SI7447ADP-T1-E3

Si7447ADP Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) - 30 0.0065 at VGS = - 10 V - 35 100 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 S 2 APPLICATIONS S 3 D D 7 S • Battery and Load Switching - Notebook Computers - Notebook Battery Packs G 4 8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile • 100 % Rg Tested G D 6 D 5 Bottom View D Ordering Information: Si7447ADP-T1-E3 (Lead (Pb)-free) Si7447ADP-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS ± 25 TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C Continuous Source-Drain Diode Current - 28 ID - 21.5b, c - 17b, c - 60 IDM Single Pulse Avalanche Current Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 70 °C TA = 25 °C - 4.3b, c 40 IAS EAS 80 mJ 83.3 53.3 PD W 5.4b, c 3.4b, c - 55 to 150 TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range A - 28 IS TC = 25 °C Maximum Power Dissipation V - 35 TA = 70 °C Pulsed Drain Current Unit Soldering Recommendations (Peak Temperature)d, e °C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) Symbol RthJA Typical Maximum t ≤ 10 s 18 23 Steady State RthJC 1.0 1.3 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 65 °C/W. Document Number: 73358 S09-0273-Rev. C, 16-Feb-09 www.vishay.com 1 Si7447ADP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient V - 33 ID = - 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA -3 V IGSS VDS = 0 V, VGS = ± 25 V ± 100 nA VDS = - 30 V, VGS = 0 V -1 VDS = - 30 V, VGS = 0 V, TJ = 55 °C - 10 Gate-Source Leakage IDSS Zero Gate Voltage Drain Current Drain-Source On-State Resistance -1 - 2.0 ID(on) VDS ≥ - 5 V, VGS = - 10 V RDS(on) VGS = - 10 V, ID = - 24 A 0.0054 gfs VDS = - 15 V, ID = - 24 A 50 On-State Drain Currenta a 5.3 Forward Transconductancea - 30 µA A 0.0065 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 930 Total Gate Charge Qg 100 Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 4650 VDS = - 15 V, VGS = 0 V, f = 1 MHz VDS = - 15 V, VGS = - 10 V, ID = - 24 A VDD = - 15 V, RL = 1.5 Ω ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω tr Rise Time td(off) Turn-Off Delay Time tf Fall Time 150 nC 15.5 25 f = 1 MHz td(on) Turn-On Delay Time pF 1200 1.7 3.5 5.3 20 30 25 40 82 125 98 150 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage TC = 25 °C IS - 28 ISM - 60 IS = - 4.3 A VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = - 19 A, dI/dt = - 100 A/µs, TJ = 25 °C A - 0.72 - 1.1 V 47 70 ns 50 75 nC 22 25 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73358 S09-0273-Rev. C, 16-Feb-09 Si7447ADP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 1.2 VGS = 10 V thru 5 V 1.0 I D - Drain Current (A) I D - Drain Current (A) 50 40 4V 30 20 0.8 0.6 TC = 125 °C 0.4 25 °C 0.2 10 - 55 °C 0 0.0 0.4 0.8 1.2 1.6 0.0 0.0 2.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.018 3.5 4.0 6500 5200 0.014 C - Capacitance (pF) RDS(on) - On-Resistance (mΩ) 0.016 VGS = 4.5 V 0.012 0.010 3900 2600 Coss 0.008 1300 VGS = 10 V 0.006 Crss 0.004 0 0 10 20 30 40 50 60 0 5 10 15 20 25 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 30 1.6 10 ID = 24 A 1.4 8 VDS = 10 V RDS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) Ciss 6 VDS = 15 V 4 VDS = 20 V 2 0 0 21 42 63 84 105 VGS = 10 V 1.2 VGS = 4.5 V 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 73358 S09-0273-Rev. C, 16-Feb-09 150 www.vishay.com 3 Si7447ADP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.05 RDS(on) - Drain-to-Source On-Resistance (Ω) I S - Source Current (A) 60 TJ = 25 °C TJ = 150 °C 10 1 0.00 0.2 0.4 0.6 0.8 1.0 0.04 0.03 0.02 TJ = 150 °C 0.01 TJ = 25 °C 0.00 0 1.2 2 6 8 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.8 200 0.6 160 0.2 Power (W) ID = 250 µA 0.4 VGS(th) (V) 4 ID = 5 mA 120 80 0.0 40 - 0.2 - 0.4 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 Time (s) TJ - Temperature (°C) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* I D - Drain Current (A) 10 1 ms 10 ms 100 ms 1 1s 10 s 0.1 TC = 25 °C Single Pulse DC 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73358 S09-0273-Rev. C, 16-Feb-09 Si7447ADP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 ID - Drain Current (A) 80 60 40 Package Limited 20 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 100 2.5 80 2.0 Power (W) Power (W) Current Derating* 60 1.5 40 1.0 20 0.5 0 0.0 0 25 50 75 100 TC - Case Temperature (°C) Power, Junction-to-Case 125 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73358 S09-0273-Rev. C, 16-Feb-09 www.vishay.com 5 Si7447ADP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73358. www.vishay.com 6 Document Number: 73358 S09-0273-Rev. 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