SI8469DB-T2-E1

Si8469DB www.vishay.com Vishay Siliconix P-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY -8 • TrenchFET® power MOSFET RDS(on) (Ω) ID (A) a, e 0.064 at VGS = -4.5 V -4.6 0.076 at VGS = -2.5 V -4.2 0.115 at VGS = -1.5 V -3.4 0.180 at VGS = -1.2 V -1.2 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S 2 APPLICATIONS VDS (V) Qg (TYP.) • Ultra-Small 1 mm x 1 mm maximum outline • Ultra-thin 0.548 mm maximum height 6.9 nC MICRO FOOT® 1 x 1 1 x xxx xx x S 3 m m m 1m Backside View 1 S • Load switches, battery switches and charger switches in portable device applications 1 G G • Load switch for 1.2 V power line 4 D Bump Side View Marking Code: xxxx = 8469 xxx = Date / lot traceability code D P-Channel MOSFET Ordering Information: Si8469DB-T2-E1 (lead (Pb)-free and halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS -8 Gate-Source Voltage VGS ±5 TA = 70 °C TA = 25 °C -3.7 a ID -3.6 b -2.8 b TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current IDM TA = 25 °C TA = 25 °C Maximum Power Dissipation TA = 25 °C -1.4 a IS -0.6 b 1.8 a 1.1a PD Package Reflow Conditions c W 0.78 b 0.5 b TA = 70 °C Operating Junction and Storage Temperature Range A -15 TA = 25 °C TA = 70 °C V -4.6 a TA = 25 °C Continuous Drain Current (TJ = 150 °C) UNIT TJ, Tstg -55 to +150 VPR 260 IR/Convection 260 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum Junction-to-Ambient f, g t = 10 s Maximum Junction-to-Ambient h, i t = 10 s RthJA TYPICAL MAXIMUM 55 70 125 160 UNIT °C/W Notes a. Surface mounted on 1" x 1" FR4 board with full copper, t = 10 s. b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 10 s. c. Refer to IPC/JEDEC® (J-STD-020), no manual or hand soldering. d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump. e. Based on TA = 25 °C. f. Surface mounted on 1" x 1" FR4 board with full copper. g. Maximum under steady state conditions is 100 °C/W. h. Surface mounted on 1" x 1" FR4 board with minimum copper. i. Maximum under steady state conditions is 190 °C/W. S15-1510-Rev. B, 29-Jun-15 Document Number: 67091 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8469DB www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = -250 μA -8 - - - V -6.4 - - 2.4 - Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ ID = -250 μA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250 μA -0.35 - -0.8 V IGSS VDS = 0 V, VGS = ± 5 V - - ± 100 nA VDS = -8 V, VGS = 0 V - - -1 VDS = -8 V, VGS = 0 V, TJ = 70 °C - - -10 VDS ≤ -5 V, VGS = -4.5 V -10 - - VGS = -4.5 V, ID = -1.5 A - 0.052 0.064 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Current a ID(on) Drain-Source On-State Resistance a Forward RDS(on) Transconductance a gfs VGS = -2.5 V, ID = -1 A - 0.062 0.076 VGS = -1.5 V, ID = -0.3 A - 0.085 0.115 VGS = -1.2 V, ID = -0.3 A - 0.110 0.180 VDS = -4 V, ID = -1.5 A - 12 - - 900 - - 315 - - 260 - - 11 17 - 0.85 - - 2.5 - μA A Ω S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VDS = -4 V, VGS = 0 V, f = 1 MHz VDS = -4 V, VGS = -4.5 V, ID = -1.5 A Rg VGS = -0.1 V, f = 1 MHz td(on) tr td(off) VDD = -4 V, RL = 2.7 Ω ID ≅ -1.5 A, VGEN = -4.5 V, Rg = 1 Ω tf - 6 - - 15 30 - 22 45 - 35 70 - 17 35 pF nC Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TA = 25 °C IS = -1.5 A, VGS = 0 V IF = -1.5 A, dI/dt = 100 A/μs, TJ = 25 °C - - -1.5 - - -15 - -0.9 -1.3 V - 25 50 ns - 10 20 nC - 10 - - 15 - A ns Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1510-Rev. B, 29-Jun-15 Document Number: 67091 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8469DB www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 15 5 V GS = 5 V thru 2 V 4 V GS = 1.5 V ID - Drain Current (A) ID - Drain Current (A) 12 9 6 3 3 2 T C = 25 °C 1 V GS = 1 V T C = 125 °C V GS = 0.