Si8404DB
Vishay Siliconix
N-Channel 1.5-V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)a
0.031 at VGS = 4.5 V
12.2
0.033 at VGS = 2.5 V
11.6
0.035 at VGS = 1.8 V
11.2
0.043 at VGS = 1.5 V
10.2
VDS (V)
8
Qg (Typ.)
• TrenchFET® Power MOSFET
• Industry First 1.5 V Rated MOSFET
20 nC
RoHS
COMPLIANT
• Ultra Small MICRO FOOT® Chipscale
Packaging Reduces Footprint Area, Profile
(0.62 mm) and On-Resistance Per Footprint Area
APPLICATIONS
• Low Threshold Load Switch for Portable Devices
- Low Power Consumption
- Increased Battery Life
D
MICRO FOOT
Bump Side View
3
Backside View
2
D
D
8404
XXX
S
4
G
1
G
Device Marking: 8404
xxx = Date/Lot Traceability Code
S
Ordering Information: Si8404DB-T1-E1 (Lead (Pb)-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
ID
IDM
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
IS
PD
Limit
8
±5
12.2
9.8
8.1b,c
6.5b,c
20
5.2
2.3b,c
6.25
4
2.78b,c
1.78b,c
- 55 to 150
260
TJ, Tstg
IR/Convection
Package Reflow Conditionsd
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.
e. In this document, any reference to the Case represents the body of the MICRO FOOT device and Foot is the bump.
Document Number: 73518
S-82118-Rev. C, 08-Sep-08
Unit
V
A
W
°C
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1
Si8404DB
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta b
Steady State
Maximum Junction-to-Foot (Drain)
Symbol
Typical
Maximum
RthJA
35
45
RthJF
16
20
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 72 °C/W.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
8
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
Gate-Source Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State
RDS(on)
Resistancea
a
Forward Transconductance
gfs
8.9
ID = 250 µA
VDS = VGS, ID = 250 µA
V
mV/°C
- 2.5
0.35
1.0
VDS = 0 V, VGS = 5 V
100
VDS = 8 V, VGS = 0 V
1
VDS = 8 V, VGS = 0 V , TJ = 70 °C
10
VDS ≤ 5 V, VGS = 4.5 V
20
V
nA
µA
A
VGS = 4.5 V, ID = 1 A
0.025
0.031
VGS = 2.5 V, ID = 1 A
0.027
0.033
VGS = 1.8 V, ID = 1 A
0.029
0.035
VGS = 1.5 V, ID = 1 A
0.032
0.043
VDS = 4 V, ID = 1 A
8.3
13
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
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2
1950
VDS = 4 V, VGS = 0 V, f = 1 MHz
tr
tf
pF
350
VDS = 4 V, VGS = 5 V, ID = 1 A
VDS = 4 V, VGS = 4.5 V, ID = 1 A
22
33
20
30
3.5
nC
1.8
VGS = 0.1 V, f = 1 MHz
td(on)
td(off)
610
8
VDD = 4 V, RL = 4 Ω
ID ≅ 1 A, VGEN = - 4.5 V, Rg = 1 Ω
Ω
13
12
12
18
110
165
40
60
ns
Document Number: 73518
S-82118-Rev. C, 08-Sep-08
Si8404DB
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery
Time
trr
Body Diode Reverse Recovery
Charge
Qrr
6.25
TC = 25 °C
A
20
IS = 1 A, VGS = 0 V
IF = - 1 A, dI/dt = 100 A/µs, TJ = 25 °C
0.6
1.2
104
156
88
132
Reverse Recovery Fall Time
ta
26
Reverse Recovery Rise Time
tb
78
V
ns
nC
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
TA = 25 °C, unless otherwise noted
20
20
I D - Drain Current (A)
I D - Drain Current (A)
VGS = 5 thru 1.5 V
15
10
15
10
TC = 125 °C
5
5
TC = 25 °C
VGS = 1 V
0
0.0
0.5
1.0
1.5
2.0
0
0.0
TC = - 55 °C
0.3
0.6
0.9
1.2
1.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
Document Number: 73518
S-82118-Rev. C, 08-Sep-08
1.8
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3
Si8404DB
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
1.5
ID = 1 A
RDS(on) - On-Resistance
(Normalized)
RDS(on) - D to S On-Resistance (Ω)
0.05
0.04
VGS = 1.5 V
VGS = 1.8 V
0.03
VGS = 2.5 V
1.3
