SI8817DB-T2-E1

Si8817DB www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET MICRO FOOT® 0.8 x 0.8 S 3 xxx xx FEATURES • TrenchFET® power MOSFET S 2 • Small 0.8 mm x 0.8 mm outline area • Low 0.4 mm max. profile 8 0. m m 1 mm 0.8 Backside View • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 G 4 D Bump Side View APPLICATIONS Marking code: AF PRODUCT SUMMARY VDS (V) • Battery management 0.076 RDS(on) max. () at VGS = -2.5 V 0.100 RDS(on) max. () at VGS = -1.8 V 0.145 RDS(on) max. () at VGS = -1.5 V 0.320 Qg typ. (nC) 7.5 ID (A) a, e -2.9 G • DC/DC converters -20 RDS(on) max. () at VGS = -4.5 V Configuration S • Load switches and chargers switches • For smart phones and tablet PCs D P-Channel MOSFET Single ORDERING INFORMATION Package MICRO FOOT 0.8 x 0.8 Lead (Pb)-free and halogen-free Si8817DB-T2-E1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS -20 Gate-source voltage VGS ±8 Continuous drain current (TJ = 150 °C) TA = 25 °C ID Continuous source-drain diode current Maximum power dissipation IDM TC = 25 °C TA = 25 °C IS -2.1 b -0.7 a -0.4 b 0.9 a TA = 70 °C 0.6 a TA = 25 °C PD Operating junction and storage temperature range A -15 TA = 25 °C 0.5 b W 0.3 b TA = 70 °C Package reflow conditions c -2.3 a -1.7 b TA = 70 °C Pulsed drain current (t = 300 μs) V -2.9 a TA = 25 °C TA = 70 °C UNIT TJ, Tstg -55 to +150 VPR 260 IR/convection 260 °C Notes a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s c. Refer to IPC/JEDEC® (J-STD-020), no manual or hand soldering d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump e. Based on TA = 25 °C S15-0346-Rev. B, 23-Feb-15 Document Number: 62759 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8817DB www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum junction-to-ambient a, b t=5s Maximum junction-to-ambient c, d t=5s RthJA TYPICAL MAXIMUM 105 135 200 260 UNIT °C/W Notes a. Surface mounted on 1" x 1" FR4 board with full copper b. Maximum under steady state conditions is 185 °C/W c. Surface mounted on 1" x 1" FR4 board with minimum copper d. Maximum under steady state conditions is 330 °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = -250 μA -20 - - V - -12 - - 2.5 - Static Drain-source breakdown voltage VDS temperature coefficient VDS/TJ VGS(th) temperature coefficient VGS(th)/TJ ID = -250 μA Gate-source threshold voltage mV/°C VGS(th) VDS = VGS, ID = -250 μA -0.4 - -1 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 8 V - - ± 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = -20 V, VGS = 0 V - - -1 VDS = -20 V, VGS = 0 V, TJ = 70 °C - - -10 VDS  -5 V, VGS = -4.5 V -5 - - VGS = -4.5 V, ID = -1 A - 0.061 0.076 VGS = -2.5 V, ID = -1 A - 0.080 0.100 VGS = -1.8 V, ID = -0.5 A - 0.110 0.145 VGS = -1.5 V, ID = -0.5 A - 0.165 0.320 VDS = -10 V, ID = -1 A - 5 - - 615 - VDS = -10 V, VGS = 0 V, f = 1 MHz - 90 - - 75 - μA A  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time S15-0346-Rev. B, 23-Feb-15 VDS = -10 V, VGS = -8 V, ID = -1 A - 12.5 19 - 7.5 12 VDS = -10 V, VGS = -4.5 V, ID = -1 A - 1 - - 1.9 - VGS = -0.1 V, f = 1 MHz - 14 - - 20 40 td(on) tr VDD = -10 V, RL = 10  ID  -1 A, VGEN = -4.5 V, Rg = 1  - 20 40 - 52 100 tf - 22 45 td(on) - 6 15 td(off) tr td(off) tf VDD = -10 V, RL = 10  ID  -1 A, VGEN = -8 V, Rg = 1  - 10 20 - 60 120 - 23 45 pF nC  ns Document Number: 62759 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8817DB www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TA = 25 °C IS = -1 A, VGS = 0 V IF = -1 A, di/dt = 100 A/μs, TJ = 25 °C - - -0.7 - - -15 - -0.75 -1.2 V - 30 60 ns - 14 30 nC - 13 - - 17 - A ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing       Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-0346-Rev. B, 23-Feb-15 Document Number: 62759 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8817DB www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 15 VGS = 5 V thru 3 V VGS = 2.5 V 8 9 ID - Drain Current (A) ID - Drain Current (A) 12 VGS = 2 V 6 3 6 TC = 25 °C 4 TC = 125 °C 2 VGS = 1.5 