SI7452DP-T1-E3

Si7452DP Vishay Siliconix N-Channel 60-V (D-S) Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 60 0.0083 at VGS = 10 V 19.3 105 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile • 100 % Rg Tested • High Threshold Voltage At High Temperature PowerPAK SO-8 S 6.15 mm 5.15 mm 1 S D 2 S 3 G 4 D 8 D G 7 D 6 D 5 S Bottom View N-Channel MOSFET Ordering Information: Si7452DP-T1-E3 (Lead (Pb)-free) Si7452DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C IDM IS IAS EAS Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current Avalanche Energy TA = 25 °C TA = 70 °C Maximum Power Dissipationa ID PD TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b,c 10 s 19.3 15.5 4.5 5.4 3.4 Steady State 60 ± 20 11.5 9.2 60 1.6 40 80 1.9 1.2 - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Symbol a t ≤ 10 s Steady State Steady State RthJA Typical 18 52 1.0 Maximum 23 65 1.3 Unit °C/W RthJC Maximum Junction-to-Case (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 72972 S09-0273-Rev. D, 16-Feb-09 www.vishay.com 1 Si7452DP Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Condition Min. 3.4 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = 250 µA 4.5 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA IDSS VDS = 60 V, VGS = 0 V 1 Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V, TJ = 55 °C 5 Gate Threshold Voltage VDS ≥ 5 V, VGS = 10 V ID(on) On-State Drain Currenta Drain-Source On-State Resistance a Forward Transconductance Diode Forward Voltagea a µA 40 A RDS(on) VGS = 10 V, ID = 19.3 A 0.007 gfs VDS = 15 V, ID = 19.3 A 51 VSD IS = 4.5 A, VGS = 0 V 0.8 1.2 105 160 Ω 0.0083 S V b Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg VDS = 30 V, VGS = 10 V, ID = 19.3 A 40 21 f = 1 MHz 0.5 td(on) Turn-On Delay Time VDD = 30 V, RL = 30 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC IF = 4.5 A, dI/dt = 100 A/µs 1.0 1.5 45 70 15 25 90 135 40 60 46 70 Ω ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 60 VGS = 10 V thru 6 V 50 40 I D - Drain Current (A) I D - Drain Current (A) 50 30 20 10 www.vishay.com 2 30 20 TC = 125 °C 10 5V 0 0.0 40 25 °C - 55 °C 0 0.4 0.8 1.2 1.6 2.0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 5 6 Document Number: 72972 S09-0273-Rev. D, 16-Feb-09 Si7452DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10000 0.008 Ciss 8000 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.010 VGS = 10 V 0.006 0.004 0.002 6000 4000 Crss 2000 Coss 0.000 0 0 10 20 30 40 50 60 0 20 30 40 50 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 60 1.8 10 VDS = 30 V ID = 19.3 A 8 VGS = 10 V ID = 19.3 A 1.6 RDS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 10 6 4 2 1.4 1.2 1.0 0.8 0.6 - 50 0 0 20 40 60 80 100 120 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) On-Resistance vs. Junction Temperature Gate Charge 0.040 60 RDS(on) - On-Resistance (Ω) I S - Source Current (A) 0.035 TJ = 150 °C 10 TJ = 25 °C 0.030 0.025 ID = 19.3 A 0.020 0.015 0.010 0.005 0.000 1 0.0 0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 72972 S09-0273-Rev. D, 16-Feb-09 2 4 6 8 10 1.2 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si7452DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 100 0.4 ID = 250 μA 80 - 0.0 Power (W) V GS(th) Variance (V) 0.2 - 0.2 - 0.4 - 0.6 60 40 - 0.8 - 1.0 20 - 1.2 - 1.4 - 50 0 - 25 0 25 50 75 100 125 150 1 0.1 0.01 TJ - Temperature ( ˚C) 10 100 600 Time (s) Single Pulse Power, Junction-to-Ambient Threshold Voltage IDM Limited 100 Limited by RDS(on)* I D - Drain Current (A) 10 P(t) = 0.001 P(t) = 0.01 ID(on) Limited 1 P(t) = 0.1 P(t) = 1 TA = 25°C Single Pulse 0.1 P(t) = 10 DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 52 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72972 S09-0273-Rev. D, 16-Feb-09 Si7452DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 Square Wave Pulse Duration (s) 10- 1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72972. Document Number: 72972 S09-0273-Rev. 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