SI7844DP-T1-E3

Si7844DP Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.022 at VGS = 10 V 10 0.030 at VGS = 4.5 V 8.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC PowerPAK® SO-8 S1 6.15 mm 5.15 mm 1 D2 D1 G1 2 S2 3 G2 4 D1 8 D1 G1 7 G2 D2 6 D2 5 Bottom View Ordering Information: Si7844DP-T1-E3 (Lead (Pb)-free) Si7844DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Pulsed Drain Current IS TA = 25 °C Maximum Power Dissipationa TA = 70 °C PD 10 6.4 5.1 20 2.9 1.1 3.5 1.4 2.2 0.9 TJ, Tstg Operating Junction and Storage Temperature Range V 8.0 IDM Continuous Source Current (Diode Conduction)a Soldering Recommendations (Peak ID - 55 to 150 Temperature)b, c Unit A W °C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Symbol t  10 s Steady State Steady State RthJA RthJC Typical Maximum 26 35 60 85 3.9 5.5 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71328 S10-2606-Rev. E, 15-Nov-10 www.vishay.com 1 Si7844DP Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. 0.8 Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea V nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 5 VDS 5 V, VGS = 10 V RDS(on) 2.4 ± 100 µA 20 A VGS = 10 V, ID = 10 A 0.018 0.022 VGS = 4.5 V, ID = 8.5 A 0.024 0.030 gfs VDS = 15 V, ID = 10 A 22 VSD IS = 2.9 A, VGS = 0 V 0.75 1.2 13 20  S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time VDS = 15 V, VGS = 10 V, ID = 10 A 2 2.7 0.5 tr Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr  3.2 td(on) Rise Time nC 8 16 VDD = 15 V, RL = 15 ID  1 A, VGEN = 10 V, Rg = 6  10 20 21 40 10 20 IF = 2.9 A, dI/dt = 100 A/µs 40 80 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 20 3V VGS = 10 V thru 4 V 16 I D - Drain Current (A) I D - Drain Current (A) 16 12 8 12 8 TC = 125 °C 4 4 25 °C 2V - 55 °C 0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 2.5 3.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 71328 S10-2606-Rev. E, 15-Nov-10 Si7844DP Vishay Siliconix 0.040 1000 0.032 800 C - Capacitance (pF) R DS(on) - On-Resistance () TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) VGS = 4.5 V 0.024 VGS = 10 V 0.016 0.008 Ciss 600 400 Coss 200 Crss 0.000 0 0 4 8 12 16 20 0 6 ID - Drain Current (A) 12 30 Capacitance 1.6 10 VGS = 10 V ID = 10 A VDS = 15 V ID = 10 A 1.4 8 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 24 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 6 4 1.2 1.0 0.8 2 0.6 - 50 0 0 3 6 9 12 15 - 25 0 Gate Charge 50 75 100 125 150 On-Resistance vs. Junction Temperature 0.04 20 R DS(on) - On-Resistance ( ) TJ = 150 °C 10 TJ = 25 °C 1 0.0 25 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) I S - Source Current (A) 18 ID = 10 A 0.03 0.02 0.01 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 71328 S10-2606-Rev. E, 15-Nov-10 10 www.vishay.com 3 Si7844DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.4 100 80 ID = 250 µA 0.0 Power (W) VGS(th) Variance (V) 0.2 - 0.2 60 40 - 0.4 20 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 1 TJ - Temperature (°C) 0.1 Time (s) Threshold Voltage Single Pulse Power 10 100 Limited by R DS(on)* ID - Drain Current (A) 10 1 ms 1 10 ms 100 ms 1s 10 s 0.1 DC TA = 25 °C Single Pulse 0.01 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 60 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 71328 S10-2606-Rev. E, 15-Nov-10 Si7844DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 5 10 - 4 10 - 3 10 - 2 Square Wave Pulse Duration (s) 10 - 1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71328. Document Number: 71328 S10-2606-Rev. 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