SI8410DB-T2-E1

Si8410DB www.vishay.com Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES MICRO FOOT® 1 x 1 S 3 1 x xxx xx x m m 1 S 2 • TrenchFET® power MOSFET • Ultra small 1 mm x 1 mm maximum outline • Ultra-thin 0.548 mm maximum height • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 G 4 D Bump Side View m 1m Backside View Marking code: xxxx = 8410 xxx = Date / lot traceability code APPLICATIONS D • Load switch PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 4.5 V RDS(on) max. () at VGS = 2.5 V RDS(on) max. () at VGS = 1.8 V RDS(on) max. () at VGS = 1.5 V Qg typ. (nC) ID (A) a Configuration • Power management 20 0.037 0.041 0.047 0.068 5.9 5.7 Single • High speed switching G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free MICRO FOOT Si8410DB-T2-E1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) Continuous source-drain diode current Maximum power dissipation Package reflow conditions LIMIT VDS VGS 20 ±8 5.7 a 4.5 a 3.8 c 3c 20 1.5 a 0.65 c 1.8 a 1.1 a 0.78 c 0.5 c -55 to +150 260 260 ID IDM TC = 25 °C TA = 25 °C TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Operating junction and storage temperature range e SYMBOL IS PD TJ, Tstg VPR IR/convection UNIT V A W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM t = 10 s 55 70 Maximum junction-to-ambient a, b RthJA Maximum junction-to-ambient c, d t = 10 s 125 160 Notes a. Surface mounted on 1" x 1" FR4 board with full copper, t = 10 s, TA = 25 °C b. Maximum under steady state conditions is 100 °C/W c. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 10 s d. Maximum under steady state conditions is 190 °C/W e. Refer to IPC/JEDEC® (J-STD-020), no manual or hand soldering f. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump S15-1510-Rev. B, 29-Jun-15 UNIT °C/W Document Number: 62961 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8410DB www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 20 - - V - 17 - - -2.6 - Static Drain-source breakdown voltage VDS/TJ VDS temperature coefficient ID = 250 μA mV/°C VGS(th) temperature coefficient VGS(th)/TJ Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 0.4 - 0.85 V IGSS VDS = 0 V, VGS = ± 8 V - - ± 100 nA VDS = 20 V, VGS = 0 V - - 1 VDS = 20 V, VGS = 0 V, TJ = 70 °C - - 10 VDS  -5 V, VGS = 4.5 V 10 - - VGS = 4.5 V, ID = 1.5 A - 0.030 0.037 VGS = 2.5 V, ID = 1 A - 0.033 0.041 VGS = 1.8 V, ID = 1 A - 0.038 0.047 VGS = 1.5 V, ID = 0.5 A - 0.044 0.068 VDS = 10 V, ID = 1.5 A - 17 - - 620 - - 110 - - 40 - - 10.4 16 - 5.9 9 VDS = 10 V, VGS = 4.5 V, ID = 1.5 A - 0.7 - - 0.66 - VGS = 0.1 V, f = 1 MHz - 5.3 - - 5 10 - 25 50 - 26 50 tf - 10 20 td(on) - 5 10 - 22 45 - 23 45 - 10 20 Gate-source leakage Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance RDS(on) a gfs μA A  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time tr td(off) Fall time Turn-on delay time Rise time Turn-off delay time VDS = 10 V, VGS = 8 V, ID = 1.5 A td(on) Rise time Turn-off delay time VDS = 10 V, VGS = 0 V, f = 1 MHz tr td(off) Fall time VDD = -10 V, RL = 6.7  ID  1.5 A, VGEN = -4.5 V, Rg = 1  VDD = -10 V, RL = 6.7  ID  -1.5 A, VGEN = -8 V, Rg = 1  tf pF nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TA = 25 °C IS = 1.5 A, VGS = 0 IF = 1.5 A, di/dt = 100 A/μs, TJ = 25 °C - - 1.5 - - 20 - 0.7 1.2 V - 15 30 ns - 6 15 nC - 8.5 - - 6.5 - A ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing   Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1510-Rev. B, 29-Jun-15 Document Number: 62961 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8410DB www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 10 VGS = 5 V thru 2 V 8 ID - Drain Current (A) ID - Drain Current (A) 16 VGS = 1.5 V 12 8 6 TC = 25 °C 4 TC = 125 °C 2 4 VGS = 1 V TC = -55 °C 0 0 0.0 0.5 1.0 1.5 0.0 2.0 0.3 0.6 0.9 1.2 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1.5 800 0.10 VGS = 1.5 V C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Ciss 600 0.08 0.06 VGS = 1.8 V 0.04 400 200 VGS = 2.5 V Coss Crss VGS = 4.5 V 0.02 0 0 4 8 12 16 20 0 4 ID - Drain Current (A) 8 16 20 Capacitance On-Resistance vs. Drain Current and Gate Voltage 1.5 ID = 1.5 A RDS(on) - On-Resistance (Normalized) 8 VGS - Gate-to-Source Voltage (V) 12 VDS - Drain-to-Source Voltage (V) VDS = 10 V 6 VDS = 16 V VDS = 5 V 4 2 0 0 2 4 6 8 10 12 VGS = 2.5 V 1.4 VGS = 4.5 V ID = 1.5 A 1.3 1.2 1.1 VGS = 1.8 V, 1.5 V 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S15-1510-Rev. B, 29-Jun-15 Document Number: 62961 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8410DB www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.10 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 100 10 TJ = 150 °C TJ = 25 °C 1 ID = 1.5 A 0.08 0.06 TJ = 125 °C 0.04 TJ = 25 °C 0.02 0.1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 25 0.8 0.7 20 Power (W) VGS(th) (V) 0.6 0.5 ID = 250 μA 15 10 0.4 5 0.3 0.2 -50 -25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) 0.1 1 10 100 1000 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by ID(cont) Limited by R DS(on) * Limited by IDM ID - Drain Current (A) 10 100 μs 1 1 ms 10 ms 0.1 100 ms 10 s, 1 s DC TA = 25 °C BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S15-1510-Rev. B, 29-Jun-15 Document Number: 62961 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8410DB www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.5 6 1.2 Power Dissipation (W) ID - Drain Current (A) 5 4 3 2 0.9 0.6 0.3 1 0 0.0 0 25 50 75 100 125 150 25 50 75 100 125 TA - Case Temperature (°C) TA - Ambient Temperature (°C) Current Derating a Power Derating 150 Note • When mounted on 1" x 1" FR4 with full copper a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S15-1510-Rev. B, 29-Jun-15 Document Number: 62961 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8410DB www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 100 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient (1" x 1" FR4 Board with Full Copper) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 190 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient (1" x 1" FR4 Board with Minimum Copper)                     Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62961. S15-1510-Rev. B, 29-Jun-15 Document Number: 62961 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix MICRO FOOT®: 4-Bumps (1 mm x 1 mm, 0.5 mm Pitch, 0.286 mm Bump Height) 4x Ø b1 S D G 4x 0.30 to 0.31 (Note 3) Solder mask-0.4 s e e XXXX XXX S D Mark on backside of die s e e D Recommended land pattern A2 b A1 A b1 Note 5 K Bump (Note 1) Notes 1. Bumps are 95.5/3.8/0.7 Sn/Ag/Cu. 2. Backside surface is coated with a Ti/Ni/Ag layer. 3. Non-solder mask defined copper landing pad. 4. Laser mark on the backside surface of die. 5. “b1” is the diameter of the solderable substrate surface, defined by an opening in the solder resist layer solder mask defined. 6. • is the location of pin 1 DIM. MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 0.458 0.504 0.550 0.0180 0.0198 0.0217 A1 0.214 0.250 0.286 0.0084 0.0098 0.0113 A2 0.244 0.254 0.264 0.0096 0.0100 0.0104 b 0.297 0.330 0.363 0.0117 0.0130 0.0143 b1 0.250 e 0.500 0.0098 0.0197 s 0.210 0.230 0.250 0.0083 0.0091 0.0096 D 0.920 0.960 1.000 0.0362 0.0378 0.0394 K 0.029 0.065 0.102 0.0011 0.0026 0.0040 Note • Use millimeters as the primary measurement. ECN: T15-0176-Rev. A, 27-Apr-15 DWG: 6039 Revision: 27-Apr-15 1 Document Number: 69370 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000