SI7501DN-T1-E3

Si7501DN Vishay Siliconix Complementary 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) P-Channel RDS(on) (Ω) - 30 N-Channel 30 • • • • ID (A) 0.051 at VGS = - 10 V - 6.4 0.075 at VGS = - 6 V - 5.3 0.035 at VGS = 10 V 7.7 0.050 at VGS = 4.5 V 6.5 Halogen-free Option Available TrenchFET® Power MOSFET New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile RoHS COMPLIANT APPLICATIONS • Backlight Inverter • DC/DC Converter - 4 Cell Battery PowerPAK 1212-8 S1 3.30 mm S1 3.30 mm 1 G1 2 G1 S2 3 G2 4 D D 8 D 7 D 6 G2 D 5 Bottom View S2 Ordering Information: Si7501DN-T1-E3 (Lead (Pb)-free) Si7501DN-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted P-Channel Parameter Symbol 10 s N-Channel Steady State 10 s Steady State Drain-Source Voltage VDS - 30 30 Gate-Source Voltage VGS ± 25 ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a IS TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak - 6.4 - 4.5 7.7 - 5.1 - 3.6 4.7 IDM Pulsed Drain Current Maximum Power Dissipationa ID PD V 5.4 4.3 25 - 25 - 2.6 - 1.3 2.6 1.3 3.1 1.6 3.1 1.6 3 1.0 2 1.0 TJ, Tstg - 55 to 150 Temperature)b, c Unit A W °C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Case) Symbol t ≤ 10 s Steady State Steady State RthJA RthJC Typical Maximum 32 40 65 81 5 6.3 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 72173 S-81544-Rev. D, 07-Jul-08 www.vishay.com 1 Si7501DN Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VDS = VGS, ID = - 250 µA P-Ch - 1.0 -3 VDS = VGS, ID = 250 µA N-Ch 1.0 3 VDS = 0 V, VGS = ± 25 V P-Ch ± 200 VDS = 0 V, VGS = ± 20 V N-Ch ± 100 VDS = - 30 V, VGS = 0 V P-Ch -1 VDS = 30 V, VGS = 0 V N-Ch 1 VDS = - 30 V, VGS = 0 V, TJ = 55 °C P-Ch -5 VDS = 30 V, VGS = 0 V, TJ = 55 °C N-Ch VDS ≥ - 5 V, VGS = - 10 V P-Ch - 25 VDS ≤ 5 V, VGS = 10 V N-Ch 25 VGS(th) IGSS IDSS ID(on) RDS(on) µA A VGS = - 10 V, ID = - 6.4 A P-Ch 0.041 0.051 VGS = 10 V, ID = 7.7 A N-Ch 0.028 0.035 VGS = - 6 V, ID = - 5.3 A P-Ch 0.055 0.075 VGS = 4.5 V, ID = 6.5 A 0.050 N-Ch 0.040 P-Ch 13 VDS = 15 V, ID = 7.7 A N-Ch 15 IS = - 1.7 A, VGS = 0 V P-Ch - 0.80 - 1.2 IS = 1.7 A, VGS = 0 V N-Ch 0.80 1.2 P-Ch 12.5 19 P-Channel VDS = - 15 V, VGS = - 10 V, ID = - 6.4 A N-Ch 9 14 P-Ch 2.5 N-Channel VDS = 15 V, VGS = 10 V, ID = 7.7 A N-Ch 2 P-Ch 3.6 N-Ch 1.3 VSD nA 5 VDS = - 15 V, ID = - 6.4 A gfs V Ω S V Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf P-Channel VDD = - 15 V, RL = 5 Ω ID ≅ - 3 A, VGEN = - 10 V, RG = 1 Ω N-Channel VDD = 15 V, RL = 5 Ω ID ≅ 3 A, VGEN = 10 V, RG = 1 Ω trr P-Ch 9 N-Ch 3 nC Ω P-Ch 10 N-Ch 10 15 15 P-Ch 20 30 N-Ch 15 25 P-Ch 25 40 N-Ch 20 30 P-Ch 30 45 N-Ch 10 15 IF = - 1.7 A, dI/dt = 100 A/µs P-Ch 25 50 IF = 1.7 A, dI/dt = 100 A/µs N-Ch 20 40 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72173 S-81544-Rev. D, 07-Jul-08 Si7501DN Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 25 25 VGS = 10 thru 6 V 25 °C 20 ID - Drain Current (A) 20 ID - Drain Current (A) TC = - 55 °C 5V 15 10 4V 15 125 °C 10 5 5 3V 0 0 0 1 2 3 4 0 5 1 2 Output Characteristics 4 5 6 Transfer Characteristics 0.16 1000 800 0.12 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 3 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 0.08 VGS = 6 V VGS = 10 V Ciss 600 400 0.04 Coss 200 Crss 0.00 0 0 5 10 15 20 25 0 6 ID - Drain Current (A) 12 24 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.6 10 VGS = 10 V ID = 6.4 A VDS = 15 V ID = 6.4 A 1.4 8 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 18 6 4 1.2 1.0 0.8 2 0 0 3 6 9 Qg - Total Gate Charge (nC) Gate