SI7898DP-T1-GE3

Si7898DP Vishay Siliconix N-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 RDS(on) (Ω) ID (A) 0.085 at VGS = 10 V 4.8 0.095 at VGS = 6.0 V 4.5 PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFETs for Fast Switching • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile • PWM Optimized • 100 % Rg Tested APPLICATIONS S 6.15 mm 5.15 mm 1 • DC/DC Power Supply Primary Side Switch S 2 • Industrial Motor Drives S 3 G D 4 D 8 D 7 D 6 G D 5 Bottom View S Ordering Information: Si7898DP-T1-E3 (Lead (Pb)-free) Si7898DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Avalanche Current Symbol VDS VGS TA = 25 °C TA = 70 °C ID L = 0.1 mH IDM IAS IS Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD TJ, Tstg Operating Junction and Storage Temperature Range 10 s Steady State 150 ± 20 3.0 2.4 25 10 4.8 3.8 4.1 1.6 5.0 3.2 1.9 1.2 - 55 to 150 Soldering Recommendations (Peak Temperature)b,c 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJC Typical 20 52 2.1 Maximum 25 65 2.6 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71873 S09-0227-Rev. D, 09-Feb-09 www.vishay.com 1 Si7898DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Condition Min. 2.0 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage a 4.0 V ± 100 nA VDS = 150 V, VGS = 0 V 1 VDS = 150 V, VGS = 0 V, TJ = 55 °C 5 VDS ≥ 5 V, VGS = 10 V RDS(on) µA 25 A VGS = 10 V, ID = 3.5 A 0.068 0.085 VGS = 6.0 V, ID = 3.0 A 0.076 0.095 gfs VDS = 15 V, ID = 5 A 15 VSD IS = 2.5 A, VGS = 0 V 0.75 1.2 17 21 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg VDS = 75 V, VGS = 10 V, ID = 3.5 A 0.5 0.85 td(on) Turn-On Delay Time VDD = 75 V, RL = 21 Ω ID ≅ 3.5 A, VGEN = 10 V, Rg = 6 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC 3.2 6.0 IF = 2.5 A, dI/dt = 100 A/µs Ω 2.5 9.0 14 10 15 24 35 17 25 45 70 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 25 25 VGS = 10 V thru 6 V 20 I D - Drain Current (A) I D - Drain Current (A) 20 15 5V 10 5 15 10 TC = 125 °C 5 25 °C 3, 4 V 0 - 55 °C 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 10 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 71873 S09-0227-Rev. D, 09-Feb-09 Si7898DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1200 0.12 0.09 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.15 VGS = 6 V 0.06 VGS = 10 V Ciss 900 600 300 Crss 0.03 Coss 0 0.00 0 5 10 15 20 0 25 30 60 150 Capacitance 3.0 20 VDS = 75 V ID = 3.5 A VGS = 10 V ID = 3.5 A 2.5 16 RDS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 120 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current 12 8 4 2.0 1.5 1.0 0.5 0 .0 - 50 0 0 6 12 18 24 30 - 25 0 Gate Charge 50 75 100 125 150 On-Resistance vs. Junction Temperature 0.25 R DS(on) - On-Resistance (Ω) 50 TJ = 150 °C 10 TJ = 25 °C 1 0.0 25 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) I S - Source Current (A) 90 0.20 ID = 3.5 A 0.15 0.10 0.05 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 71873 S09-0227-Rev. D, 09-Feb-09 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si7898DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.0 200 160 ID = 250 μA Power (W) V GS(th) Variance (V) 0.5 0.0 120 - 0.5 80 - 1.0 40 - 1.5 - 50 0 - 25 0 25 50 75 100 125 150 0.1 0.01 0.001 TJ - Temperature (°C) 10 1 Time (s) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 10 μs I D - Drain Current (A) 10 Limited by R DS(on) 100 1 ms 1 10 ms 0.1 100 ms TC = 25 °C Single Pulse 1s 10 s 0.01 0.01 100 s, DC 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 65 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 71873 S09-0227-Rev. D, 09-Feb-09 Si7898DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71873. Document Number: 71873 S09-0227-Rev. D, 09-Feb-09 www.vishay.com 5 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8, (Single/Dual) L H E2 K E4 θ D4 W 1 M 1 Z 2 D5 D2 e 2 D1 D 2 D 3 4 θ 4 b 3 L1 E3 θ A1 Backside View of Single Pad H K E2 E4 L 1 D1 D5 2 D2 Detail Z K1 2 E1 E D3 (2x) D4 c A θ 3 4 Notes 1. Inch will govern. 2 Dimensions exclusive of mold gate burrs. 3. Dimensions exclusive of mold flash and cutting burrs. E3 Backside View of Dual Pad MILLIMETERS DIM. MIN. A 0.97 A1 b 0.33 c 0.23 D 5.05 D1 4.80 D2 3.56 D3 1.32 D4 D5 E 6.05 E1 5.79 E2 (for AL product) 3.30 E2 (for other product) 3.48 E3 3.68 E4 (for AL product) E4 (for other product) e K (for AL product) K (for other product) K1 0.56 H 0.51 L 0.51 L1 0.06  0° W 0.15 M ECN: C13-0702-Rev. K, 20-May-13 DWG: 5881 Revison: 20-May-13 b D2 INCHES NOM. MAX. MIN. NOM. MAX. 1.04 0.41 0.28 5.15 4.90 3.76 1.50 0.57 typ. 3.98 typ. 6.15 5.89 3.48 3.66 3.78 0.58 typ. 0.75 typ. 1.27 BSC 1.45 typ. 1.27 typ. 0.61 0.61 0.13 0.25 0.125 typ. 1.12 0.05 0.51 0.33 5.26 5.00 3.91 1.68 0.038 0 0.013 0.009 0.199 0.189 0.140 0.052 0.044 0.002 0.020 0.013 0.207 0.197 0.154 0.066 6.25 5.99 3.66 3.84 3.91 0.238 0.228 0.130 0.137 0.145 0.71 0.71 0.20 12° 0.36 0.022 0.020 0.020 0.002 0° 0.006 0.041 0.016 0.011 0.203 0.193 0.148 0.059 0.0225 typ. 0.157 typ. 0.242 0.232 0.137 0.144 0.149 0.023 typ. 0.030 typ. 0.050 BSC 0.057 typ. 0.050 typ. 0.024 0.024 0.005 0.010 0.005 typ. 1 0.246 0.236 0.144 0.151 0.154 0.028 0.028 0.008 12° 0.014 Document Number: 71655 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single 0.260 (6.61) 0.150 (3.81) 0.050 0.174 (4.42) 0.154 (1.27) 0.026 (0.66) (3.91) 0.024 (0.61) 0.050 0.032 0.040 (1.27) (0.82) (1.02) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72599 Revision: 21-Jan-08 www.vishay.com 15 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000