SI9410BDY-T1-GE3

Si9410BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.024 at VGS = 10 V 8.1 0.033 at VGS = 4.5 V 6.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Compliant to RoHS Directive 2002/95/EC D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si9410BDY-T1-E3 (Lead (Pb)-free) Si9410BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a IS TA = 25 °C TA = 70 °C PD 6.2 6.5 5.0 30 2.1 1.2 2.5 1.5 1.6 0.9 TJ, Tstg Operating Junction and Storage Temperature Range V 8.1 IDM Pulsed Drain Current (10 µs Pulse Width) Maximum Power Dissipationa ID Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot Symbol t ≤ 10 s Steady State Steady State RthJA RthJF Typical Maximum 40 50 70 85 20 24 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 72269 S09-0870-Rev. C, 18-May-09 www.vishay.com 1 Si9410BDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. 1.0 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea Diode Forward Voltage a V nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 5 VDS ≥ 5 V, VGS = 10 V RDS(on) Forward Transconductancea 3.0 ± 100 µA 30 A VGS = 10 V, ID = 8.1 A 0.019 0.024 VGS = 4.5 V, ID = 6.9 A 0.026 0.033 gfs VDS = 15 V, ID = 8.1 A 20 VSD IS = 2.1 A, VGS = 0 V 0.8 1.2 15 23 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs VDS = 15 V, VGS = 10 V, ID = 8.1 A Gate-Drain Charge Qgd 2.5 Turn-On Delay Time td(on) 10 15 15 25 VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC 3.2 IF = 2.1 A, dI/dt = 100 A/µs 30 45 11 20 25 50 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 30 VGS = 10 V thru 5 V 4V 24 I D - Drain Current (A) I D - Drain Current (A) 24 18 12 6 18 12 TC = 125 °C 6 3V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 25 °C 3.5 4.0 0 0.0 0.5 1.0 1.5 2.0 - 55 °C 2.5 3.0 3.5 4.0 4.5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 72269 S09-0870-Rev. C, 18-May-09 Si9410BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1200 0.040 1000 0.030 C - Capacitance (pF) R DS(on) - On-Resistance ( ) 0.035 VGS = 4.5 V 0.025 0.020 VGS = 10 V 0.015 Ciss 800 600 400 Coss 0.010 200 0.005 Crss 0 0.000 0 5 10 15 20 25 0 30 5 10 25 30 Capacitance 1.6 10 VGS = 10 V ID = 8.1 A VDS = 15 V ID = 8.1 A 1.4 6 4 (Normalized) 8 RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 20 VDS - Drain-to-Source Voltage (V) I D - Drain Current (A) On-Resistance vs. Drain Current 1.2 1.0 0.8 2 0.6 - 50 0 0 3 6 9 12 15 0 25 50 75 100 125 Qg - Total Gate Charge (nC) Gate Charge On-Resistance vs. Junction Temperature 150 0.10 R DS(on) - On-Resistance (Ω) TJ = 150 °C 10 TJ = 25 °C 1 0.0 - 25 TJ - Junction Temperature (°C) 30 I S - Source Current (A) 15 0.08 0.06 ID = 8.1 A 0.04 0.02 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 72269 S09-0870-Rev. C, 18-May-09 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si9410BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 50 40 ID = 250 µA 0.0 Power (W) V GS(th) Variance (V) 0.2 - 0.2 30 20 - 0.4 10 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 0 10- 3 150 10- 2 10- 1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 600 100 IDM Limited Limited by RDS(on)* P(t) = 0.0001 s ID - Drain Current (A) 10 P(t) = 0.001 s 1 ID(on) Limited P(t) = 0.01 s P(t) = 0.1 s 0.1 P(t) = 1 s TA = 25 °C Single Pulse P(t) = 10 s DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VDS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 70 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72269 S09-0870-Rev. C, 18-May-09 Si9410BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72269. Document Number: 72269 S09-0870-Rev. C, 18-May-09 www.vishay.com 5 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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