Si7860ADP
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
30
RDS(on) (Ω)
ID (A)
0.0095 at VGS = 10 V
16
0.0125 at VGS = 4.5 V
16
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• PWM Optimized for High Efficiency
• New Low Thermal Resistance PowerPAK®
Package with Low 1.07 mm Profile
• 100 % Rg Tested
PowerPAK SO-8
APPLICATIONS
S
6.15 mm
• Buck Converter
- High Side or Low Side
• Synchronous Rectifier
- Secondary Rectifier
5.15 mm
1
S
2
S
3
G
D
4
D
8
D
7
D
6
G
D
5
Bottom View
S
Ordering Information: Si7860ADP-T1-E3 (Lead (Pb)-free)
Si7860ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
TA = 25 °C
TA = 70 °C
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
L = 0.1 mH
TA = 25 °C
TA = 70 °C
a
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b, c
10 s
16
13
4.1
4.8
3.1
Steady State
30
± 20
11
8
± 50
1.5
35
60
1.8
1.1
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)
Maximum Junction-to-Case (Drain)
Symbol
a
t ≤ 10 s
Steady State
Steady State
RthJA
RthJC
Typical
21
56
1.9
Maximum
26
70
2.5
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72651
S09-0272-Rev. D, 16-Feb-09
www.vishay.com
1
Si7860ADP
Vishay Siliconix
MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VGS(th)
VDS = VGS, ID = 250 µA
1.0
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Typ.
Max.
Unit
Static
Gate Threshold Voltage
Drain-Source On-State Resistancea
3.0
V
± 100
nA
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 70 °C
5
VDS ≥ 5 V, VGS = 10 V
RDS(on)
40
A
VGS = 10 V, ID = 16 A
0.0079
0.0095
VGS = 4.5 V, ID = 14 A
0.0105
0.0125
Forward Transconductancea
gfs
VDS = 15 V, ID = 16 A
60
Diode Forward Voltagea
VSD
IS = 3 A, VGS = 0 V
0.70
1.1
13
18
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = 15 V, VGS = 4.5 V, ID = 16 A
0.5
VDD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
S
V
nC
5
td(on)
Turn-On Delay Time
Ω
4.0
Rg
Gate Resistance
µA
IF = 3 A, dI/dt = 100 A/µs
1.7
3.2
18
27
12
18
46
70
19
30
40
70
Ω
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
50
VGS = 10 thru 4 V
40
I D - Drain Current (A)
I D - Drain Current (A)
40
30
20
3V
30
20
TC = 125 °C
10
10
25 °C
0
0
1
2
3
4
VDS - Drain-to-Source Voltage (V)
Output Characteristics
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2
5
0
0.0
0.5
1.0
1.5
2.0
- 55 °C
2.5
3.0
3.5
4.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 72651
S09-0272-Rev. D, 16-Feb-09
Si7860ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2500
0.012
2000
VGS = 4.5 V
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0.015
VGS = 10 V
0.009
0.006
Ciss
1500
1000
Coss
500
0.003
Crss
0
0.000
0
10
20
30
40
0
50
6
12
30
Capacitance
6
2.00
VDS = 15 V
ID = 16 A
5
VGS = 10 V
ID = 16 A
1.75
R DS(on) - On-Resistance
(Normalized)
V GS - Gate-to-Source Voltage (V)
24
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
4
3
2
1
1.50
1.25
1.00
0.75
0
0.50
0
4
8
12
16
20
- 50
- 25
Gate Charge
25
50
75
100
125
150
On-Resistance vs. Junction Temperature
0.040
R DS(on) - On-Resistance (Ω)
60
TJ = 150 °C
10
TJ = 25 °C
0.032
0.024
0.016
ID = 16 A
0.008
0.000
1
0.00
0
TJ - Junction Temperature (°C)
Qg - Total Gate Charge (nC)
I S - Source Current (A)
18
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 72651
S09-0272-Rev. D, 16-Feb-09
1.2
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
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3
Si7860ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.6
200
ID = 250 µA
160
Power (W)
V GS(th) Variance (V)
0.3
0.0
120
- 0.3
80
- 0.6
40
- 0.9
- 50
0
- 25
0
25
50
75
100
125
150
0.1
0.01
0.001
10
1
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by
R DS(on)*
I D - Drain Current (A)
10
1 ms
10 ms
1
100 ms
1s
10 s
0.1
0.01
0.01
TC = 25 °C
Single Pulse
0.1
1
DC
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 125 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 - 4
10 - 3
10 - 2
10 - 1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 72651
S09-0272-Rev. D, 16-Feb-09
Si7860ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 - 4
10 - 3
10 - 2
Square Wave Pulse Duration (s)
10 - 1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72651.
Document Number: 72651
S09-0272-Rev. D, 16-Feb-09
www.vishay.com
5
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Revision: 01-Jan-2022
1
Document Number: 91000