Si7911DN
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) (Ω)
ID (A)
0.051 at VGS = - 4.5 V
- 5.7
0.067 at VGS = - 2.5 V
- 5.0
0.094 at VGS = - 1.8 V
- 4.2
• Halogen-free Option Available
• TrenchFET® Power MOSFETS: 1.8 V Rated
• New Low Thermal Resistance PowerPAK®
Package
COMPLIANT
APPLICATIONS
• Portable
- PA Switch
- Battery Switch
- Load Switch
PowerPAK 1212-8
S1
S1
3.30 mm
RoHS
S2
3.30 mm
1
G1
2
S2
3
G2
4
G1
D1
8
G2
D1
7
D2
6
D2
5
Bottom View
D2
D1
Ordering Information: Si7911DN-T1-E3 (Lead (Pb)-free)
P-Channel MOSFET
Si7911DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
TA = 25 °C
TA = 85 °C
Continuous Drain Current (TJ = 150 °C)a
ID
IDM
IS
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
TA = 25 °C
TA = 85 °C
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
PD
10 s
Steady State
- 20
±8
V
- 5.7
- 4.1
- 4.2
- 3.0
- 20
- 2.1
2.5
1.3
TJ, Tstg
- 1.1
1.3
0.85
- 55 to 150
260
Soldering Recommendationsb, c
Unit
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Symbol
t ≤ 10 s
Steady State
Steady State
RthJA
Typical
40
75
5.6
Maximum
50
94
7
Unit
°C/W
Maximum Junction-to-Case
RthJC
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72340
S-81544-Rev. C, 07-Jul-08
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1
Si7911DN
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
- 0.40
Typ.
Max.
Unit
Static
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Gate Threshold Voltage
Drain-Source On-State Resistance
a
Diode Forward Voltage
a
V
nA
VDS = - 20 V, VGS = 0 V
-1
VDS = - 20 V, VGS = 0 V, TJ = 85 °C
-5
VDS ≤ - 5 V, VGS = - 4.5 V
µA
- 20
A
VGS = - 4.5 V, ID = - 5.7 A
0.040
0.051
VGS = - 2.5 V, ID = - 5.0 A
0.054
0.067
VGS = - 1.8 V, ID = - 1.1 A
0.075
0.094
gfs
VDS = - 6 V, ID = - 5.7 A
14
VSD
IS = - 2.3 A, VGS = 0 V
- 0.8
- 1.2
9.5
15
RDS(on)
Forward Transconductancea
- 1.0
± 100
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
2.5
Rg
7.2
td(on)
20
30
35
55
Gate Resistance
Turn-On Delay Time
VDS = - 6 V, VGS = - 4.5 V, ID = - 5.7 A
VDD = - 10 V, RL = 10 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω
tr
Rise Time
td(off)
Turn-Off DelayTime
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
nC
1.6
IF = - 2.1 A, dI/dt = 100 A/µs
Ω
70
105
40
60
25
50
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
20
20
TC = - 55 °C
VGS = 5 thru 2.5 V
16
ID - Drain Current (A)
ID - Drain Current (A)
16
2V
12
8
25 °C
12
125 °C
8
1.5 V
4
4
1V
0
0
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2
1
2
3
4
5
0
0.0
0.5
1.0
1.5
2.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2.5
3.0
Document Number: 72340
S-81544-Rev. C, 07-Jul-08
Si7911DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
TA = 25 °C, unless otherwise noted
1500
1200
0.16
VGS = 1.8 V
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0.20
0.12
VGS = 2.5 V
0.08
VGS = 4.5 V
Ciss
900
600
0.04
300
0.00
0
Coss
Crss
0
4
8
12
16
0
20
4
8
16
20
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
1.6
5
VGS = 4.5 V
ID = 5.7 A
VDS = 10 V
ID = 5.7 A
1.4
4
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
12
3
2
1.2
1.0
0.8
1
0.6
- 50
0
0
2
4
6
8
10
12
- 25
0
Qg - Total Gate Charge (nC)
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
0.20
20
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
10
TJ = 150 °C
0.16
ID = 5.7 A
0.12
ID = 1.1 A
0.08
0.04
TJ = 25 °C
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72340
S-81544-Rev. C, 07-Jul-08
5
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Si7911DN
Vishay Siliconix
0.4
30
0.3
25
0.2
20
ID = 250 µA
Power (W)
VGS(th) Variance (V)
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
0.1
15
0.0
10
- 0.1
5
- 0.2
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
TJ - Temperature (°C)
Threshold Voltage
10
1
Time (s)
100
600
Single Pulse Power, Junction-to-Ambient
100
IDM Limited
Limited by RDS(on)*
I D - Drain Current (A)
10
P(t) = 0.0001
P(t) = 0.001
1
P(t) = 0.01
ID(on)
Limited
P(t) = 0.1
P(t) = 1
TA = 25 °C
Single Pulse
0.1
P(t) = 10
DC
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 75 °C/W
3. T JM - T A = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 72340
S-81544-Rev. C, 07-Jul-08
Si7911DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
TA = 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72340.
Document Number: 72340
S-81544-Rev. C, 07-Jul-08
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Revision: 01-Jan-2022
1
Document Number: 91000