Si7886ADP
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
30
RDS(on) (Ω)
ID (A)
0.0040 at VGS = 10 V
25
0.0048 at VGS = 4.5 V
23
Qg (Typ.)
47
• Halogen-free available
• TrenchFET® Power MOSFET
RoHS
COMPLIANT
• Optimized for “Low Side” Synchronous
Rectifier Operation
• New Low Thermal Resistance PowerPAK® Package with
Low 1.07 mm Profile
• 100 % Rg Tested
PowerPAK SO-8
FEATURES
S
6.15 mm
• DC/DC Converters
• Synchronous Rectifiers
5.15 mm
1
S
2
S
3
D
G
4
D
8
D
7
D
6
G
D
5
Bottom View
S
Ordering Information: Si7886ADP-T1-E3 (Lead (Pb)-free)
Si7886ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)a
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
a
L = 0.1 mH
TA = 25 °C
TA = 70 °C
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b, c
10 s
25
20
4.5
5.4
3.4
Steady State
30
± 12
15
12
60
1.6
50
125
1.9
1.2
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case (Drain)
Symbol
t ≤ 10 s
Steady State
Steady State
RthJA
RthJC
Typical
18
50
1.0
Maximum
23
65
1.5
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73156
S-80440-Rev. D, 03-Mar-08
www.vishay.com
1
Si7886ADP
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Unit
VGS(th)
VDS = VGS, ID = 250 µA
0.6
1
1.5
V
IGSS
VDS = 0 V, VGS = ± 12 V
± 100
nA
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
5
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltage
a
VDS ≥ 5 V, VGS = 10 V
µA
30
A
VGS = 10 V, ID = 25 A
0.0032
0.0040
VGS = 4.5 V, ID = 23 A
0.0037
0.0048
gfs
VDS = 15 V, ID = 25 A
90
VSD
IS = 2.9 A, VGS = 0 V
0.7
RDS(on)
Ω
S
1.1
V
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
6450
VDS = 15 V, VSS = 0 V, f = 1 kHz
402
47
VDS = 15 V, VGS = 4.5 V, ID = 25 A
0.5
VDD = 15 V, RL = 15 Ω
ID ≅ 1.0 A, VGEN = 10 V, RG = 6 Ω
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
tf
Source-Drain Reverse Recovery
Time
trr
nC
9.0
td(on)
Turn-On Delay Time
60
12.5
Rg
Gate Resistance
pF
873
IF = 2.9 A, di/dt = 100 A/µs
1.0
1.5
17
30
14
25
158
230
43
65
50
80
Ω
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
60
VGS = 10 thru 3 V
50
I D - Drain Current (A)
I D - Drain Current (A)
50
40
30
20
40
30
20
TC = 125 °C
2V
10
10
25 °C
0
0
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2
2
4
6
8
10
0
0.0
0.5
1.0
- 55 °C
1.5
2.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2.5
3.0
Document Number: 73156
S-80440-Rev. D, 03-Mar-08
Si7886ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.0075
8000
Ciss
6000
0.0045
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
7000
0.0060
VGS = 4.5 V
0.0030
VGS = 10 V
5000
4000
3000
2000
0.0015
Coss
Crss
1000
0.0000
0
0
10
20
30
40
50
0
15
20
25
I D - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Capacitance
30
1.6
VDS = 15 V
ID = 25 A
VGS = 10 V
ID = 25 A
1.4
4
3
2
(Normalized)
5
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
10
On-Resistance vs. Drain Current
6
1.2
1.0
0.8
1
0
0
10
20
30
40
50
0.6
- 50
60
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
150
0.025
R DS(on) - On-Resistance ( Ω)
50
I S - Source Current (A)
5
TJ = 150 °C
10
TJ = 25 °C
0.020
0.015
0.010
ID = 25 A
0.005
0.000
1
0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 73156
S-80440-Rev. D, 03-Mar-08
10
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3
Si7886ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4
200
ID = 250 µA
160
0.0
Power (W)
V GS(th) Variance (V)
0.2
- 0.2
120
80
- 0.4
40
- 0.6
- 0.8
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
TJ - Temperature ( °C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by R DS(on)*
1 ms
I D - Drain Current (A)
10
10 ms
100 ms
1
100 s
10 s
0.1
TC = 25 °C
Single Pulse
0.01
0.1
1
DC
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum V GS at which R DS(on) is specified
Safe Operating Area, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 65 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 73156
S-80440-Rev. D, 03-Mar-08
Si7886ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
Square Wave Pulse Duration (s)
10- 1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73156.
Document Number: 73156
S-80440-Rev. D, 03-Mar-08
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Revision: 01-Jan-2022
1
Document Number: 91000
