SI8800EDB-T2-E1

Si8800EDB www.vishay.com Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) a 0.080 at VGS = 4.5 V 2.8 VDS (V) 20 0.090 at VGS = 2.5 V 2.6 0.105 at VGS = 1.8 V 2.4 0.150 at VGS = 1.5 V 2.0 MICRO FOOT® 0.8 x 0.8 S 3 xxx xx 8 0. m m m 1 m 0.8 Backside View • TrenchFET® power MOSFET Qg (TYP.) • Ultra small 0.8 mm x 0.8 mm outline • Ultra thin 0.357 mm height 3.2 nC • Typical ESD protection 1500 V • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S 2 APPLICATIONS D • Portable devices such as cell phones, smart phones, and MP3 players - Load switch - Small signal switch 1 G 4 D Bump Side View G Marking Code: xx = AA xxx = Date/Lot traceability code Ordering Information: Si8800EDB-T2-E1 (lead (Pb)-free and halogen-free) R S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 TA = 70 °C 2.2 a ID TA = 25 °C 2b 1.6 b TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current IDM TA = 25 °C 0.7 a IS TA = 25 °C 0.4 b 0.9 a TA = 70 °C 0.6 a PD TA = 25 °C W 0.5 b 0.3 b TA = 70 °C Operating Junction and Storage Temperature Range A 15 TA = 25 °C Maximum Power Dissipation V 2.8 a TA = 25 °C Continuous Drain Current (TJ = 150 °C) UNIT TJ, Tstg -55 to +150 Soldering Recommendations (Peak Temperature) c °C 260 THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a, d Maximum Junction-to-Ambient b, e SYMBOL t≤5s RthJA TYPICAL MAXIMUM 105 135 200 260 UNIT °C/W Notes a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s. b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s. c. Refer to IPC/JEDEC® (J-STD-020), no manual or hand soldering. d. Maximum under steady state conditions is 185 °C/W. e. Maximum under steady state conditions is 330 °C/W. S15-0346-Rev. D, 23-Feb-15 Document Number: 66700 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8800EDB www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 20 - - - V 18 - - -2.3 - 0.4 - 1 Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current a ID(on) Drain-Source On-State Resistance a Forward Transconductance a ID = 250 μA VDS = VGS , ID = 250 μA VDS = 0 V, VGS = ± 4.5 V - - ± 0.5 VDS = 0 V, VGS = ± 8 V - - ±6 VDS = 20 V, VGS = 0 V - - 1 10 VDS = 20 V, VGS = 0 V, TJ = 55 °C - - VDS ≥ 5 V, VGS = 4.5 V 10 - - VGS = 4.5 V, ID = 1 A - 0.066 0.080 VGS = 2.5 V, ID = 1 A - 0.072 0.090 VGS = 1.8 V, ID = 1 A - 0.082 0.105 VGS = 1.5 V, ID = 0.5 A - 0.095 0.150 VDS = 10 V, ID = 1 A - 10 - VDS = 10 V, VGS = 8 V, ID = 1 A - 5.5 8.3 - 3.2 5 - 0.42 - - 0.5 - - 1 - - 65 130 - 85 170 - 900 1800 tf - 350 700 td(on) - 25 50 RDS(on) gfs mV/°C V μA A Ω S Dynamic b Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VDS = 10 V, VGS = 4.5 V, ID = 1 A f = 1 MHz td(on) tr td(off) tr td(off) VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 4.5 V, Rg = 1 Ω VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 8 V, Rg = 1 Ω tf nC kΩ ns - 40 80 - 1100 2200 - 350 700 - - 0.7 - - 15 - 1 1.5 V - 13 25 ns - 5 10 nC - 8 - - 5 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C IS = 1 A, VGS = 0 V IF = 1 A, dI/dt = 100 A/μs, TJ = 25 °C A ns Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-0346-Rev. D, 23-Feb-15 Document Number: 66700 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8800EDB www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10-1 1.2 10-3 I GSS - Gate Current (A) I GSS - Gate Current (mA) 1.5 T J = 25 °C 0.9 0.6 0.3 10-5 T J = 150 °C T J = 25 °C 10-7 10-9 0.0 10-11 0 V GS - Gate-to-Source Voltage (V) 3 6 9 12 V GS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 3 6 9 12 0 15 15 15 5 V GS = 5 V thru 2 V 4 9 I D - Drain Current (A) I D - Drain Current (A) 12 V GS = 1.5 V 6 3 3 2 T C = 25 °C 1 T C = 125 °C V GS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 T C = - 55 °C 0.3 0.6 0.9 1.2 V DS - Drain-to-Source Voltage (V) V GS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.15 1.5 8 