Charge Document Number: 72173 S-81544-Rev. D, 07-Jul-08 12 15 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si7501DN Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.16 30 RDS(on) - On-Resistance (Ω) IS - Source Current (A) TJ = 150 °C 10 TJ = 25 °C 1 0.0 0.12 ID = 6.4 A 0.08 0.04 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 2 6 8 10 On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.6 50 0.4 40 ID = 250 µA 0.2 Power (W) VGS(th) Variance (V) 4 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) 0.0 - 0.2 - 0.4 - 50 30 20 10 - 25 0 25 50 75 100 125 0 10 -3 150 10 -2 10 -1 TJ - Temperature (°C) 1 10 100 600 Time (s) Threshold Voltage Single Pulse Power 100 Limited by RDS(on)* IDM Limited P(t) = 0.0001 ID - Drain Current (A) 10 P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 P(t) = 1 P(t) = 10 TA = 25 °C Single Pulse 0.1 DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage * VGS > minimum V GS at which RDS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 72173 S-81544-Rev. D, 07-Jul-08 Si7501DN Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 65 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 - 4 10 - 3 10 - 2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Single Pulse 0.02 0.01 10 -4 10 -3 10 - 2 Square Wave Pulse Duration (s) 10 -1 1 Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 72173 S-81544-Rev. D, 07-Jul-08 www.vishay.com 5 Si7501DN Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 30 VGS = 10 thru 5 V 25 ID - Drain Current (A) ID - Drain Current (A) 25 20 4V 15 10 20 15 10 TC = 125 °C 5 5 25 °C - 55 °C 3V 0 0 0 1 2 3 4 0 5 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.10 5 6 25 30 800 0.08 Ciss 600 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 1 0.06 VGS = 4.5 V VGS = 10 V 0.04 400 200 Coss 0.02 Crss 0.00 0 0 5 10 15 20 25 30 0 5 ID - Drain Current (A) 10 20 VDS - Drain-to-Source Voltage (V) Capacitance On-Resistance vs. Drain Current 1.6 10 VGS = 10 V ID = 7.7 A VDS = 15 V ID = 7.7 A 1.4 8 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 15 6 4 1.2 1.0 0.8 2 0 0 2 4 6 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 6 8 10 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 72173 S-81544-Rev. D, 07-Jul-08 Si7501DN Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.16 30 RDS(on) - On-Resistance (Ω) IS - Source Current (A) TJ = 150 °C 10 TJ = 25 °C 1 0.0 0.12 0.08 ID = 7.7 A 0.04 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 6 8 10 On-Resistance vs. Gate-to-Source Voltage 0.4 50 0.2 40 ID = 250 µA 0.0 Power (W) VGS(th) Variance (V) 4 VGS - Gate-to-Source Voltage (V) - 0.2 30 20 - 0.4 10 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 0 10 - 3 150 10 -2 10 -1 TJ - Temperature (°C) 1 10 100 600 Time (s) Threshold Voltage Single Pulse Power 100 IDM Limited Limited by RDS(on)* P(t) = 0.0001 ID - Drain Current (A) 10 P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 0.1 P(t) = 1 P(t) = 10 TA = 25 °C Single Pulse DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Document Number: 72173 S-81544-Rev. D, 07-Jul-08 www.vishay.com 7 Si7501DN Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 65 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 - 2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10 -4 10 -3 10 - 2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72173. www.vishay.com 8 Document Number: 72173 S-81544-Rev. D, 07-Jul-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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