SI8823EDB-T2-E1

Si8823EDB www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET MICRO FOOT® 0.8 x 0.8 S 3 xxx xx • TrenchFET® Gen III p-channel power MOSFET • Compact 0.8 mm x 0.8 mm outline area • Low 0.4 mm max. profile • RDS(on) rating at VGS = -1.5 V 8 0. m m 1 FEATURES S 2 m 8m 0. Backside View 1 G 4 D Bump Side View • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -4.5 V RDS(on) max. () at VGS = -2.5 V RDS(on) max. () at VGS = -1.8 V RDS(on) max. () at VGS = -1.5 V Qg typ. (nC) ID (A) Configuration • Typical ESD protection: 1900 V HBM -20 0.095 0.120 0.200 0.335 6.6 -2.7 a Single S • Load switch • Power management in batteryoperated, mobile, and wearable devices G P-Channel MOSFET D ORDERING INFORMATION Package Lead (Pb)-free and halogen-free MICRO FOOT Si8823EDB-T2-E1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) SYMBOL LIMIT VDS VGS -20 ±8 -2.7 a -2.1 a -1.9 b -1.5 b -15 -0.7 a -0.4 b 0.9 a 0.6 a 0.5 b 0.3 b -55 to +150 ID IDM TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range Continuous source-drain diode current Package reflow conditions c IS PD TJ, Tstg VPR IR / convection UNIT V A W °C 260 THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient a, f Maximum junction-to-ambient b, g SYMBOL t5s RthJA TYPICAL MAXIMUM 105 135 200 260 UNIT °C/W Notes a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s. b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s. c. Refer to IPC / JEDEC® (J-STD-020), no manual or hand soldering. d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump. e. Based on TA = 25 °C. f. Maximum under steady state conditions is 185 °C/W. g. Maximum under steady state conditions is 330 °C/W. S16-1562-Rev. A, 08-Aug-16 Document Number: 76852 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8823EDB www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = -250 μA -20 - - - V -12.5 - - 2.3 - Static Drain-source breakdown voltage VDS temperature coefficient VDS/TJ VGS(th) temperature coefficient VGS(th)/TJ ID = -250 μA Gate-source threshold voltage VGS(th) VDS = VGS , ID = -250 μA -0.4 - -0.8 VDS = 0 V, VGS = ± 4.5 V - - ± 0.5 Gate-source leakage Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward transconductance a IGSS IDSS ID(on) RDS(on) gfs VDS = 0 V, VGS = ± 8 V - - ±5 VDS = -20 V, VGS = 0 V - - -1 VDS = -20 V, VGS = 0 V, TJ = 55 °C - - -10 VDS  -5 V, VGS = -4.5 V -5 - - VGS = -4.5 V, ID = -1 A - 0.077 0.095 VGS = -2.5 V, ID = -1 A - 0.100 0.120 VGS = -1.8 V, ID = -0.5 A - 0.137 0.185 VGS = -1.5 V, ID = -0.5 A - 0.200 0.335 VDS = -5 V, ID = -1 A - 6 - - 580 - - 165 - - 75 - mV/°C V μA A  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = -10 V, VGS = 0 V, f = 1 MHz VDS = -10 V, VGS = -8 V, ID = -1 A - 11 17 VDS = -10 V, VGS = -4.5 V, ID = -1 A - 6.6 10 - 1 - VDS = -10 V, VGS = -4.5 V, ID = -1 A f = 1 MHz td(on) tr VDD = -10 V, RL = 10 , ID  -1 A, VGEN = -4.5 V, Rg = 1  - 1.5 - - 20 - - 16 30 - 30 60 - 60 120 tf - 40 80 td(on) - 7 15 td(off) tr td(off) VDD = -10 V, RL = 10 , ID  -1 A, VGEN = -8 V, Rg = 1  tf - 20 40 - 75 150 - 35 70 pF nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TA = 25 °C IS = -1 A, VGS = 0 V IF = -1 A, dI/dt = 100 A/μs, TJ = 25 °C - - -0.7 - - -15 - -0.8 -1.2 V - 20 40 ns - 7 15 nC - 12.5 - - 7.5 - A ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing.  Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-1562-Rev. A, 08-Aug-16 Document Number: 76852 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8823EDB www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 10-1 0.8 100 2nd line IGSS - Gate Current (A) 1000 TJ = 25 °C 1.2 1st line 2nd line 2nd line IGSS - Gate Current (mA) 10 1.6 0.4 10000 -2 10-3 10-4 1000 10-5 1st line 2nd line 2.0 TJ = 150 °C 10-6 10-7 10 100 TJ = 25 °C -8 10-9 10-10 10 0 0 3 6 9 12 10 0 15 3 6 9 12 15 VGS - Gate-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Gate-Current vs. Gate-Source Voltage