Si7703EDN
Vishay Siliconix
Single P-Channel 20 V (D-S) MOSFET With Schottky Diode
FEATURES
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) ()
ID (A)
0.048 at VGS = - 4.5 V
- 6.3
0.068 at VGS = - 2.5 V
- 5.3
0.090 at VGS = - 1.8 V
- 4.6
• TrenchFET® Power MOSFETS: 1.8 V Rated
• ESD Protected: 4500 V
• Ultra-Low Thermal Resistance, PowerPAK®
Package with Low 1.07 mm Profile
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
SCHOTTKY PRODUCT SUMMARY
APPLICATIONS
VKA (V)
Vf (V)
Diode Forward Voltage
IF (A)
20
0.48 V at 0.5 A
1
• Charger Switching
PowerPAK 1212-8
A
3.30 mm
S
K
D
A
3.30 mm
1
A
2
S
3
G
4
G
K
8
3 kΩ
K
7
D
6
D
5
Bottom View
P-Channel MOSFET
Ordering Information:
Si7703EDN-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage (MOSFET and Schottky)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current (TJ = 150 °C) (MOSFET)a
Symbol
VDS
VKA
VGS
TA = 25 °C
TA = 85 °C
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)a
Maximum Power Dissipation (Schottky)a
Conduction)a
TA = 25 °C
TA = 85 °C
TA = 25 °C
TA = 85 °C
ID
IDM
IS
IF
IFM
PD
10 s
Steady State
- 20
20
± 12
- 6.3
- 4.5
Unit
V
± 12
- 4.3
- 3.1
- 20
- 2.3
- 1.1
A
1
7
2.8
1.5
2
1
1.3
0.7
1.1
0.6
W
TJ, Tstg
- 55 to 150
Operating Junction and Storage Temperature Range
°C
260
Soldering Recommendationsb,c
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71429
S13-0297-Rev. D, 11-Feb-13
For technical questions, contact: pmostechsupport@vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si7703EDN
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
t 10 s
Junction-to-Ambienta
Steady State
Junction-to-Case (Drain)
Steady State
Device
MOSFET
Schottky
MOSFET
Schottky
MOSFET
Schottky
Symbol
RthJA
RthJC
Typical
35
51
75
91
4
10
Maximum
44
64
94
115
5
12
Unit
°C/W
Notes
a. Surface Mounted on 1" x 1" FR4 board.
MOSFET SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VGS(th)
VDS = VGS, ID = - 800 µA
- 0.45
Typ.
Max.
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltage
a
-1
V
VDS = 0 V, VGS = ± 4.5 V
± 1.5
µA
VDS = 0 V, VGS = ± 12 V
± 100
mA
VDS = - 20 V, VGS = 0 V
-1
VDS = - 20 V, VGS = 0 V, TJ = 85 °C
-5
VDS - 5 V, VGS = - 4.5 V
- 20
µA
A
VGS = - 4.5 V, ID = - 6.3 A
0.041
0.048
RDS(on)
VGS = - 2.5 V, ID = - 5.3 A
0.057
0.068
VGS = - 1.8 V, ID = - 1 A
0.072
0.090
gfs
VDS = - 10 V, ID = - 6.3 A
14
VSD
IS = - 2.3 A, VGS = 0 V
- 0.8
- 1.2
12
18
VDS = - 10 V, VGS = - 4.5 V, ID = - 6.3 A
2.5
S
V
b
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
tr
Rise Time
td(off)
Turn-Off DelayTime
VDD = - 10 V, RL = 10
ID - 1 A, VGEN = - 4.5 V, RG = 6
tf
Fall Time
nC
2.9
2.5
4
4
6
15
23
12
18
s
Notes
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
SCHOTTKY SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
VF
Forward Voltage Drop
Maximum Reverse Leakage Current
Junction Capacitance
Irm
CT
Test Conditions
Typ.
Max.
IF = 0.5 A
Min.
