Si7620DN
Vishay Siliconix
N-Channel 150-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)a
Qg (Typ.)
150
0.126 at VGS = 10 V
13
9.5 nC
•
•
•
•
Halogen-free
TrenchFET® Power MOSFET
100 % Rg Tested
100 % UIS Tested
RoHS
COMPLIANT
APPLICATIONS
PowerPAK® 1212-8
• Primary Side Switch
S
3.30 mm
3.30 mm
1
D
S
2
S
3
G
4
D
8
D
G
7
D
6
D
5
S
Bottom View
N-Channel MOSFET
Ordering Information: Si7620DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
L = 0.1 mH
TC = 25 °C
Continuous Source-Drain Diode Current
TA = 25 °C
TC = 25 °C
TC = 70 °C
Maximum Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
Limit
150
± 20
13
10.7
3.6b, c
2.9b, c
15
10
5
13
3.2b, c
5.2
33
3.8b, c
2b, c
- 55 to 150
260
ID
IDM
IAS
EAS
IS
PD
TJ, Tstg
Unit
V
A
mJ
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Symbol
RthJA
RthJC
Typical
24
1.9
Maximum
33
2.4
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 81 °C/W.
Document Number: 68702
S-81215-Rev. A, 02-Jun-08
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1
Si7620DN
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
150
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 µA
VGS(th)
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State
Resistancea
Forward Transconductancea
V
180
mV/°C
-9
2.5
4.5
V
± 100
nA
VDS = 150 V, VGS = 0 V
1
VDS = 150 V, VGS = 0 V, TJ = 55 °C
5
VDS ≥ 5 V, VGS = 10 V
13
µA
A
RDS(on)
VGS = 10 V, ID = 3.6 A
0.103
gfs
VDS = 15 V, ID = 3.6 A
10
0.126
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
600
VDS = 75 V, VGS = 0 V, f = 1 MHz
50
Reverse Transfer Capacitance
Crss
15
Total Gate Charge
Qg
9.5
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VDS = 75 V, VGS = 10 V, ID = 3.6 A
td(off)
15
3
nC
2.5
f = 1 MHz
td(on)
tr
pF
VDD = 75 V, RL = 26 Ω
ID ≅ 2.9 A, VGEN = 10 V, Rg = 1 Ω
tf
1.1
2.2
12
20
5
10
15
25
5
10
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
13
15
IS = 2.9 A, VGS = 0 V
IF = 2.9 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.8
1.2
V
50
75
ns
125
190
nC
37
13
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 68702
S-81215-Rev. A, 02-Jun-08
Si7620DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
15
5
VGS = 10 thru 7 V
4
VGS = 6 V
I D - Drain Current (A)
I D - Drain Current (A)
12
9
6
3
3
TC = 25 °C
2
1
VGS = 5 V
TC = 125 °C
VGS = 4 V
0
0.0
TC = - 55 °C
0
0.5
1.0
1.5
2.0
2.5
3.0
2
3
VDS - Drain-to-Source Voltage (V)
5
6
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
800
0.14
0.13
Ciss
600
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
4
0.12
0.11
VGS = 10 V
0.10
400
200
0.09
Coss
Crss
0.08
0
0
3
6
9
12
0
15
20
30
40
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
50
2.4
10
ID = 3.6 A
ID = 3.6 A
2.0
VDS = 75 V
6
VDS = 125 V
4
(Normalized)
8
RDS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
10
VGS = 10 V
1.6
1.2
0.8
2
0
0
2
4
6
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 68702
S-81215-Rev. A, 02-Jun-08
8
10
0.4
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si7620DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.40
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 3.6 A
10
TJ = 25 °C
TJ = 150 °C
0.24
TJ = 125 °C
0.16
TJ = 25 °C
0.08
0.00
1
0
0.2
0.4
0.6
0.8
1.0
0
1.2
4
6
8
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
4.2
50
3.8
40
3.4
30
ID = 250 µA
3.0
2.6
2.2
- 50
2
Source-Drain Diode Forward Voltage
Power (W)
VGS(th) (V)
0.32
10
20
10
0
- 25
0
25
50
75
100
125
150
0.01
0.1
1
10
100
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power (Junction-to-Ambient)
600
100
BVDSS
Limited
Limited by RDS(on)*
I D - Drain Current (A)
10
100 µs
1
1 ms
10 ms
100 ms
0.1
1s
10 s
TA = 25 °C
Single Pulse
0.01
0.1
DC
1
10
100
1000
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 68702
S-81215-Rev. A, 02-Jun-08
Si7620DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
16
50
40
Power (W)
I D - Drain Current (A)
12
8
30
20
4
10
0
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68702
S-81215-Rev. A, 02-Jun-08
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5
Si7620DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 65 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68702.
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Document Number: 68702
S-81215-Rev. A, 02-Jun-08
Legal Disclaimer Notice
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Vishay
Disclaimer
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Revision: 01-Jan-2022
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Document Number: 91000