VGS - Gate-to-Source Voltage (V) R DS(on) - On-Resistance (Ω) ID = 1 A 0.12 V GS = 1.5 V V GS = 1.8 V 0.09 V GS = 2.5 V 0.06 V GS = 4.5 V 0.03 0.00 V DS = 5 V 6 V DS = 10 V 4 V DS = 16 V 2 0 0 3 6 9 12 15 0 1 2 3 4 ID - Drain Current (A) Qg - Total Gate Charge (nC) On-Resistance vs. Drain Current Gate Charge S15-0346-Rev. D, 23-Feb-15 5 6 Document Number: 66700 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8800EDB www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 V GS = 4.5 V, V GS = 2.5 V, V GS = 1.8 V; I D = 1 A 1.4 1.3 I S - Source Current (A) R DS(on) - On-Resistance (Normalized) 1.5 1.2 1.1 V GS = 1.5 V; I D = 0.5 A 1.0 T J = 150 °C T J = 25 °C 1 0.9 0.8 0.7 - 50 - 25 0 25 50 75 100 125 0.1 0.0 150 0.2 0.6 0.8 1.0 1.2 Source-Drain Diode Forward Voltage On-Resistance vs. Junction Temperature 0.8 0.14 0.7 0.12 ID = 1.5 A; T J = 125 °C 0.6 0.10 0.08 VGS(th) (V) R DS(on) - On-Resistance (Ω) 0.4 V SD - Source-to-Drain Voltage (V) T J - Junction Temperature (°C) ID = 0.5 A; T J = 125 °C 0.4 ID = 1.5 A; T J = 25 °C 0.06 ID = 0.5 A; T J = 25 °C 0.3 0.2 - 50 0.04 0 1 2 3 ID = 250 μA 0.5 4 5 - 25 0 25 50 75 100 125 150 T J - Temperature (°C) V GS - Gate-to-Source Voltage (V) Threshold Voltage On-Resistance vs. Gate-to-Source Voltage 14 12 Power (W) 10 8 6 4 2 0 0.001 0.01 0.1 1 Time (s) 10 100 1000 Single Pulse Power (Junction-to-Ambient) S15-0346-Rev. D, 23-Feb-15 Document Number: 66700 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8800EDB www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 I D - Drain Current (A) Limited by RDS(on) * 10 100 μs 1 1 ms 10 ms TA = 25 °C Single Pulse 0.1 100 ms, 1 s 10 s, DC BVDSS Limited 0.01 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient 3.0 0.8 Power Dissipation (W) I D - Drain Current (A) 2.5 2.0 1.5 1.0 0.6 0.4 0.2 0.5 0.0 0.0 0 25 50 75 100 T A - Ambient Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 T A - Ambient Temperature (°C) Power Derating Note When mounted on 1" x 1" FR4 with full copper. * The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S15-0346-Rev. D, 23-Feb-15 Document Number: 66700 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8800EDB www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 185 °C/W 3. T JM - T A = PDMZthJA(t) Single Pulse 0.01 10 -4 4. Surface Mounted 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 Board with Maximum Copper) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 330 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 Board with Minimum Copper) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?66700. S15-0346-Rev. D, 23-Feb-15 Document Number: 66700 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix MICRO FOOT®: 4-Bump (0.8 mm x 0.8 mm, 0.4 mm Pitch) D S e S e XXX S D S S 4x Ø b G D S AK Mark on Backside of die A2 4-Ø 0.205 to 0.225 Note 5 Solder Mask ~Ø 0.215 A1 A e b k b1 e Bump Note 2 Note 4 Notes (1) Laser mark on the backside surface of die (2) Bumps are 95.5 % Sn,3.8 % Ag,0.7 % Cu (3) “i” is the location of pin 1 (4) “b1” is the diameter of the solderable substrate surface, defined by an opening in the solder resist layer solder mask defined. (5) Non-solder mask defined copper landing pad. DIM. MILLIMETERS a INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 0.328 0.365 0.402 0.0129 0.0144 0.0158 A1 0.136 0.160 0.184 0.0053 0.0062 0.0072 A2 0.192 0.205 0.218 0.0076 0.0081 0.0086 b 0.200 0.220 0.240 0.0078 0.0086 0.0094 b1 0.175 0.0068 e 0.400 0.0157 S 0.160 0.180 0.200 0.0062 0.0070 0.0078 D 0.720 0.760 0.800 0.0283 0.0299 0.0314 K 0.040 0.070 0.100 0.0015 0.0027 0.0039 Note a. Use millimeters as the primary measurement. ECN: T15-0053-Rev. A, 16-Feb-15 DWG: 6033 Revision: 16-Feb-15 1 Document Number: 69442 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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