0.42
0.48
IF = 0.5 A, TJ = 125 °C
0.33
0.4
Vr = 20 V
0.002
0.100
Vr = 20 V, TJ = 85 °C
0.10
1
Vr = 20 V, TJ = 125 °C
1.5
10
Vr = 10 V
31
Unit
V
mA
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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For technical questions, contact: pmostechsupport@vishay.com
Document Number: 71429
S13-0297-Rev. D, 11-Feb-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si7703EDN
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
10000
8
6
I GSS - Gate Current (µA)
I GSS - Gate Current (mA)
1000
4
2
100
TJ = 150 °C
10
1
0.1
TJ = 25 °C
0.01
0.001
0
0
4
8
12
16
0
3
6
9
12
15
VGS - Gate-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Gate-Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
20
20
TC = - 55 °C
VGS = 5 thru 2.5 V
ID - Drain Current (A)
ID - Drain Current (A)
25 °C
16
16
2V
12
8
125 °C
12
8
1.5 V
4
4
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
0.0
4.0
0.5
1.5
2.0
2.5
3.0
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2000
0.15
VGS = 1.8 V
0.09
VGS = 2.5 V
0.06
VGS = 4.5 V
1200
800
0.03
400
0.00
0
0
Ciss
1600
0.12
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
1.0
4
8
12
16
ID - Drain Current (A)
20
Coss
Crss
0
4
12
16
20
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Document Number: 71429
S13-0297-Rev. D, 11-Feb-13
8
For technical questions, contact: pmostechsupport@vishay.com
Capacitance
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si7703EDN
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
1.5
R DS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
5
VDS = 10 V
ID = 6.3 A
4
3
2
1
2
4
6
8
10
12
1.3
1.1
0.9
0.7
- 50
0
0
VGS = 4.5 V
ID = 6.3 A
14
- 25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
0.14
20
R DS(on) - On-Resistance ()
0.12
IS - Source Current (A)
10
TJ = 150 °C
TJ = 25 °C
0.10
0.08
ID = 6.3 A
0.06
0.04
0.02
0.00
1
0
0.3
0.6
0.9
1.2
1.5
0
1.8
1
VSD - Source-to-Drain Voltage (V)
3
4
5
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
50
ID = 800 µA
0.3
40
0.2
Power (W)
V GS(th) Variance (V)
2
0.1
30
20
0.0
10
- 0.1
- 0.2
- 50
- 25
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4
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
10
100
600
TJ - T emperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
For technical questions, contact: pmostechsupport@vishay.com
Document Number: 71429
S13-0297-Rev. D, 11-Feb-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si7703EDN
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 75 °C/W
3. T JM - TA = PDMZthJA(t )
Single Pulse
0.01
10-4
10-3
4. Surface Mounted
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
SCHOTTKY TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
5
1
IF - Forward Current (A)
I R - Reverse Current (mA)
20
10
0.1
20 V
0.01
10 V
TJ = 150 °C
1
TJ = 25 °C
0.001
0.1
0.0001
0
25
50
75
100
125
150
0
0.2
0.4
0.6
TJ - Junction Temperature (°C)
VF - Forward Voltage Drop (V)
Reverse Current vs. Junction Temperature
Forward Voltage Drop
Document Number: 71429
S13-0297-Rev. D, 11-Feb-13
For technical questions, contact: pmostechsupport@vishay.com
0.8
1.0
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si7703EDN
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
CT - Junction Capacitance (pF)
150
120
90
60
30
0
0
4
8
12
VKA - Reverse Voltage (V)
16
20
Capacitance
2
1
Normalized Effective T ransient
Thermal Impedance
Duty Cycle = 0.5
0.1
0.2
Notes:
0.1
PDM
t1
t2
1. Duty Cycle, D =
0.05
0.02
t1
t2
2. Per Unit Base = R thJA = 91 °C/W
3. T JM - TA = PDMZthJ A(t)
4. Surface Mounted
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
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Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71429.
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For technical questions, contact: pmostechsupport@vishay.com
Document Number: 71429
S13-0297-Rev. D, 11-Feb-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
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Document Number: 91000