Gate-Current vs. Gate-Source Voltage Axis Title Axis Title 15 15 10000 10000 VGS = 5 V thru 2.5 V 6 VGS = 1.5 V 100 3 1000 9 6 1st line 2nd line 1000 VGS = 2 V 9 2nd line ID - Drain Current (A) 12 1st line 2nd line 2nd line ID - Drain Current (A) 12 TC = 25 °C 100 3 TC = 125 °C VGS = 1 V 0 0 0.5 1 1.5 TC = -55 °C 0 10 2 10 0 0.5 1 1.5 2 2.5 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics Axis Title 3 Axis Title 0.5 1000 10000 10000 800 1000 VGS = 1.8 V 0.3 0.2 VGS = 2.5 V 100 0.1 400 100 200 Coss VGS = 4.5 V 0 10 0 3 6 9 12 15 1000 Ciss 600 1st line 2nd line 0.4 2nd line C - Capacitance (pF) 2nd line RDS(on) - On-Resistance (Ω) VGS = 1.5 V Crss 0 0 10 4 8 12 16 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current and Gate Voltage Capacitance S16-1562-Rev. A, 08-Aug-16 20 Document Number: 76852 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8823EDB www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title VDS = 10 V VDS = 5 V 100 2 VDS = 16 V 0 2 4 6 8 10 VGS = 2.5 V, ID = 1 A 1.2 1000 VGS = 1.8 V, ID = 0.5 A 1.1 1.0 100 VGS = 1.5 V, ID = 0.5 A 0.9 0.8 10 0 VGS = 4.5 V, ID = 1 A 1.3 1st line 2nd line 1000 2nd line RDS(on) - On-Resistance (Normalized) 6 1st line 2nd line 2nd line VGS - Gate-to-Source Voltage (V) ID = 1 A 4 10000 1.4 10000 8 10 -50 12 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (°C) 2nd line Gate Charge On-Resistance vs. Junction Temperature Axis Title Axis Title 10 10000 0.20 10000 1 TJ = 25 °C 100 0.1 1000 0.12 0.08 0.2 0.4 0.6 0.8 1.0 100 TJ = 25 °C 0.04 10 0 TJ = 125 °C 1st line 2nd line 1000 2nd line RDS(on) - On-Resistance (Ω) TJ = 150 °C 1st line 2nd line 2nd line IS - Source Current (A) ID = 1 A 0.16 0 10 0 1.2 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title 14 10000 0.90 12 0.60 0.50 ID = 250 μA Power (W) 10 1000 0.70 1st line 2nd line 2nd line VGS(th) (V) 0.80 8 6 100 4 0.40 2 0.30 10 -50 -25 0 25 50 75 100 125 150 TJ - Temperature (°C) 2nd line Threshold Voltage S16-1562-Rev. A, 08-Aug-16 0 0.001 0.01 0.1 1 Time (s) 10 100 1000 Single Pulse Power, Junction-to-Ambient Document Number: 76852 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8823EDB www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 3.0 1000 2.0 1st line 2nd line 2nd line ID - Drain Current (A) 2.5 1.5 1.0 100 0.5 0.0 10 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) 2nd line Current Derating a Axis Title 0.8 10000 100 Limited by RDS(on) (1) 0.4 0.2 10 I D(ON) limited 1000 1 1st line 2nd line 2nd line ID - Drain Current (A) Power Dissipation (W) IDM limited 0.6 100 μs 1 ms 10 ms 0.1 TA = 25 °C Single pulse BVDSS limited 100 10 s, 1 s, 100 ms DC 0.01 0.0 25 50 75 100 125 TA - Ambient Temperature (°C) 150 10 0.1 (1) Power, Junction-to-Ambient 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Note a. The power dissipation PD is based on TJ max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S16-1562-Rev. A, 08-Aug-16 Document Number: 76852 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8823EDB www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.2 0.1 Notes: 0.05 P DM 0.1 t1 t2 t1 1. Duty cycle, D = t2 2. Per unit base = RthJA = 185 °C/W 0.02 Single pulse 0.01 0.0001 0 .0 0 1 3. T JM - T A = P DM Z thJA (t) 4. Surface mounted 0 .0 1 0.1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient (on 1" x 1" FR4 board with maximum copper) 1 Normalized Effective Transient Thermal Impedance Duty cycle=0.5 0.2 Notes: 0.1 0.1 P DM 0.05 t1 t2 t1 1. Duty cycle, D = t2 2. Per unit base = RthJA = 330 °C/W 0.02 3. T JM - T A = P DM Z thJA (t) Single pulse 0.01 0.0001 0 .0 0 1 4. Surface mounted 0 .0 1 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient (on 1" x 1" FR4 board with minimum copper)                     Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?76852. S16-1562-Rev. A, 08-Aug-16 Document Number: 76852 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000