SI7856ADP-T1-E3

Si7856ADP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0037 at VGS = 10 V 25 0.0048 at VGS = 4.5 V 23 Qg (Typ.) 39 PowerPAK SO-8 • Halogen-free available Available • TrenchFET® Power MOSFET RoHS* • Optimized for “Low Side” Synchronous COMPLIANT Rectifier Operation ® • New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile • 100 % Rg Tested APPLICATIONS S 6.15 mm • DC/DC Converters • Synchronous Rectifiers 5.15 mm 1 S 2 S 3 G 4 D D 8 D 7 D 6 D G 5 Bottom View Ordering Information: Si7856ADP-T1 Si7856ADP-T1-E3 (Lead (Pb)-free) Si7856ADP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C IDM IS Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction)a TA = 25 °C TA = 70 °C Maximum Power Dissipationa ID PD TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c 10 s 25 20 4.5 5.4 3.4 Steady State 30 ± 20 15 12 60 1.6 1.9 1.2 - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Symbol a Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Steady State RthJA RthJC Typical 18 50 1.0 Maximum 23 65 1.5 Unit °C/W Notes: a. Surface Mounted on 1” x 1” FR4 board. b. See Solder Profile ( http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 73157 S-80438-Rev. C, 03-Mar-08 www.vishay.com 1 Si7856ADP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. 1.0 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage a V nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 5 VDS ≥ 5 V, VGS = 10 V RDS(on) 3.0 ± 100 µA 30 A VGS = 10 V, ID = 25 A 0.0029 0.0037 VGS = 4.5 V, ID = 19 A 0.0036 0.0048 gfs VDS = 15 V, ID = 25 A 95 VSD IS = 2.9 A, VGS = 0 V 0.7 1.1 39 55 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg VDS = 15 V, VGS = 4.5 V, ID = 25 A 11.5 0.5 td(on) Turn-On Delay Time VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC 13.5 IF = 2.9 A, di/dt = 100 A/µs 1.0 1.5 21 35 15 25 100 150 30 45 50 80 Ω ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 60 VGS = 10 thru 4 V 50 I D - Drain Current (A) I D - Drain Current (A) 50 40 30 20 3V 40 30 20 TC = 125 °C 10 10 25 °C - 55 °C 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 73157 S-80438-Rev. C, 03-Mar-08 Si7856ADP Vishay Siliconix 25 °C, unless otherwise noted 0.0075 8000 0.0060 6400 0.0045 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) TYPICAL CHARACTERISTICS VGS = 4.5 V VGS = 10 V 0.0030 Ciss 4800 3200 Coss 1600 0.0015 Crss 0 0.0000 0 10 20 30 40 0 50 6 12 30 Capacitance 1.8 6 VDS = 15 V ID = 25 A 5 VGS = 10 V ID = 20 A 1.6 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 24 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current 4 3 2 1.4 1.2 1.0 0.8 1 0.6 - 50 0 0 10 20 30 40 50 60 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) On-Resistance vs. Junction Temperature Gate Charge 0.025 R DS(on) - On-Resistance (Ω) 50 I S - Source Current (A) 18 TJ = 150 °C 10 TJ = 25 °C 0.020 ID = 25 A 0.015 0.010 0.005 0.000 1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 73157 S-80438-Rev. C, 03-Mar-08 10 www.vishay.com 3 Si7856ADP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 200 ID = 250 µA 0.4 0.2 Power (W) V GS(th) Variance (V) 160 0.0 - 0.2 120 80 - 0.4 40 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 10 100 I D - Drain Current (A) Limited by RDS(on)* 10 1 ms 10 ms 1 100 ms 1s 10 s 0.1 0.01 0.1 TC = 25 °C Single Pulse 1 DC 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 50 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 73157 S-80438-Rev. C, 03-Mar-08 Si7856ADP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73157. Document Number: 73157 S-80438-Rev. C, 03-Mar-08 www.vishay.com 5 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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