SI7664DP-T1-E3

Si7664DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0031 at VGS = 10 V 40 0.0036 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 37 nC PowerPAK SO-8 • • • • Halogen-free available TrenchFET® Power MOSFET RoHS COMPLIANT PWM Optimized New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile • 100 % Rg, Capacitance and UIS Tested APPLICATIONS S 6.15 mm 5.15 mm 1 • Synchronous - Low Side - Notebook - Server - Workstation S 2 S 3 G 4 D 8 D D 7 G D 6 D 5 Bottom View S Ordering Information: Si7664DP-T1-E3 (Lead (Pb)-free) Si7664DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IDM Pulsed Drain Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Continuous Source-Drain Diode Current Limit 30 ± 12 40 32 TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Unit V 31b, c 25b, c 70 40 A 4.9b, c 40 80 83 53 mJ 5.4b, c 3.4b, c - 55 to 150 260 W °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientb, f Maximum Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Symbol RthJA RthJC Typical 18 1.0 Maximum 23 1.5 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile ( http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 65 °C/W. Document Number: 73566 S-80438-Rev. B, 03-Mar-08 www.vishay.com 1 Si7664DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea gfs mV/°C 5.0 0.6 1.8 V ± 100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 5 V, VGS = 10 V RDS(on) V 35 30 µA A VGS = 10 V, ID = 20 A 0.0025 0.0031 VGS = 4.5 V, ID = 20 A 0.0029 0.0036 VDS = 15 V, ID = 20 A 108 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time 1320 305 458 85 125 38 55 f = 1 MHz 0.95 1.5 14 21 100 150 45 70 tf 8 15 td(on) 28 45 103 155 41 65 9 15 VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω tr td(off) VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω tr td(off) Fall Time pF nC 5.5 td(on) Rise Time Turn-Off Delay Time 7770 880 10.5 Fall Time Turn-On Delay Time VDS = 15 V, VGS = 10 V, ID = 20 A 5180 VDS = 15 V, VGS = 4.5 V, ID = 20 A Rise Time Turn-Off Delay Time VDS = 15 V, VGS = 0 V, f = 1 MHz tf Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current TC = 25 °C IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD 40 A 70 IS = 5 A 0.73 1.1 V Body Diode Reverse Recovery Time trr 35 55 ns Body Diode Reverse Recovery Charge Qrr 35 55 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C 18 17 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73566 S-80438-Rev. B, 03-Mar-08 Si7664DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 2.0 VGS = 10 thru 3 V 1.6 I D - Drain Current (A) I D - Drain Current (A) 50 40 30 20 2V 1.2 0.8 25 °C 0.4 10 TC = 125 °C - 55 °C 0 0.0 0.5 1.0 1.5 2.0 0.0 0.0 2.5 0.5 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 6000 0.0035 4800 0.0032 C - Capacitance (pF) R DS(on) - On-Resistance (mΩ) Ciss VGS = 4.5 V 0.0029 0.0026 VGS = 10 V 3600 2400 Coss 1200 0.0023 Crss 0 0.0020 0 10 20 30 40 0 50 12 18 24 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 30 1.8 VDS = 15 V 1.6 8 ID = 20 A VGS = 4.5 V 6 R DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source V oltage (V) 6 VDS = 10 V 4 VDS = 20 V 2 1.4 1.2 VGS = 10 V 1.0 0.8 0 0 17 34 51 Qg - Total Gate Charge (nC) Gate Charge Document Number: 73566 S-80438-Rev. B, 03-Mar-08 68 85 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si7664DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.020 R DS(on) - Drain-to-Source On-Resistance (Ω) 100 TJ = 150 °C I S - Source Current (A) 10 1 TJ = 25 °C 0.1 0.01 0.001 0.0 0.016 0.012 0.008 TJ = 125 °C 0.004 TJ = 25 °C 0.000 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 VSD - Source-to-Drain Voltage (V) 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 200 0.4 0.2 160 0.0 Power (W) VGS(th) Variance (V) 3 ID = 5 mA - 0.2 120 80 - 0.4 - 0.6 - 0.8 - 50 40 ID = 250 µA - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 10 100 Limited by RDS(on)* 1 ms I D - Drain Current (A) 10 10 ms 100 ms 1 1s 10 s 0.1 DC TA = 25 °C Single Pulse 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73566 S-80438-Rev. B, 03-Mar-08 Si7664DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 155 ID - Drain Current (A) 124 93 62 31 Limited by Package 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 100 2.5 80 2.0 60 1.5 Power (W) Power (W) Current Derating* 40 20 1.0 0.5 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 TC - Case Temperature (°C) TC - Case Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 125 150 * The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73566 S-80438-Rev. B, 03-Mar-08 www.vishay.com 5 Si7664DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 65 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73566. www.vishay.com 6 Document Number: 73566 S-80438-Rev. 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