SI8407DB-T2-E1

Si8407DB Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.027 at VGS = - 4.5 V - 8.2 0.032 at VGS = - 2.5 V - 7.5 0.045 at VGS = - 1.8 V - 6.6 MICRO FOOT Bump Side View S S 4 6 G S 3 • TrenchFET® Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Ultra-Low Footprint Area Profile (0.62 mm) and On-Resistance • Compliant to RoHS Directive 2002/95/EC APPLICATIONS Backside View 5 • Halogen-free according to IEC 61249-2-21 Definition • Portable Devices - PA Switch - Battery Switch - Load Switch S 1 D D 2 G Device Marking: 8407 xxx = Date/Lot Traceability Code Ordering Information: Si8407DB-T2-E1 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 5s Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa IS TA = 25 °C TA = 70 °C - 5.8 - 6.5 - 4.6 - 15 - 2.6 - 1.34 2.9 1.47 1.86 0.94 TJ, Tstg Operating Junction and Storage Temperature Range b PD V - 8.2 IDM Pulsed Drain Current Package Reflow Conditions ID Unit - 55 to 150 IR/Convection A W °C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (drain) Symbol t5s Steady State Steady State RthJA RthJF Typical Maximum 33 43 72 85 15 19 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering. Document Number: 72254 S11-1383-Rev. D, 11-Jul-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8407DB Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. - 0.4 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = - 350 µA - 0.9 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 70 °C -5 On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea a -5 A VGS = - 4.5 V, ID = - 1 A 0.022 0.027 VGS = - 2.5 V, ID = - 1 A 0.026 0.032 VGS = - 1.8 V, ID = - 1 A 0.033 0.045 gfs VDS = - 10 V, ID = - 1 A 10 VSD IS = - 1 A, VGS = 0 - 0.6 - 1.1 32 50 VDS = - 10 V, VGS = - 4.5 V, ID = - 1 A 3.6 RDS(on) Forward Transconductancea Diode Forward Voltage VDS  - 5 V, VGS = - 4.5 V µA  S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) 8.5 VDD = - 10 V, RL = 10  ID  - 1 A, VGEN = - 4.5 V, Rg = 6  tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC IF = - 1 A, dI/dt = 100 A/µs 30 45 45 70 550 825 220 330 265 500 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 15 15 VGS = 4.5 thru 2 V 12 1.5 V I D - Drain Current (A) I D - Drain Current (A) 12 9 6 9 6 TC = 125 °C 3 3 25 °C 1V 0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 2.5 - 55 °C 3.0 0 0.0 0.5 1.0 1.5 2.0 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 72254 S11-1383-Rev. D, 11-Jul-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8407DB Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2500 0.06 Ciss 2000 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.05 0.04 VGS = 1.8 V VGS = 2.5 V 0.03 0.02 1500 1000 VGS = 4.5 V Coss 500 0.01 Crss 0 0.00 0 4 8 12 16 0 20 4 8 On-Resistance vs. Drain Current 20 1.6 VDS = 10 V ID = 1 A 4 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 16 Capacitance 5 3 2 1 0 5 10 15 20 25 30 35 1.2 1.0 0.8 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 0.10 20 RDS(on) - On-Resistance (Ω) 10 TJ = 150 °C TJ = 25 °C 1 0.0 VGS = 4.5 V ID = 1 A 1.4 0.6 - 50 0 I S - Source Current (A) 12 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) 0.08 ID = 1 A 0.06 0.04 0.02 0.00 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 72254 S11-1383-Rev. D, 11-Jul-11 1.5 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) 5 On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8407DB Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.6 60 ID = 350 µA 50 40 Power (W) V GS(th) Variance (V) 0.4 0.2 0.0 30 20 - 0.2 10 - 0.4 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 0 0.001 150 Threshold Voltage 0.01 0.1 Time (s) 10 1 Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* 10 µs, 100 µs I D - Drain Current (A) 10 1 ms 1 0.1 10 ms TA = 25 °C Single Pulse 100 ms 1s 10 s 100 s, DC 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 72 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72254 S11-1383-Rev. D, 11-Jul-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8407DB Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 72254 S11-1383-Rev. D, 11-Jul-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8407DB Vishay Siliconix PACKAGE OUTLINE MICRO FOOT: 6-BUMP (2.4 mm x 2 mm, 0.8 mm PITCH) e e e Recommended Land Backside Labels D S1 e s R e Q 6 Bumps (Note 2) Bump Diameter: φ 0.38 - 0.40 mm Note 3 A2 E e P A1 1 A 2 Notes (Unless Otherwise Specified): 1. All dimensions are in millimeters. 2. Bumps are 95.5/3.8/0.7 Sn/Ag/Cu with diameter 0.38 mm - 0.40 mm. 3. Backside surface is coated with a Ti/Nl/Ag layer. 4. Non-solder mask defined copper landing pad. 5. The flat side of wafers is oriented at the bottom. 6. is location of Pin 1P. · Dim. Millimetersa Inches PAD DISTRIBUTION TABLE Min. Max. Min. Max. P Q R A 0.600 0.650 0.0236 0.0256 1 Drain Gate Source 2 Drain Source Source A1 0.260 0.290 0.0102 0.0114 A2 0.340 0.360 0.0134 0.0142 b 0.370 0.410 0.0146 0.0161 D 1.920 2.000 0.0756 0.0787 E 2.320 2.400 0.0913 0.0945 e 0.750 0.850 0.0295 0.0335 S 0.370 0.400 0.0150 0.0157 S1 0.580 0.600 0.0228 0.0236 Notes: a. Use millimeters as the primary measurement. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72254. www.vishay.com 6 Document Number: 72254 S11-1383-Rev. D, 11-Jul-11 This document is subject to change without notice. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000