SI7615DN-T1-GE3

SPICE Device Model Si7615DN www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C to + 125 °C temperature ranges under the pulsed 0 V to 10 V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device. • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to + 125 °C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics SUBCIRCUIT MODEL SCHEMATIC D CGD R1 3 M2 Gy G RG Gx + – ETCV CGS DBD M1 S Note • This document is intended as a SPICE modeling guideline and does not constitute a commercial product datasheet. Designers should refer to the appropriate datasheet of the same number for guaranteed specification limits. S12-2998-Rev. B, 10-Dec-12 1 Document Number: 64900 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SPICE Device Model Si7615DN www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SIMULATED MEASURED DATA DATA SYMBOL TEST CONDITIONS Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 μA 0.80 Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 20 A 0.0034 0.0031 VGS = - 4.5 V, ID = - 15 A 0.0047 0.0043 UNIT Static - V  Forward Transconductancea gfs VDS = - 10 V, ID = - 20 A 57 70 S Diode Forward Voltagea VSD IS = - 4 A - 0.69 - 0.68 V 6060 6000 766 780 412 820 107 122 54 62 9.4 9.4 17.2 17.2 Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = - 10 V, VGS = 0 V, f = 1 MHz VDS = - 10 V, VGS = - 10 V, ID = - 10 A VDS = - 10 V, VGS = - 4.5 V, ID = - 10 A pF nC Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. S12-2998-Rev. B, 10-Dec-12 2 Document Number: 64900 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SPICE Device Model Si7615DN www.vishay.com Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ = 25 °C, unless otherwise noted) 80 10 TJ = 125 °C 8 ID - Drain Current (A) ID - Drain Current (A) 64 VGS = 10 V, 6 V, 5 V, 4 V, 3 V 48 32 TJ = - 55 °C 6 4 TJ = 25 °C VGS = 2 V 16 2 0 0.0 0.5 1.0 1.5 2.0 0 0.0 2.5 0.6 1.2 1.8 2.4 3.0 VGS - Gate-to-Source Voltage (V) 0.020 8500 0.016 6800 Capacitance (pF) RDS(on) - On-Resistance (Ω) VDS - Drain-to-Source Voltage (V) 0.012 0.008 Ciss 5100 3400 VGS = 4.5 V 1700 0.004 Coss VGS = 10 V Crss 0.000 0 0 16 32 48 64 80 0 5 ID - Drain Current (A) 10 15 20 VDS - Drain-to-Source Voltage (V) 10 100 TJ = 150 °C 10 VDS = 15 V IS - Source Current (A) VGS - Gate-to-Source Voltage (V) ID = 10 A 8 6 VDS = 20 V 4 2 TJ = 25 °C 1 0.1 0.01 0 0.001 0 25 50 75 100 0 125 Qg - Total Gate Charge (nC) 0.2 0.4 0.6 0.8 1 1.2 VSD - Source-to-Drain Voltage (V) Note • Dots and squares represent measured data. S12-2998-Rev. B, 10-Dec-12 3 Document Number: 64900 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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