SI8481DB-T1-E1

Si8481DB www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES MICRO FOOT® 1.6 x 1.6 D 3 6 1. x xxx xx x m m 1 1.6 Backside View mm • TrenchFET® Gen III p-channel power MOSFET D 2 • Low 0.6 mm maximum height • Low on-resistance 1 G 4 S Bump Side View APPLICATIONS S • Load switch PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -4.5 V RDS(on) max. () at VGS = -2.5 V RDS(on) max. () at VGS = -1.8 V Qg typ. (nC) ID (A) Configuration • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 -20 0.021 0.025 0.039 31.2 -9.7 a Single - With low voltage drop • Power management in batteryoperated, mobile, and wearable devices G P-Channel MOSFET D ORDERING INFORMATION Package Lead (Pb)-free and halogen-free MICRO FOOT Si8481DB-T1-E1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) SYMBOL LIMIT VDS VGS -20 ±8 -9.7 a -7.8 a -6.2 b -5 b -30 -2.3 a -0.92 b 2.8 a 1.8 a 1.1 b 0.73 b -55 to +150 ID IDM TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range Continuous source-drain diode current Package reflow conditions c IS PD TJ, Tstg VPR IR / convection UNIT V A W °C 260 THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient a, f Maximum junction-to-ambient b, g SYMBOL t5s RthJA TYPICAL MAXIMUM 35 45 85 110 UNIT °C/W Notes a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s. b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s. c. Refer to IPC / JEDEC® (J-STD-020), no manual or hand soldering. d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump. e. Based on TA = 25 °C. f. Maximum under steady state conditions is 85 °C/W. g. Maximum under steady state conditions is 175 °C/W. S16-2380-Rev. A, 21-Nov-16 Document Number: 75264 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8481DB www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = -250 μA -20 - - - V -13 - - 2.5 - Static Drain-source breakdown voltage VDS temperature coefficient VDS/TJ VGS(th) temperature coefficient VGS(th)/TJ ID = -250 μA Gate-source threshold voltage mV/°C VGS(th) VDS = VGS, ID = -250 μA -0.4 - -0.9 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 8 V - - ± 100 nA Zero gate voltage drain current IDSS On-state drain current a Drain-source on-state resistance a Forward transconductancea VDS = -20 V, VGS = 0 V - - -1 VDS = -20 V, VGS = 0 V, TJ = 55 °C - - -10 ID(on) VDS  -5 V, VGS = -4.5 V -5 - - VGS = -4.5 V, ID = -3 A - 0.017 0.021 RDS(on) VGS = -2.5 V, ID = -3 A - 0.020 0.025 VGS = -1.8 V, ID = -1 A - 0.026 0.039 VDS = -5 V, ID = -3 A - 22 - - 2500 - VDS = -10 V, VGS = 0 V, f = 1 MHz - 320 - - 260 - gfs μA A  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = -10 V, VGS = -8 V, ID = -3 A - 54 81 VDS = -10 V, VGS = -4.5 V, ID = -3 A - 31.2 47 - 2.7 - VDS = -10 V, VGS = -4.5 V, ID = -3 A f = 1 MHz td(on) tr VDD = -10 V, RL = 3.3 , ID  -3 A, VGEN = -4.5 V, Rg = 1  - 6.3 - - 17 - - 16 30 - 25 50 - 300 600 tf - 110 220 td(on) - 7 15 td(off) tr td(off) VDD = -10 V, RL = 3.3 , ID  -3 A, VGEN = -8 V, Rg = 1  tf - 20 40 - 400 800 - 110 220 pF nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TA = 25 °C IS = -3 A, VGS = 0 V IF = -3 A, dI/dt = 100 A/μs, TJ = 25 °C - - -2.3 c - - -15 A - -0.8 -1.2 V - 150 300 ns - 235 470 nC - 47 - - 103 - ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.  Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-2380-Rev. A, 21-Nov-16 Document Number: 75264 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8481DB www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 0.05 10000 30 10000 1000 VGS = 1.5 V 15 100 10 5 VGS = 1 V 0 10 0 0.5 1 1.5 2 2.5 0.04 VGS = 2.5 V 0.02 100 VGS = 4.5 V 0.01 0 10 0 3 5 10 25 30 Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Axis Title VGS = 4.5 V 25 VGS = 2.5 V 1000 1.2 VGS = 1.8 V 1.1 1.0 100 0.9 2nd line ID - Drain Current (A) 1.3 1000 20 1st line 2nd line ID = 3 A 10000 30 10000 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 20 ID - Drain Current (A) 2nd line Axis Title 15 10 100 TC = 25 °C 5 0.8 TC = 125 °C 0.7 -25 0 25 50 75 TC = -55 °C 0 10 -50 100 125 150 10 0 0.5 1 1.5 TJ - Junction Temperature (°C) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line On-Resistance vs. Junction Temperature Transfer