SI8435DB-T1-E1

Si8435DB Vishay Siliconix P-Channel 1.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.041 at VGS = - 4.5 V - 10.0 0.048 at VGS = - 2.5 V - 9.32 0.058 at VGS = - 1.8 V - 8.48 0.075 at VGS = - 1.5 V - 7.45 VDS (V) - 20 Qg (Typ.) • TrenchFET® Power MOSFET • Ultra Small MICRO FOOT® Chipscale RoHS Packaging Reduces Footprint Area, Profile COMPLIANT (0.62 mm) and On-Resistance Per Footprint Area 22 nC APPLICATIONS • Low Threshold Load Switch for Portable Devices - Low Power Consumption - Increased Battery Life S MICRO FOOT Bump Side V iew 3 Backside V iew 2 D D G 8435 XXX S 4 G 1 Device Marking: 8435 xxx = Date/Lot Traceability Code D Ordering Information: Si8435DB-T1-E1 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ID IDM TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IS PD Limit - 20 ±5 - 10.0 - 8.06 - 6.72b,c - 5.37b,c - 15 - 5.21 - 2.31b,c 6.25 4.0 2.78b,c 1.78b,c - 55 to 150 260 TJ, Tstg IR/Convection Package Reflow Conditionsd Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1” x 1” FR4 board. c. t = 10 s. d. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering. e. In this document, any reference to the Case represents the body of the MICRO FOOT device and Foot is the bump. Document Number: 73559 S-82119-Rev. D, 08-Sep-08 Unit V A W °C www.vishay.com 1 Si8435DB Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a,b Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Steady State Symbol Typical Maximum RthJA 35 45 RthJF 16 20 Unit °C/W Notes: a. Surface Mounted on 1“ x 1“ FR4 board. b. Maximum under Steady State conditions is 72 °C/W. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ V - 15.5 ID = - 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.0 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 5 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V , TJ = 70 °C - 10 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS ≤ - 5 V, VGS = - 4.5 V 2.5 - 0.35 - 15 µA A VGS = - 4.5 V, ID = - 1 A 0.034 0.041 VGS = - 2.5 V, ID = - 1 A 0.040 0.048 VGS = - 1.8 V, ID = - 1 A 0.048 0.058 VGS = - 1.5 V, ID = - 1 A 0.055 0.075 VDS = - 10 V, ID = - 1 A 10.5 16 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time www.vishay.com 2 1600 VDS = - 10 V, VGS = 0 V, f = 1 MHz 175 VDS = - 10 V, VGS = - 5 V, ID = - 1 A VDS = - 16 V, VGS = - 4.5 V, ID = - 1 A td(off) tf 23 35 22 33 3.25 nC 1.95 VGS = - 0.1 V, f = 1 MHz td(on) tr pF 265 15 VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 1 Ω Ω 20 23 29 44 230 345 91 137 ns Document Number: 73559 S-82119-Rev. D, 08-Sep-08 Si8435DB Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time TC = 25 °C - 5.21 A - 15 IS = - 1 A, VGS = 0 V IF = - 1 A, dI/dt = 100 A/µs, TJ = 25 °C 0.6 1.2 V 116 174 ns 203 305 nC ta 45 tb 71 Reverse Recovery Rise Time Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. ns Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 6 15 VGS = 5 V thru 2 V 5 I D - Drain Current (A) I D - Drain Current (A) 12 9 VGS = 1.5 V 6 3 4 3 2 1 VGS = 10 V 0 0.0 0 0.6 1.2 1.8 2.4 3.0 0.0 0.3 0.6 0.9 1.2 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Document Number: 73559 S-82119-Rev. D, 08-Sep-08 1.5 www.vishay.com 3 Si8435DB Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1.6 0.12 1.4 0.10 R DS(on) - On-Resistance (Normalized) R DS(on) - D to S On-Resistance (Ω) ID = 1 A 0.08 VGS = 1.5 V VGS = 1.8 V 0.06 VGS = 2.5 V 0.04 VGS = 4.5 V, 2.5 V 1.2 VGS = 1.8 V, 1.5 V 1.0 0.8 VGS = 4.5 V 0.6 - 50 0.02 0 3 6 9 12 15 - 25 0 25 50 75 100 125 150 TJ - Junction T emperature (°C) ID - Drain Current (A) RDS(on) vs. Drain Current On-Resistance vs. Junction Temperature 2500 10 I S - Source Current (A) C - Capacitance (pF) 2000 C iss 1500 1000 1 TA = 150 °C TA = 25 °C 0.1 500 Coss Crss 0.01 0.2 0 0 4 8 12 16 20 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) VDS - Drain-Source Voltage (V) Capacitance Forward Diode Voltage vs. Temp. 0.12 5 ID = 1 A 0.10 4 R DS(on) - On-Resistance (Ω) VGS - Gate-to-Source Voltage (V) ID = 1 A VDS = 10 V 3 VDS = 16 V 2 1 0.08 TA = 125 °C 0.06 0.04 TA = 25 °C 0.02 0 0 0 5 10 15 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 20 1 2 3 4 5 25 VGS - Gate-to-Source Voltage (V) RDS(on) vs. VGS vs Temperature Document Number: 73559 S-82119-Rev. D, 08-Sep-08 Si8435DB Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 0.7 12 0.6 I D - Drain Current (A) VGS(th) (V) 0.5 0.4 0.3 0.2 8 4 0.1 0 - 25 0 25 50 75 100 125 150 0 25 50 75 100 TJ - Temperature (°C) TC - Case Temperature (°C) Threshold Voltage Current Derating** 80 8 60 6 Power (W) Power (W) 0.0 - 50 40 20 125 150 125 150 4 2 0 0 0.001 0.01 0.1 1 10 0 25 50 75 100 Case Temperature ( °C) Time (s) Power Derating Single Pulse Power, Juncion-to-Ambient 100 Limited by R DSon* IDM Limited I D – Drain Current (A) 10 P (t) = 10 ms P (t) = 100 ms 1 P (t) = 1 s P (t) = 10 s DC 0.1 TA = 25 °C Single Pulse 0.01 ** The power dissipation PD is based on TJ(max) = 150 °C, using BVDSS Limited junction-to-foot thermal resistance, and is more useful in settling the 0.001 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which RDS(on) is specified upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Safe Operating Area, Junction-to-Ambient Document Number: 73559 S-82119-Rev. D, 08-Sep-08 www.vishay.com 5 Si8435DB Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 72 °C/W 3. T JM - T A = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 100 10 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot www.vishay.com 6 Document Number: 73559 S-82119-Rev. D, 08-Sep-08 Si8435DB Vishay Siliconix PACKAGE OUTLINE MICRO FOOT: 4-BUMP (2 x 2, 0.8 mm PITCH) 4 x ∅ 0.30 ~ 0.31 Note 3 Solder Mask ∅ ~ 0.40 e A2 Silicon A A1 Bump Note 2 b Diameter e S Recommended Land E e 8435 XXX e S D Mark on Backside of Die Notes (Unless Otherwise Specified): 1. Laser mark on the silicon die back, coated with a thin metal. 2. Bumps are Sn/Ag/Cu. 3. Non-solder mask defined copper landing pad. 4. The flat side of wafers is oriented at the bottom. Dim. Millimetersa Inches Min. Max. Min. Max. A 0.600 0.650 0.0236 0.0256 A1 0.260 0.290 0.0102 0.0114 A2 0.340 0.360 0.0134 0.0142 b 0.370 0.410 0.0146 0.0161 D 1.520 1.600 0.0598 0.0630 E 1.520 1.600 0.0598 0.0630 e 0.750 0.850 0.0295 0.0335 S 0.370 0.380 0.0146 0.0150 Notes: a. Use millimeters as the primary measurement. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73559. Document Number: 73559 S-82119-Rev. D, 08-Sep-08 www.vishay.com 7 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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