- 1.1
92
140
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
VDS = - 15 V, VGS = - 5 V, ID = - 19 A
Rg
Turn-On Delay Time
19
1
td(on)
Rise Time
VDD = - 15 V, RL = 15 Ω
ID ≅ - 1.0 A, VGEN = - 4.5 V, Rg = 6 Ω
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
nC
16.5
IF = - 4.3 A, dI/dt = 100 A/µs
2
3.4
40
60
45
65
400
600
190
290
50
80
Ω
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
50
VGS = 5 V thru 2 V
40
I D - Drain Current (A)
I D - Drain Current (A)
40
30
1.5 V
20
10
30
20
TC = 125 °C
10
25 °C
- 55 °C
0
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
Output Characteristics
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2
10
0
0.0
0.5
1.0
1.5
2.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 71626
S09-0270-Rev. D, 16-Feb-09
Si7445DP
Vishay Siliconix
0.020
15000
0.016
12000
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
VGS = 1.8 V
0.012
VGS = 2.5 V
0.008
6000
3000
Coss
Crss
0
0
5
10
15
20
25
30
0
4
8
12
16
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
20
1.6
5
VDS = 15 V
ID = 19 A
4
3
2
1
20
40
60
80
100
1.0
0.8
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature ( °C)
Gate Charge
On-Resistance vs. Junction Temperature
150
0.030
R DS(on) - On-Resistance (Ω)
50
TJ = 150 °C
10
TJ = 25 °C
1
0.0
1.2
0.6
- 50
0
0
VGS = 4.5 V
ID = 19 A
1.4
R DS(on) - On-Resistance
(Normalized)
V GS - Gate-to-Source Voltage (V)
9000
VGS = 4.5 V
0.004
0.000
I S - Source Current (A)
Ciss
0.024
ID = 19 A
0.018
0.012
0.006
0.000
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 71626
S09-0270-Rev. D, 16-Feb-09
1.2
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
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Si7445DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.6
200
ID = 250 µA
160
Power (W)
V GS(th) Variance (V)
0.4
0.2
120
0.0
80
- 0.2
40
- 0.4
- 50
- 25
0
25
50
75
100
TJ - Temperature (°C)
125
150
0
0.001
0.01
0.1
Time (s)
1
10
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 65 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
10 -4
4. Surface Mounted
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, seem www.vishay.com/ppg?71626.
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Document Number: 71626
S09-0270-Rev. D, 16-Feb-09
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Revision: 01-Jan-2022
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Document Number: 91000