VGS = 4.5 V, 2.5 V, 1.8 V
1.1
VGS = 1.5 V
0.9
VGS = 4.5 V
0.02
0
5
10
15
0.7
- 50
20
0
50
75
100
125
ID - Drain Current (A)
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
150
10.00
ID = 1 A
I S - Source Current (A)
4
VDS = 4 V
3
VDS = 6.4 V
2
TA = 150 °C
1.00
TA = 25 °C
0.10
1
0
0
5
10
15
20
0.01
0.0
25
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
Qg - Total Gate Charge (nC)
Gate Charge
Forward Diode Voltage vs Temp
3000
0.8
2400
0.7
ID = 250 µA
Ciss
0.6
1800
VGS(th) (V)
C - Capacitance (pF)
25
RDS(on) vs. Drain Current
5
VGS - Gate-to-Source Voltage (V)
- 25
1200
0.5
0.4
Coss
600
0.3
Crss
0
0
2
4
6
VDS - Drain-to-Source Voltage (V)
Capacitance
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4
8
0.2
- 50
- 25
0
25
50
75
100
125
150
TJ - Temperature (°C)
Threshold Voltage
Document Number: 73518
S-82118-Rev. C, 08-Sep-08
Si8404DB
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
100
0.050
Limited by RDS(on)*
ID = 1 A
10
I D - Drain Current (A)
RDS(on) - On-Resistance (Ω)
0.045
0.040
0.035
TA = 125 °C
0.030
P(t) = 100 ms
P(t) = 1s
P(t) = 10s
1
DC
0.1
TA = 25 °C
Single Pulse
0.01
0.025
TA = 25 °C
0.001
0.1
0.020
0
1
2
3
4
5
1
10
100
VDS - Drain-to-Source Voltage (V)
* V GS > minimum V GS at which R DS(on) is specified
VGS - Gate-to-Source Voltage (V)
RDS(on) vs VGS vs Temperature
Safe Operating Area, Junction-to-Ambient
80
8
7
6
Power (W)
Power (W)
60
40
5
4
3
20
2
1
0
0
0.01
0.001
0.1
1
10
0
25
Time (s)
50
75
100
125
150
Case Temperature (°C)
Single Pulse Power, Junction-to-Ambient
Power De-Rating
14
ID - Drain Current (A)
12
10
8
6
4
** The power dissipation PD is based on TJ(max) = 150 °C, using
2
junction-to-foot thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is
0
0
25
50
75
100
TF - Foot Temperature (°C)
125
150
used. It is used to determine the current rating, when this rating falls
below the package limit.
Current De-Rating**
Document Number: 73518
S-82118-Rev. C, 08-Sep-08
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Si8404DB
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 72 °C/W
3. T JM - T A = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
100
10
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
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Document Number: 73518
S-82118-Rev. C, 08-Sep-08
Si8404DB
Vishay Siliconix
PACKAGE OUTLINE
MICRO FOOT: 4-BUMP (2 x 2, 0.8-mm PITCH)
4 x ∅ 0.30 ~ 0.31
Note 3
Solder Mask ∅ ~ 0.40
e
A2
Silicon
A
A1
Bump Note 2
b Diameter
e
S
Recommended Land
E
e
8404
XXX
e
S
D
Mark on Backside of Die
Notes (Unless Otherwise Specified):
1. Laser mark on the silicon die back, coated with a thin metal.
2. Bumps are 95.5/3.8/0.7 Sn/Ag/Cu.
3. Non-solder mask defined copper landing pad.
4. The flat side of wafers is oriented at the bottom.
Dim.
Millimetersa
Inches
Min.
Max.
Min.
Max.
A
0.600
0.650
0.0236
0.0256
A1
0.260
0.290
0.0102
0.0114
A2
0.340
0.360
0.0134
0.0142
b
0.370
0.410
0.0146
0.0161
D
1.520
1.600
0.0598
0.0630
E
1.520
1.600
0.0598
0.0630
e
0.750
0.850
0.0295
0.0335
S
0.370
0.380
0.0146
0.0150
Notes:
a. Use millimeters as the primary measurement.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?73518.
Document Number: 73518
S-82118-Rev. C, 08-Sep-08
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7
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Vishay
Disclaimer
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Revision: 01-Jan-2022
1
Document Number: 91000
