SI7448DP-T1-E3

Si7448DP www.vishay.com Vishay Siliconix N-Channel 20 V (D-S) Fast Switching MOSFET FEATURES PowerPAK® SO-8 Single D 5 D 6 D 7 D 8 6. 15 m m m 1 m .15 5 Top View 4 G Bottom View 3 S 2 S 1 S • TrenchFET® power MOSFET • New low thermal resistance PowerPAK® package with low 1.07 mm profile • 100 % Rg tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Available APPLICATIONS • Synchronous rectifier low output voltage • Portable computer battery selection or protection D PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 4.5 V RDS(on) max. () at VGS = 2.5 V Qg typ. (nC) ID (A) Configuration 20 0.0065 0.0090 38 22 Single G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free PowerPAK SO-8 Si7448DP-T1-E3 Si7448DP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL 10 s STEADY STATE Drain-source voltage VDS 20 20 Gate-source voltage VGS ± 12 ± 12 TA = 25 °C Continuous drain current (TJ = 150 °C) a TA = 70 °C Pulsed drain current Continuous source current (diode conduction) a TA = 25 °C Maximum power dissipation a TA = 70 °C Operating junction and storage temperature range 22 13.4 17.6 10.7 IDM 50 50 IS 4.3 1.6 5.2 1.9 3.3 1.2 ID PD TJ, Tstg -55 to +150 Soldering recommendations (peak temperature) b, c UNIT V A W °C 260 THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient a Maximum junction-to-case (drain) SYMBOL t  10 s Steady state Steady state RthJA RthJC TYPICAL MAXIMUM 19 24 52 65 1.5 1.8 UNIT °C/W Notes a. Surface mounted on 1" x 1" FR4 board b. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S09-0270-Rev. D, 16-Feb-09 Document Number: 71635 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si7448DP www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Gate threshold voltage VGS(th) VDS = VGS, ID = 250 μA 0.6 - 1.5 V Gate-body leakage IGSS VDS = 0 V, VGS = ± 12 V - - ± 100 nA Zero gate voltage drain current IDSS VDS = 20 V, VGS = 0 V - - 1 VDS = 20 V, VGS = 0 V, TJ = 85°C - - 20 On-state drain current a ID(on) VDS  5 V, VGS = 4.5 V 50 - - VGS = 4.5 V, ID = 22 A - 0.0054 0.0065 VGS = 2.5 V, ID = 19 A - 0.0075 0.0090 gfs VDS = 15 V, ID = 22 A - 90 - S VSD IS = 3 A, VGS = 0 V - 0.8 1.2 V - 38 50 Drain-source on-state resistance a Forward transconductance a Diode forward voltage a RDS(on) μA A  Dynamic b Total gate charge Qg VDS = 10 V, VGS = 4.5 V, ID = 21 A Gate-source charge Qgs - 8 - Gate-drain charge Qgd - 8.5 - Gate resistance Rg 0.2 0.9 1.1 Turn-on delay time Rise time Turn-off delay time td(on) - 22 35 tr - 22 35 td(off) Fall time tf Source-drain reverse recovery time trr VDD = 10 V, RL = 10  ID  1 A, VGEN = 10 V, Rg = 6  IF = 3 A, di/dt = 100 A/μs - 125 190 - 60 90 - 60 90 nC  ns Notes a. Pulse test: pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing   Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S09-0270-Rev. D, 16-Feb-09 Document Number: 71635 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si7448DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 50 5 VDS = 10 V ID = 22 A I D - Drain Current (A) VGS - Gate-to-Source Voltage (V) VGS = 4.5 V thru 2.5 V 40 2V 30 20 10 4 3 2 1 1.5 V 0 0 0 1 2 3 4 5 0 8 16 24 32 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Output Characteristics Gate Charge 