V TC = - 55 °C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) 0.0 3.0 0.5 1.0 1.5 2.0 VGS - Gate-to-Source Voltage (V) 2.5 Transfer Characteristics Output Characteristics 1000 0.40 VGS = 1.5 V C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 800 0.30 VGS = 1.8 V 0.20 VGS = 2.5 V Ciss 600 400 0.10 200 Coss Crss VGS = 4.5 V 0 0.00 0 3 6 9 ID - Drain Current (A) 12 0 15 4 12 16 20 Capacitance On-Resistance vs. Drain Current and Gate Voltage 1.4 8 ID = 1 A RDS(on) - On-Resistance (Normalized) ID = 1 A VGS - Gate-to-Source Voltage (V) 8 VDS - Drain-to-Source Voltage (V) VDS = 10 V 6 VDS = 5 V VDS = 16 V 4 2 0 0 3 6 9 12 Qg - Total Gate Charge (nC) Gate Charge S15-0346-Rev. B, 23-Feb-15 15 1.3 VGS = 4.5 V, 2.5 V 1.2 VGS = 1.8 V 1.1 VGS = 1.5 V 1.0 0.9 0.8 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 150 On-Resistance vs. Junction Temperature Document Number: 62759 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8817DB www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.40 ID = 1 A RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.32 TJ = 150 °C 10 TJ = 25 °C 1 0.24 0.16 TJ = 125 °C 0.08 TJ = 25 °C 0.1 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 2 3 4 VGS - Gate-to-Source Voltage (V) 5 On-Resistance vs. Gate-to-Source Voltage 0.9 14 0.8 12 10 Power (W) VGS(th) (V) 0.7 0.6 8 6 ID = 250 μA 0.5 4 0.4 0.3 - 50 2 - 25 0 25 50 75 100 125 0 0.001 150 TJ - Temperature (°C) 0.01 0.1 1 Time (s) 10 100 Threshold Voltage Single Pulse Power, Junction-to-Ambient 1000 100 Limited by RDS(on)* ID - Drain Current (A) 10 100 μs 1 1 ms 10 ms 0.1 TA = 25 °C 100 ms 1 s, 10 s DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S15-0346-Rev. B, 23-Feb-15 Document Number: 62759 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8817DB www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.8 3.0 Power Dissipation (W) ID - Drain Current (A) 2.5 2.0 1.5 1.0 0.6 0.4 0.2 0.5 0.0 0.0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating a 125 150 25 50 75 100 125 T A - Ambient Temperature (°C) 150 Power Derating Notes • When mounted on 1" x 1" FR4 with full copper a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S15-0346-Rev. B, 23-Feb-15 Document Number: 62759 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8817DB www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 185 °C/W 3. T JM - T A = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 Board with Maximum Copper) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 330 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 0.0001 0.001 4. Surface Mounted 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 Board with Minimum Copper)                     Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62759. S15-0346-Rev. B, 23-Feb-15 Document Number: 62759 7 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix MICRO FOOT®: 4-Bump (0.8 mm x 0.8 mm, 0.4 mm Pitch) D S e S e XXX S D S S 4x Ø b G D S AK Mark on Backside of die A2 4-Ø 0.205 to 0.225 Note 5 Solder Mask ~Ø 0.215 A1 A e b k b1 e Bump Note 2 Note 4 Notes (1) Laser mark on the backside surface of die (2) Bumps are 95.5 % Sn,3.8 % Ag,0.7 % Cu (3) “i” is the location of pin 1 (4) “b1” is the diameter of the solderable substrate surface, defined by an opening in the solder resist layer solder mask defined. (5) Non-solder mask defined copper landing pad. DIM. MILLIMETERS a INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 0.328 0.365 0.402 0.0129 0.0144 0.0158 A1 0.136 0.160 0.184 0.0053 0.0062 0.0072 A2 0.192 0.205 0.218 0.0076 0.0081 0.0086 b 0.200 0.220 0.240 0.0078 0.0086 0.0094 b1 0.175 0.0068 e 0.400 0.0157 S 0.160 0.180 0.200 0.0062 0.0070 0.0078 D 0.720 0.760 0.800 0.0283 0.0299 0.0314 K 0.040 0.070 0.100 0.0015 0.0027 0.0039 Note a. Use millimeters as the primary measurement. ECN: T15-0053-Rev. A, 16-Feb-15 DWG: 6033 Revision: 16-Feb-15 1 Document Number: 69442 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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