Si7454CDP
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
a
RDS(on) (Ω)
100
ID (A)
0.0305 at VGS = 10 V
22
0.033 at VGS = 7.5 V
21
0.043 at VGS = 4.5 V
18.5
Qg (Typ.)
9.5 nC
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
PowerPAK® SO-8
APPLICATIONS
S
6.15 mm
• DC/DC Primary Side Switch
• Telecom/Server 48 V, Full/Half-Bridge dc-to-dc
D
• Industrial
5.15 mm
1
S
2
S
3
G
4
D
8
D
7
D
6
G
D
5
Bottom View
S
Ordering Information: Si7454CDP-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Limit
100
Gate-Source Voltage
VGS
± 20
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
17.6
ID
8.1b, c
6.5b, c
40
IDM
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 70 °C
TA = 25 °C
IAS
3.7b, c
15
EAS
11.2
mJ
29.7
19
PD
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
A
22
IS
TC = 25 °C
Maximum Power Dissipation
V
22
TA = 70 °C
Pulsed Drain Current
Unit
W
4.1b, c
2.6b, c
- 55 to 150
Soldering Recommendations (Peak Temperature)d, e
260
°C
THERMAL RESISTANCE RATINGS
Parameter
b, f
t ≤ 10 s
Steady State
Symbol
RthJA
Typical
24
3.3
Maximum
30
4.2
Unit
Maximum Junction-to-Ambient
°C/W
RthJC
Maximum Junction-to-Case (Drain)
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
Document Number: 65940
S10-0784-Rev. A, 05-Apr-10
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si7454CDP
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
100
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
ΔVDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
V
47
mV/°C
- 5.4
1.2
2.8
V
± 100
nA
VDS = 100 V, VGS = 0 V
1
VDS = 100 V, VGS = 0 V, TJ = 55 °C
10
VDS ≥ 5 V, VGS = 10 V
20
µA
A
VGS = 10 V, ID = 10 A
0.0252
0.0305
RDS(on)
VGS = 7.5 V, ID = 8 A
0.027
0.033
VGS = 4.5 V, ID = 6 A
0.0345
0.043
gfs
VDS = 10 V, ID = 10 A
20
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Rg
Gate Resistance
580
VDS = 50 V, VGS = 0 V, f = 1 MHz
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
VDS = 50 V, VGS = 10 V, ID = 10 A
12.8
VDS = 50 V, VGS = 7.5 V, ID = 10 A
9.8
15
6.3
9.5
nC
3.8
7.6
Ω
8
16
12
24
VDS = 50 V, VGS = 4.5 V, ID = 10 A
1.8
2.9
f = 1 MHz
VDD = 50 V, RL = 5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
0.8
16
32
10
20
td(on)
10
20
12
24
17
34
10
20
td(off)
VDD = 50 V, RL = 5 Ω
ID ≅ 10 A, VGEN = 7.5 V, Rg = 1 Ω
tf
Fall Time
19.5
tf
tr
Rise Time
Turn-Off Delay Time
pF
24
td(on)
Turn-On Delay Time
347
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
a
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
22
40
IS = 4 A
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.78
1.2
V
31
62
ns
28
56
nC
15
16
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 65940
S10-0784-Rev. A, 05-Apr-10
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si7454CDP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
50
V GS = 10 V thru 5 V
8
I D - Drain Current (A)
I D - Drain Current (A)
40
30
V GS = 4 V
20
6
4
T C = 25 °C
2
10
T C = 125 °C
V GS = 3 V
T C = - 55 °C
0
0
0
1
2
3
4
0
5
1
V DS - Drain-to-Source Voltage (V)
1000
0.048
800
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
4
5
Transfer Characteristics
0.060
V GS = 4.5 V
V GS = 7.5 V
0.024
3
V GS - Gate-to-Source Voltage (V)
Output Characteristics
0.036
2
V GS = 10 V
0.012
Ciss
600
400
Coss
200
Crss
0.000
0
0
8
16
24
32
40
0
20
ID - Drain Current (A)
40
100
Capacitance
10
2.0
R DS(on) - On-Resistance (Normalized)
ID = 10 A
VGS - Gate-to-Source Voltage (V)
80
V DS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
8
V DS = 25 V
6
V DS = 50 V
V DS = 75 V
4
2
0
0.0
60
2.7
5.4
8.1
10.8
13.5
ID = 10 A
1.7
V GS = 10 V
1.4
V GS = 4.5 V
1.1
0.8
0.5
- 50
- 25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
T J - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 65940
S10-0784-Rev. A, 05-Apr-10
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si7454CDP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.15
10
0.12
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 10 A
T J = 150 °C
1
T J = 25 °C
0.1
0.01
0.09
0.06
T J = 125 °C
0.03
T J = 25 °C
0.00
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
Source-Drain Diode Forward Voltage
3
4
5
6
7
8
9
10
On-Resistance vs. Gate-to-Source Voltage
0.4
150
0.2
120
0
- 0.2
ID = 5 mA
Power (W)
VGS(th) Variance (V)
2
V GS - Gate-to-Source Voltage (V)
V SD - Source-to-Drain Voltage (V)
90
60
- 0.4
ID = 250 μA
30
- 0.6
- 0.8
- 50
- 25
0
25
50
75
100
125
150
0
0 .001
0.01
0.1
1
10
Time (s)
T J - Temperature (°C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by R DS(on)*
I D - Drain Current (A)
10
1 ms
1
10 ms
100 ms
0.1
1s
10 s
TA = 25 °C
Single Pulse
BVDSS Limited
DC
0.01
0.01
0.1
1
10
100
V DS - Drain-to-Source Voltage (V)
* V GS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 65940
S10-0784-Rev. A, 05-Apr-10
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si7454CDP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
25
I D - Drain Current (A)
20
15
10
5
0
0
25
50
75
100
125
150
0
25
T C - Case Temperature (°C)
40
2.20
32
1.76
24
1.32
Power (W)
Power (W)
Current Derating*
16
8
0.88
0.44
0
0.00
0
25
50
75
100
125
150
50
75
100
125
T C - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65940
S10-0784-Rev. A, 05-Apr-10
www.vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si7454CDP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 70 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65940.
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Document Number: 65940
S10-0784-Rev. A, 05-Apr-10
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Revision: 01-Jan-2022
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Document Number: 91000
