SI7530DP-T1-E3

Si7530DP Vishay Siliconix N- and P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Ch P-Ch 60 - 60 RDS(on) (Ω) ID (A) 0.075 at VGS = 10 V 4.6 0.100 at VGS = 4.5 V 4.0 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile • 100 % Rg Tested Qg (Typ.) 12 nC 0.064 at VGS = - 10 V - 5.0 0.080 at VGS = - 4.5 V - 4.5 47 PowerPAK SO-8 D1 S1 6.15 mm S2 5.15 mm 1 G1 2 S2 3 G2 G2 4 G1 D1 8 D1 7 D2 6 D2 5 S1 D2 N-Channel MOSFET P-Channel MOSFET Bottom View Ordering Information: Si7530DP-T1-E3 (Lead (Pb)-free) Si7530DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a TA = 25°C TA = 70°C Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Pulse Avalanche Current L = 0.1 mH Single Pulse Repetitive Avalanche Energyb TA = 25°C Maximum Power Dissipationa TA = 70°C Operating Junction and Storage Temperature Range ID IDM IS IAS EAS PD TJ, Tstg Soldering Recommendations (Peak Temperature)c, d N-Channel Steady 10 s 60 P-Channel Steady 10 s - 60 ± 20 4.6 3.6 3.0 2.4 - 5.0 - 4.0 1.2 - 2.9 15 2.7 3.3 2.1 A - 1.2 - 22 24.2 1.4 3.5 0.9 2.2 - 55 to 150 260 V - 3.2 - 2.6 - 25 15 11 Unit mJ 1.5 0.94 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJC N-Channel Typical Maximum 29 38 60 85 4.0 5.2 P-Channel Typical Maximum 27 36 60 85 3.3 4.3 Unit °C/W Notes: a. Surface Mounted on 1” x 1” FR4 board. b. Duty Cycle ≤ 1 %. c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 73249 S09-0223-Rev. D, 09-Feb-09 www.vishay.com 1 Si7530DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) N-Ch 1 3 P-Ch -1 -3 VDS = 0 V, VGS = ± 20 V IGSS IDSS VDS = VGS, ID = 250 µA VDS = VGS, ID = - 250 µA N-Ch ± 100 P-Ch ± 100 VDS = 60 V, VGS = 0 V N-Ch 1 VDS = - 60 V, VGS = 0 V P-Ch -1 VDS = 60 V, VGS = 0 V, TJ = 55°C N-Ch 5 VDS = - 60 V, VGS = 0 V, TJ = 55°C P-Ch VDS ≥ 5 V, VGS = 10 V N-Ch 15 VDS ≤ - 5 V, VGS = - 10 V P-Ch - 25 ID(on) RDS(on) gfs VSD V nA µA -5 A VGS = 10 V, ID = 4.6 A N-Ch 0.060 0.075 VGS = - 10 V, ID = - 5.0 A P-Ch 0.051 0.064 VGS = 4.5 V, ID = 4.0 A N-Ch 0.080 0.100 VGS = - 4.5 V, ID = - 4.5 A P-Ch 0.064 0.080 VDS = 15 V, ID = 4.6 A N-Ch 6 VDS = - 15 V, ID = - 5.0 A P-Ch 16 IS = 2.7 A, VGS = 0 V N-Ch 0.85 1.2 IS = - 2.9 A, VGS = 0 V P-Ch - 0.85 - 1.2 N-Ch 12 20 P-Ch 26 40 N-Ch 2 P-Ch 4.5 N-Ch 3.5 Ω S V Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Reverse Recovery Energy Qg N-Channel VDS = 30 V, VGS = 10 V, ID = 15 A Qgs Qgd P-Channel VDS = - 30 V, VGS = - 10 V, ID = - 5.0 A P-Ch Rg f = 1.0 MHz td(on) N-Channel VDD = 30 V, RL = 30 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω tr td(off) tf trr Qrr P-Channel VDD = - 30 V, RL = 30 Ω ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω IF = 2.7 A, dI/dt = 100 A/µs nC 7 N-Ch 0.6 1.5 2.5 P-Ch 3.5 7 11 N-Ch 7 15 P-Ch 8 15 N-Ch 8 15 P-Ch 9 15 N-Ch 15 25 P-Ch 65 100 N-Ch 7 20 P-Ch 30 45 N-Ch 30 60 IF = - 5 A, dI/dt = 100 A/µs P-Ch 40 80 IF = 2.7 A, dI/dt = 100 A/µs N-Ch 33 66 IF = - 5 A, dI/dt = 100 A/µs P-Ch 57 115 Ω ns pC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73249 S09-0223-Rev. D, 09-Feb-09 Si7530DP Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 15 15 VGS = 10 V thru 4 V 12 ID - Drain Current (A) ID - Drain Current (A) 12 9 6 3V 3 9 6 TC = 125 °C 3 25 °C - 55 °C 0 0 1 2 3 4 0 0.0 5 0.5 1.0 VDS - Drain-to-Source Voltage (V) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 800 0.12 600 VGS = 4.5 V C - Capacitance (pF) R DS(on) - On-Resistance ( Ω) 700 0.10 0.08 VGS = 10 V 0.06 0.04 Ciss 500 400 300 Coss 200 