Characteristics 10000 3500 ID = 3 A 10000 VDS = 10 V VDS = 5 V 100 2 VDS = 16 V Ciss 2500 1000 1st line 2nd line 1st line 2nd line 1000 2nd line C - Capacitance (pF) 3000 6 4 2 Axis Title Axis Title 8 2nd line VGS - Gate-to-Source Voltage (V) 15 VDS - Drain-to-Source Voltage (V) 2nd line 1.5 1.4 1000 VGS = 1.8 V 0.03 1st line 2nd line 20 1st line 2nd line 2nd line ID - Drain Current (A) 25 2nd line RDS(on) - On-Resistance (Ω) VGS = 5 V thru 2 V 2000 1500 100 1000 Coss 500 Crss 0 10 0 10 20 30 40 50 0 10 0 5 10 15 Qg - Total Gate Charge (nC) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line Gate Charge Capacitance S16-2380-Rev. A, 21-Nov-16 20 Document Number: 75264 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8481DB www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 0.04 10000 1000 TJ = 25 °C 1 100 0.1 0.02 TJ = 25 °C 0.2 0.4 0.6 0.8 1.0 100 0.01 10 0 1000 TJ = 150 °C 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) TJ = 150 °C 10 1st line 2nd line 2nd line IS - Source Current (A) ID = 3 A 0.03 0 0 1.2 1 2 3 4 5 10 VSD - Source-to-Drain Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title 10000 0.7 80 60 Power (W) 1000 0.5 1st line 2nd line 2nd line VGS(th) (V) 0.6 0.4 0.3 40 100 ID = 250 μA 20 0.2 0.1 0 0.001 10 -50 -25 0 25 50 75 100 125 150 0.01 0.1 TJ - Temperature (°C) 2nd line Threshold Voltage 1 Time (s) 10 100 600 Single Pulse Power, Junction-to-Ambient Axis Title 10000 100 100 μs 10 1000 1 ms 1 1st line 2nd line 2nd line ID - Drain Current (A) Limited by RDS(on) (1) 10 ms 100 ms 1s 10 s DC 0.1 100 TA = 25 °C Single pulse 0.01 10 0.1 (1) 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S16-2380-Rev. A, 21-Nov-16 Document Number: 75264 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8481DB www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 12 10 2.5 1000 100 4 2 1st line 2nd line 6 1000 2 1st line 2nd line 8 2nd line Power (W) 2nd line ID - Drain Current (A) 10000 3 1.5 1 100 0.5 0 10 0 25 50 75 100 125 0 10 25 150 50 75 100 125 TA - Case Temperature (°C) 2nd line TA - Ambient Temperature (°C) 2nd line Current Derating a Power, Junction-to-Ambient a 150 Note a. When surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.    2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 85 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 - 4 10 - 3 4. Surface Mounted 10 - 2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient (on 1" x 1" FR4 board with maximum copper) S16-2380-Rev. A, 21-Nov-16 Document Number: 75264 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8481DB www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 175 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient (on 1" x 1" FR4 board with minimum copper)                                            Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75264. S16-2380-Rev. A, 21-Nov-16 Document Number: 75264 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix MICRO FOOT®: 4-Bumps (1.6 mm x 1.6 mm, 0.8 mm Pitch, 0.290 mm Bump Height) 4x Ø b1 4x 0.30 to .31 (Note 3) Solder mask-0.4 S Mark on backside of die D S G e e Recommended land pattern S XXX D e E XXXX S e S D b Note 5 A1 A A2 b1 K Notes 1. Bumps are 95.5/3.8/0.7 Sn/Ag/Cu. 2. Backside surface is coated with a Ti/Ni/Ag layer. 3. Non-solder mask defined copper landing pad. 4. Laser marks on the silicon die back. 5. “b1” is the diameter of the solderable substrate surface, defined by an opening in the solder resist layer solder mask defined. 6. • is the location of pin 1 DIM. MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 0.550 0.575 0.600 0.0217 0.0226 0.0236 A1 0.260 0.275 0.290 0.0102 0.0108 0.0114 A2 0.290 0.300 0.310 0.0114 0.0118 0.0122 b 0.370 0.390 0.410 0.0146 0.0153 0.0161 b1 0.300 e 0.0118 0.800 0.0314 s 0.360 0.380 0.400 0.0141 0.0150 D 1.520 1.560 1.600 0.0598 0.0614 0.0157 0.0630 E 1.520 1.560 1.600 0.0598 0.0614 0.0630 K 0.155 0.185 0.215 0.0061 0.0073 0.0085 Note • Use millimeters as the primary measurement. ECN: T15-0175-Rev. A, 27-Apr-15 DWG: 6038 Revision: 27-Apr-15 1 Document Number: 69378 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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