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 T C = - 55 °C 0 3.0 VDS - Drain-to-Source Voltage (V) 0.0 0.3 0.6 0.9 1.2 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.20 1.5 1500 V GS = 1.2 V 1200 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) V GS = 1.5 V 0.16 0.12 0.08 V GS = 2.5 V 0.04 900 Ciss 600 Coss 300 V GS = 4.5 V Crss 0.00 0 0 3 6 9 ID - Drain Current (A) 12 15 0 2 4 6 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.3 6 RDS(on) - On-Resistance (Normalized) ID = 1.5 A VGS - Gate-to-Source Voltage (V) 8 5 V DS = 4 V 4 V DS = 2 V 3 V DS = 6.4 V 2 1 0 0 3 6 9 Qg - Total Gate Charge (nC) Gate Charge S15-1510-Rev. B, 29-Jun-15 12 15 V GS = 1.5 V; I D = 0.3 A 1.2 V GS = 2.5 V; 4.5 V; I D = 1.5 A 1.1 V GS = 1.2 V, 0.3 A 1.0 0.9 0.8 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 150 On-Resistance vs. Junction Temperature Document Number: 67091 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8469DB www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.16 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 1.5 A T J = 150 °C 10 T J = 25 °C 1 0.1 0.0 0.12 0.08 T J = 125 °C 0.04 T J = 25 °C 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Source-to-Drain Voltage (V) 0 2 3 4 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.7 1 5 25 0.6 20 ID = 250 μA Power (W) VGS(th) (V) 0.5 0.4 15 10 0.3 5 0.2 0.1 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 150 Threshold Voltage 0 0.001 0.01 0.1 1 Time (s) 10 100 1000 Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on) * 100 μs ID - Drain Current (A) 10 1 ms 1 10 ms 100 ms 1 s, 10 s DC 0.1 TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 10 1 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S15-1510-Rev. B, 29-Jun-15 Document Number: 67091 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8469DB www.vishay.com Vishay Siliconix 5 1.5 4 1.2 Power Dissipation (W) ID - Drain Current (A) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 3 2 1 0.9 0.6 0.3 0 0.0 0 25 50 75 100 125 TA - Ambient Temperature (°C) Current Derating a 150 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating Note • When mounted on 1" x 1" FR4 with full copper. Note a. The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S15-1510-Rev. B, 29-Jun-15 Document Number: 67091 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8469DB www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 100 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient (1" x 1" FR4 Board with Full Copper) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 190 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient (1" x 1" FR4 Board with Minimum Copper) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67091. S15-1510-Rev. B, 29-Jun-15 Document Number: 67091 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix MICRO FOOT®: 4-Bumps (1 mm x 1 mm, 0.5 mm Pitch, 0.286 mm Bump Height) 4x Ø b1 S D G 4x 0.30 to 0.31 (Note 3) Solder mask-0.4 s e e XXXX XXX S D Mark on backside of die s e e D Recommended land pattern A2 b A1 A b1 Note 5 K Bump (Note 1) Notes 1. Bumps are 95.5/3.8/0.7 Sn/Ag/Cu. 2. Backside surface is coated with a Ti/Ni/Ag layer. 3. Non-solder mask defined copper landing pad. 4. Laser mark on the backside surface of die. 5. “b1” is the diameter of the solderable substrate surface, defined by an opening in the solder resist layer solder mask defined. 6. • is the location of pin 1 DIM. MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 0.458 0.504 0.550 0.0180 0.0198 0.0217 A1 0.214 0.250 0.286 0.0084 0.0098 0.0113 A2 0.244 0.254 0.264 0.0096 0.0100 0.0104 b 0.297 0.330 0.363 0.0117 0.0130 0.0143 b1 0.250 e 0.500 0.0098 0.0197 s 0.210 0.230 0.250 0.0083 0.0091 0.0096 D 0.920 0.960 1.000 0.0362 0.0378 0.0394 K 0.029 0.065 0.102 0.0011 0.0026 0.0040 Note • Use millimeters as the primary measurement. ECN: T15-0176-Rev. A, 27-Apr-15 DWG: 6039 Revision: 27-Apr-15 1 Document Number: 69370 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000