SI7674DP-T1-E3

Si7674DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.0033 at VGS = 10 V 40 0.0046 at VGS = 4.5 V 40 Qg (Typ.) 37 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 2 • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses • 100 % Rg Tested • 100 % Capacitance Tested • 100 % Avalanche Tested • Compliant to RoHS Directive 2002/95/EC D • Core DC/DC in Notebooks S 3 G 4 D 8 D 7 G D 6 D 5 Bottom View Ordering Information: Si7674DP-T1-E3 (Lead (Pb)-free) Si7674DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IDM Pulsed Drain Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Continuous Source-Drain Diode Current TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Limit 30 ± 20 40 32 Temperature)d, e Unit V 31b, c 25b, c 70 40 A 4.9b, c 40 80 83 53 mJ 5.4b, c 3.4b, c - 55 to 150 260 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Symbol RthJA RthJC Typical 18 1.0 Maximum 23 1.5 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 65 °C/W. Document Number: 73562 S110212-Rev. C, 14-Feb-11 www.vishay.com 1 Si7674DP Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ V 33 ID = 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 3.0 V IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea VDS ≥ 5 V, VGS = 10 V RDS(on) Forward Transconductancea gfs - 6.3 1.0 30 µA A VGS = 10 V, ID = 20 A 0.0027 0.0033 VGS = 4.5 V, ID = 20 A 0.0038 0.0046 VDS = 15 V, ID = 20 A 87 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time 5910 910 1365 305 458 60 90 28 42 VDS = 15 V, VGS = 4.5 V, ID = 20 A 13.6 f = 1 MHz 0.95 VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω td(off) 1.5 16 25 98 150 32 50 tf 8 15 td(on) 34 50 210 315 VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω tr Rise Time Turn-Off Delay Time 3940 td(off) Fall Time pF nC 6.8 tr Fall Time Turn-On Delay Time VDS = 15 V, VGS = 10 V, ID = 20 A td(on) Rise Time Turn-Off Delay Time VDS = 15 V, VGS = 0 V, f = 1 MHz tf 26 40 9 15 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current TC = 25 °C IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 40 A 70 IS = 5 A IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 0.75 1.1 V 47 70 ns 50 80 nC 23 24 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73562 S110212-Rev. C, 14-Feb-11 Si7674DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2.0 60 VGS = 10 thru 4 V 1.6 I D - Drain Current (A) I D - Drain Current (A) 50 40 30 20 1.2 0.8 25 °C 0.4 10 TC = 125 °C 3V - 55 °C 0.0 0.5 1.0 1.5 2.0 0 2.5 1 2 3 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.0050 4500 0.0044 3600 C - Capacitance (pF) R DS(on) - On-Resistance (mΩ) 0 0.0 VGS = 4.5 V 0.0038 0.0032 VGS = 10 V 4 5 24 30 Ciss 2700 1800 900 0.0026 Coss Crss 0 0.0020 0 10 20 30 40 0 50 6 12 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 1.8 VDS = 15 V ID = 20 A 1.6 8 VDS = 10 V 6 VDS = 20 V 4 2 VGS = 10 V 1.4 (Normalized) R DS(on) - On-Resistance V GS - Gate-to-Source Voltage (V) 18 1.2 VGS = 4.5 V 1.0 0.8 0 0 13 26 39 Qg - Total Gate Charge (nC) Gate Charge Document Number: 73562 S110212-Rev. C, 14-Feb-11 52 65 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si7674DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.020 TJ = 150 °C 10 I S - Source Current (A) R DS(on) - Drain-to-Source On-Resistance (Ω) 100 1 TJ = 25 °C 0.1 0.01 0.001 0.0 0.016 0.012 0.008 TJ = 125 °C TJ = 25 °C 0.004 0.000 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 4 5 6 7 8 9 10 On-Resistance vs. Gate-to-Source Voltage 0.5 200 0.2 160 Power (W) VGS(th) Variance (V) Source-Drain Diode Forward Voltage - 0.1 ID = 5 mA - 0.4 3 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) - 0.7 120 80 40 ID = 250 µA - 1.0 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 10 100 Limited by RDS(on)* 1 ms I D - Drain Current (A) 10 10 ms 1 100 ms 1s 10 s 0.1 DC TA = 25 °C Single Pulse 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73562 S110212-Rev. C, 14-Feb-11 Si7674DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 155 I D - Drain Current (A) 124 93 62 Limited by Package 31 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 100 2.5 80 2.0 60 1.5 Power (W) Power (W) Current Derating* 40 20 1.0 0.5 0 0.0 0 25 50 75 100 TC - Case Temperature (°C) Power, Junction-to-Case 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73562 S110212-Rev. C, 14-Feb-11 www.vishay.com 5 Si7674DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 65 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73562. www.vishay.com 6 Document Number: 73562 S110212-Rev. 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