0.02 Crss 100 0 0.00 0 3 6 9 12 0 15 4 8 16 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 20 2.2 VDS = 30 V ID = 15 A 2.0 16 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 12 12 8 4 VGS = 10 V ID = 10 A 1.8 1.6 1.4 1.2 1.0 0.8 0 0.6 0 4 8 12 16 20 24 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 73249 S09-0223-Rev. D, 09-Feb-09 150 www.vishay.com 3 Si7530DP Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 0.200 R DS(on) - On-Resistance (Ω) IS - Source Current (A) 0.175 TJ = 150 °C 10 TJ = 25 °C 0.150 0.125 ID = 4.6 A 0.100 0.075 0.050 0.025 1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 0 1.2 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.6 100 0.4 80 ID = 250 µA TA = 25 °C Single Pulse 0.0 Power (W) V GS(th) (V) 0.2 - 0.2 60 40 - 0.4 - 0.6 20 - 0.8 - 1.0 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) 0.1 1 10 Time (s) Threshold Voltage Single Pulse Power 100 ID - Drain Current (A) Limited by IDM 10 µs 10 Limited by RDS(on)* 100 µs 1 ms 1 10 ms 0.1 ID(on) Limited 100 ms TA = 25 °C Single Pulse 1s BVDSS Limited 0.01 0.1 1 10 s 100 s DC 10 100 VDS - Drain-to-Source Voltage (V) * V GS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Case www.vishay.com 4 Document Number: 73249 S09-0223-Rev. D, 09-Feb-09 Si7530DP Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 60 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 0 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 73249 S09-0223-Rev. D, 09-Feb-09 www.vishay.com 5 Si7530DP Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 30 VGS = 10 V thru 5 V ID - Drain Current (A) ID - Drain Current (A) 25 4V 25 20 15 10 15 10 TC = 125 °C 3V 5 20 5 25 °C - 55 °C 0 0.0 0 0 2 4 6 8 10 0.5 1.0 0.12 1800 0.10 1500 VGS = 4.5 V VGS = 10 V 0.04 0 15 20 25 4.5 Coss Crss 0 30 10 20 30 40 50 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 60 2.2 20 2.0 VDS = 30 V ID = 5 A 16 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 4.0 600 0.00 10 3.5 900 300 5 3.0 Ciss 1200 0.02 0 2.5 Transfer Characteristics C - Capacitance (pF) R DS(on) - On-Resistance (Ω) Output Characteristics 0.06 2.0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 0.08 1.5 12 8 4 1.8 VGS = 10 V ID = 5 A 1.6 1.4 1.2 1.0 0.8 0.6 0 0 10 20 30 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 6 40 50 0 .4 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 73249 S09-0223-Rev. D, 09-Feb-09 Si7530DP Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.30 40 R DS(on) - On-Resistance ( Ω ) IS - Source Current (A) 0.25 TJ = 150 °C 10 TJ = 25 °C ID = 5 A 0.20 0.15 0.10 0.05 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 2 0 1.2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.0 10 100 ID = 250 µA 0.8 80 Power (W) V GS(th) (V) 0.6 0.4 0.2 60 40 0.0 20 - 0.2 - 0.4 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 10 100 ID - Drain Current (A) 10 Limited by RDS(on)* 10 µs 100 µs 1 ms 1 10 ms 100 ms 0.1 1s 10 s 0.01 TA = 25 °C Single Pulse 100 s, DC 0.001 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which R DS(on) is specified Safe Operating Area Document Number: 73249 S09-0223-Rev. D, 09-Feb-09 www.vishay.com 7 Si7530DP Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 52 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73249. www.vishay.com 8 Document Number: 73249 S09-0223-Rev. D, 09-Feb-09 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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