SI7682DP-T1-E3

Si7682DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0090 at VGS = 10 V 20 0.0130 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 11 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg Tested APPLICATIONS • High-Side DC/DC Conversion - Notebook - Server PowerPAK SO-8 S 6.15 mm 5.15 mm 1 D S 2 S 3 G 4 D 8 D 7 G D 6 D 5 Bottom View S Ordering Information: Si7682DP-T1-E3 (Lead (Pb)-free) Si7682DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Maximum Power Dissipation ID TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IS PD TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Unit V 17.5b, c 14.0b, c 50 20 IDM Pulsed Drain Current Continuous Source-Drain Diode Current Limit 30 ± 20 20 15.5 4.5b, c 27.5 17.5 5b, c 3.2b, c - 55 to 150 260 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Symbol RthJA RthJC Typical 20 3.5 Maximum 25 4.5 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 70 °C/W. Document Number: 73350 S09-0272-Rev. B, 16-Feb-09 www.vishay.com 1 Si7682DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) Gate-Source Leakage IDSS On-State Drain Currenta ID(on) Forward Transconductancea 1.4 gfs 2.5 2.2 VDS = 0 V, VGS = ± 20 V ± 100 VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 5 V, VGS = 10 V RDS(on) mV/°C 6.5 VDS = VGS, ID = 5 mA IGSS Zero Gate Voltage Drain Current Drain-Source On-State Resistancea ID = 250 µA VDS = VGS, ID = 250 µA V 35 30 V nA µA A VGS = 10 V, ID = 20 A 0.0075 0.0090 VGS = 4.5 V, ID = 9.5 A 0.0105 0.0130 VDS = 15 V, ID = 20 A 35 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time VDS = 15 V, VGS = 4.5 V, ID = 11 A 24 38 11 17 4 VDD = 15 V, RL = 1.87 Ω ID ≅ 8 A, VGEN = 4.5 V, Rg = 1 Ω 0.2 0.55 0.9 18 30 82 130 18 30 tf 10 16 td(on) 11 18 VDD = 15 V, RL = 1.87 Ω ID ≅ 8 A, VGEN = 10 V, Rg = 1 Ω tr td(off) Fall Time nC 3.1 f = 1 MHz td(off) Rise Time Turn-Off Delay Time VDS = 15 V, VGS = 10 V, ID = 11 A tr Fall Time Turn-On Delay Time pF 375 150 td(on) Rise Time Turn-Off Delay Time 1595 VDS = 15 V, VGS = 0 V, f = 1 MHz tf 55 85 23 35 8 15 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current TC = 25 °C IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 20 A 50 IS = 2.3 A IF = 9.5 A, dI/dt = 100 A/µs, TJ = 25 °C 0.76 1.1 V 30 45 ns 24 40 nC 15.5 14.5 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73350 S09-0272-Rev. B, 16-Feb-09 Si7682DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.2 50 1.0 I D - Drain Current (A) I D - Drain Current (A) 40 VGS = 10 thru 4 V 30 20 0.8 0.6 TC = 125 °C 0.4 10 0.2 3V 25 °C - 55 °C 0 0.0 0.3 0.6 0.9 1.2 0.0 1.0 1.5 1.4 1.8 2.2 2.6 3.0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.016 2000 0.014 1600 0.012 C - Capacitance (pF) R DS(on) - On-Resistance (mΩ) Ciss VGS = 4.5 V 0.010 1200 800 Coss VGS = 10 V 0.008 400 0.006 0 0 10 20 30 40 50 0 6 12 18 24 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 30 1.8 10 ID = 11 A 1.6 8 6 VDS = 15 V VDS = 20 V 4 2 ID = 12 A VGS = 10 V 1.4 (Normalized) VDS = 10 V R DS(on) - On-Resistance V GS - Gate-to-Source Voltage (V) Crss 1.2 VGS = 4.5 V 1.0 0.8 0 0 5 10 15 20 25 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 73350 S09-0272-Rev. B, 16-Feb-09 150 www.vishay.com 3 Si7682DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.05 R DS(on) - Drain-to-Source On-Resistance (Ω) 40 10 I S - Source Current (A) TJ = 150 °C 1 0.1 TJ = 25 °C 0.01 ID = 11 A 0.04 0.03 0.02 TJ = 125 °C 0.01 TJ = 25 °C 0.00 0.001 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 200 0.2 160 ID = 250 µA Power (W) VGS(th) (V) 0.0 - 0.2 120 80 - 0.4 40 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 10 Time (s) TJ - Temperature (°C) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by R DS(on)* 1 ms I D - Drain Current (A) 10 10 ms 1 100 ms 1s 10 s 0.1 TA = 25 °C Single Pulse 0.01 0.1 dc 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73350 S09-0272-Rev. B, 16-Feb-09 Si7682DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 ID - Drain Current (A) 40 30 20 Package Limited 10 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 35 2.5 30 2.0 Power (W) Power (W) 25 20 15 1.5 1.0 10 0.5 5 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Foot Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73350 S09-0272-Rev. B, 16-Feb-09 www.vishay.com 5 Si7682DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 70 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73350. www.vishay.com 6 Document Number: 73350 S09-0272-Rev. 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