SI7945DP-T1-E3

Si7945DP Vishay Siliconix Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.020 at VGS = - 10 V - 10.9 0.031 at VGS = - 4.5 V - 8.8 Qg (Typ.) 49 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFETs • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile APPLICATIONS • Battery and Load Switching - Notebook PCs - Game Systems - Set-Top Box PowerPAK SO-8 S1 6.15 mm 5.15 mm 1 G1 2 S1 S2 3 S2 G2 4 D1 8 G1 D1 G2 7 D2 6 D2 5 Bottom View Ordering Information: Si7945DP-T1-E3 (Lead (Pb)-free) Si7945DP-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Symbol VDS VGS TA = 25 °C TA = 70 °C IDM IS Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa ID TA = 25 °C TA = 70 °C PD TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c 10 s Steady State - 30 ± 20 - 10.9 - 7.0 - 8.7 - 5.6 - 30 - 2.9 - 1.2 3.5 1.4 2.2 0.9 - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJC Typical 26 60 2.5 Maximum 35 85 3.1 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 72090 S09-0227-Rev. D, 09-Feb-09 www.vishay.com 1 Si7945DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. - 1.0 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = - 250 µA - 3.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V -1 VDS = - 30 V, VGS = 0 V, TJ = 55 °C -5 On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea RDS(on) Forward Transconductancea Diode Forward Voltage VDS ≤ - 5 V, VGS = - 10 V a µA - 30 A VGS = - 10 V, ID = - 10.9 A 0.016 0.020 VGS = - 4.5 V, ID = - 8.8 A 0.025 0.031 gfs VDS = - 15 V, ID = - 10.9 A 26 VSD IS = - 2.9 A, VGS = 0 V - 0.8 - 1.2 49 74 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 13 Turn-On Delay Time td(on) 15 VDS = - 15 V, VGS = - 10 V, ID = - 10.9 A VDD = - 15 V, RL = 15 Ω ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC 7.3 IF = - 2.9 A, dI/dt = 100 A/µs 25 15 25 130 200 80 120 85 130 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 30 VGS = 10 V thru 4 V 24 I D - Drain Current (A) I D - Drain Current (A) 24 18 12 6 3V 18 12 TC = 125 °C 6 25 °C 0 0 www.vishay.com 2 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 - 55 °C 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3.5 4.0 Document Number: 72090 S09-0227-Rev. D, 09-Feb-09 Si7945DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3500 3000 0.04 0.03 VGS = 4.5 V 0.02 VGS = 10 V C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.05 2500 Ciss 2000 1500 1000 Coss 0.01 500 Crss 0 0.00 0 6 12 18 24 0 30 6 12 30 Capacitance 1.6 10 VGS = 10 V ID = 10.9 A VDS = 15 V ID = 10.9 A 1.4 On-Resistance (Normalized) 8 6 4 RDS(on) V GS - Gate-to-Source Voltage (V) 24 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current 1.2 1.0 0.8 2 0.6 - 50 0 0 10 20 30 40 50 - 25 0 Qg - Total Gate Charge (nC) 50 75 100 125 150 On-Resistance vs. Junction Temperature 0.05 R DS(on) - On-Resistance (Ω) 30 TJ = 150 °C 10 TJ = 25 °C 1 0.0 25 TJ - Junction Temperature (°C) Gate Charge I S - Source Current (A) 18 0.04 ID = 10.9 A 0.03 0.02 0.01 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 72090 S09-0227-Rev. D, 09-Feb-09 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si7945DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 40 30 ID = 250 µA Power (W) V GS(th) Variance (V) 0.4 0.2 - 0.0 20 10 - 0.2 - 0.4 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 1 10 100 1000 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on) IDM Limited P(t) = 0.0001 I D - Drain Current (A) 10 P(t) = 0.001 1 P(t) = 0.01 ID(on) Limited P(t) = 0.1 P(t) = 1 P(t) = 10 TA = 25 °C Single Pulse 0.1 DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 60 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72090 S09-0227-Rev. D, 09-Feb-09 Si7945DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72090. Document Number: 72090 S09-0227-Rev. D, 09-Feb-09 www.vishay.com 5 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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