Si7925DN
Vishay Siliconix
Dual P-Channel 12-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)
0.042 at VGS = - 4.5 V
- 6.5
- 12
0.058 at VGS = - 2.5 V
- 5.5
0.082 at VGS = - 1.8 V
- 1.2
PowerPAK 1212-8
S1
3.30 mm
• Halogen-free Option Available
• TrenchFET® Power MOSFET: 1.8 V Rated
•
•
•
•
S1
G1
2
COMPLIANT
Load Switch
PA Switch
Battery Switch
Bi-Directional Switch
3.30 mm
1
RoHS
APPLICATIONS
S2
S2
3
G2
4
D1
8
G1
D1
G2
7
D2
6
D2
5
Bottom View
Ordering Information: Si7925DN-T1-E3 (Lead (Pb)-free)
Si7925DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1
D2
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS
- 12
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 85 °C
Continuous Source Current (Diode Conduction)a
IS
TA = 25 °C
TA = 85 °C
PD
- 4.8
- 4.7
- 3.4
- 20
- 2.1
A
- 1.1
2.5
1.3
1.5
0.69
TJ, Tstg
Operating Junction and Storage Temperature Range
V
- 6.5
IDM
Pulsed Drain Current
Maximum Power Dissipationa
ID
Unit
- 55 to 150
Soldering Recommendations (Peak Temperature)b, c
W
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case
Symbol
t ≤ 10 s
Steady State
Steady State
RthJA
RthJC
Typical
Maximum
40
50
75
94
5.6
7
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72343
S-81544-Rev. C, 07-Jul-08
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1
Si7925DN
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
- 0.40
Typ.
Max.
Unit
Static
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Gate Threshold Voltage
Drain-Source On-State Resistance
a
Diode Forward Voltage
a
V
nA
VDS = - 12 V, VGS = 0 V
-1
VDS = - 12 V, VGS = 0 V, TJ = 85 °C
-5
VDS ≤ - 5 V, VGS = - 4.5 V
µA
- 20
A
VGS = - 4.5 V, ID = - 6.5 A
0.033
0.042
VGS = - 2.5 V, ID = - 5.5 A
0.046
0.058
VGS = - 1.8 V, ID = - 1.2 A
0.065
0.082
gfs
VDS = - 6 V, ID = - 6.5 A
19
VSD
IS = - 2.1 A, VGS = 0 V
- 0.8
- 1.2
11
12
VDS = - 6 V, VGS = - 4.5 V, ID = - 6.5 A
1.7
RDS(on)
Forward Transconductancea
- 1.0
± 100
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
2.8
Rg
8.2
td(on)
20
30
50
75
Gate Resistance
Turn-On Delay Time
VDD = - 6 V, RL = 6 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
IF = - 2.1 A, dI/dt = 100 A/µs
nC
Ω
70
105
50
75
41
80
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
20
TC = - 55 °C
VGS = 5 thru 2.5 V
16
I D - Drain Current (A)
I D - Drain Current (A)
16
2V
12
8
1.5 V
4
25 °C
12
125 °C
8
4
1V
0
0
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2
1
2
3
4
5
6
0
0.0
0.5
1.0
1.5
2.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2.5
Document Number: 72343
S-81544-Rev. C, 07-Jul-08
Si7925DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1500
1200
0.16
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0.20
VGS = 1.8 V
0.12
0.08
VGS = 2.5 V
600
Coss
VGS = 4.5 V
0.04
Ciss
900
300
Crss
0
0.00
0
4
8
12
16
0
20
2
4
10
12
Capacitance
5
1.4
VGS = 4.5 V
ID = 6.5 A
VDS = 6 V
ID = 6.5 A
4
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
8
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
3
2
1.2
1.0
0.8
1
0.6
- 50
0
0
2
4
6
8
10
12
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
20
150
0.20
RDS(on) - On-Resistance (Ω)
I S - Source Current (A)
6
TJ = 150°C
10
0.16
ID = 6.5 A
0.12
ID = 1.2 A
0.08
0.04
TJ = 25°C
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 72343
S-81544-Rev. C, 07-Jul-08
1.6
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
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Si7925DN
Vishay Siliconix
0.4
30
0.3
25
0.2
20
ID = 250 µA
Power (Ω)
V GS(th) Variance (V)
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.1
15
0.0
10
- 0.1
5
- 0.2
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
TJ - Temperature (°C)
1
10
100
600
Time (s)
Threshold Voltage
Single Pulse Power
100
Limited by R DS (on)*
IDM Limited
I D - Drain Current (A)
10
P(t) = 0.001
P(t) = 0.01
1
ID(on)
Limited
P(t) = 0.1
P(t) = 1
TA = 25 °C
Single Pulse
0.1
P(t) = 10
DC
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 75 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 72343
S-81544-Rev. C, 07-Jul-08
Si7925DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72343.
Document Number: 72343
S-81544-Rev. C, 07-Jul-08
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5
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Revision: 01-Jan-2022
1
Document Number: 91000