50 40 50 I S - Source Current (A) I D - Drain Current (A) 40 30 20 TJ = 150 °C 10 TJ = 25 °C TC = 125 °C 10 25 °C -55 °C 0 0.0 0.5 1.0 1.5 2.0 1 0.0 2.5 0.2 7000 0.010 6000 C - Capacitance (pF) R DS(on) - On-Resistance () 0.012 VGS = 2.5 V 0.006 0.6 0.8 1.0 1.2 Source-Drain Diode Forward Voltage Transfer Characteristics 0.008 0.4 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) VGS = 4.5 V 0.004 0.002 Ciss 5000 4000 3000 2000 Coss 1000 Crss 0.000 0 0 10 20 30 40 50 0 4 8 12 16 I D - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance S09-0270-Rev. D, 16-Feb-09 20 Document Number: 71635 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si7448DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.6 VGS = 10 V ID = 22 A 0.4 ID = 250 µA 1.4 0.2 VGS(th) Variance (V) R DS(on) - On-Resistance (Normalized) 1.6 1.2 1.0 0.0 -0.2 -0.4 -0.6 0.8 -0.8 0.6 -50 -25 0 25 50 75 100 125 -1.0 -50 150 -25 0 25 TJ - Junction Temperature (°C) 75 100 125 150 TJ - Temperature (°C) On-Resistance vs. Junction Temperature Threshold Voltage 100 0.020 ID = 22 A 80 0.015 Power (W) R DS(on) - On-Resistance () 50 0.010 0.005 60 40 20 0.000 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage S09-0270-Rev. D, 16-Feb-09 0 0.001 0.01 0.1 1 10 Time (s) Single Pulse Power, Junction-to-Ambient Document Number: 71635 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si7448DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 68 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case                      Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71635. S09-0270-Rev. D, 16-Feb-09 Document Number: 71635 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8, (Single/Dual) L H E2 K E4 θ D4 W 1 M 1 Z 2 D5 D2 e 2 D1 D 2 D 3 4 θ 4 b 3 L1 E3 θ A1 Backside View of Single Pad H K E2 E4 L 1 D1 D5 2 D2 Detail Z K1 2 E1 E D3 (2x) D4 c A θ 3 4 Notes 1. Inch will govern. 2 Dimensions exclusive of mold gate burrs. 3. Dimensions exclusive of mold flash and cutting burrs. DIM. A A1 b c D D1 D2 D3 D4 D5 E E1 E2 E3 E4 e K K1 H L L1  W M b D2 E3 Backside View of Dual Pad MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. 0.97 1.04 0.41 0.28 5.15 4.90 3.76 1.50 0.57 typ. 3.98 typ. 6.15 5.89 3.66 3.78 0.75 typ. 1.27 BSC 1.27 typ. 0.61 0.61 0.13 0.25 0.125 typ. 1.12 0.05 0.51 0.33 5.26 5.00 3.91 1.68 0.038 0 0.013 0.009 0.199 0.189 0.140 0.052 0.044 0.002 0.020 0.013 0.207 0.197 0.154 0.066 6.25 5.99 3.84 3.91 0.238 0.228 0.137 0.145 0.71 0.71 0.20 12° 0.36 0.022 0.020 0.020 0.002 0° 0.006 0.041 0.016 0.011 0.203 0.193 0.148 0.059 0.0225 typ. 0.157 typ. 0.242 0.232 0.144 0.149 0.030 typ. 0.050 BSC 0.050 typ. 0.024 0.024 0.005 0.010 0.005 typ. 0.33 0.23 5.05 4.80 3.56 1.32 6.05 5.79 3.48 3.68 0.56 0.51 0.51 0.06 0° 0.15 0.246 0.236 0.151 0.154 0.028 0.028 0.008 12° 0.014 ECN: S17-0173-Rev. L, 13-Feb-17 DWG: 5881 Revison: 13-Feb-17 1 Document Number: 71655 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single 0.260 (6.61) 0.150 (3.81) 0.050 0.174 (4.42) 0.154 (1.27) 0.026 (0.66) (3.91) 0.024 (0.61) 0.050 0.032 0.040 (1.27) (0.82) (1.02) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72599 Revision: 21-Jan-08 www.vishay.com 15 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000