Product is End of Life 12/2014
Si9988
Vishay Siliconix
Buffered H-Bridge Driver with Integrate MOSFET
DESCRIPTION
FEATURES
The Si9988 is an integrated, buffered H-bridge with TTL
compatible inputs and the capability of delivering a
continuous 0.65 A at VDD = 5 V (room temperature) at
switching rates up to 200 kHz. Internal logic prevents the
upper and lower outputs of either half-bridge from being
turned on simultaneously. Both outputs may be forced low
(for motor braking) by pulling EN to logic high.
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The Si9988 is available in both standard and lead (Pb)-free,
8-pin TSSOP packages, specified to operate over a voltage
range of 3.8 V to 13.2 V, and the industrial temperature
range of - 40 °C to 85 °C (D suffix).
0.65 A H-bridge
200 kHz switching rate
Shoot-through limited
TTL compatible inputs
3.8 V to 13.2 V operating range
Surface mount packaging
Total RDS(on) for N- and P-channel:
1.8 at VDD = 4.5 V and TA = 85 °C0.65 A H-bridge
APPLICATIONS
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VCM driver
Brushed motor driver
Stepper motor driver
Power converter
Optical disk drives
Power supplies
High performance servo
FUNCTIONAL BLOCK DIAGRAM, PIN CONFIGURATION AND TRUTH TABLE
VDD
TSSOP-8
GND
1
8
OUTB
VDD
2
7
SB
PWM
EN
3
6
SA
4
5
OUTA
Si9988
(2)
(4)
EN
Top View
Shoot-Through
Protection Logic
(3)
PWM
TRUTH TABLE
EN
PWM
OUTA
OUTB
0
0
0
1
0
1
1
0
1
0
0
0
1
1
0
0
(1)
(6)
GND
(5)
SA
(8)
(7)
OUTPUT
A
B
SB
ORDERING INFORMATION
Part Number
Si9988DQ-T1
Si9988DQ-T1-E3
Document Number: 71326
S11-0800-Rev. C, 25-Apr-11
Marking
Temperature Range
Package
988
- 40 °C to 85 °C
Tape and reel
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si9988
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGSa
Parameter
Limit
VDD
Unit
15
Voltage on any Pin with Respect to Ground
- 0.3 to VDD + 0.3
Voltage on Pins 5, 8 with Respect to Ground
- 1 to VDD + 1
Voltage on Pins 6, 7
V
- 0.3 to GND + 1
Peak Output Current
1
Storage Temperature
- 65 to 150
Junction Temperature (TJ)
A
°C
150
Continuos Iout Current (TJ = 135 °C, YDD = 5 V)
TA = 25 °C
0.67
TA = 85 °C
0.47
Power Dissipationb
θJA
Operating Temperature Range
Notes:
a. Device mounted with all leads soldered or welded to PC board.
b. Derate 8.3 mW/°C above 25 °C.
c. TJ = TA + (PD)(θJA), PD = power dissipation.
A
0.83
W
120
°C/W
- 40 to 85
°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE
Parameter
Limit
VDD
Unit
3.8 to 13.2
V
135
°C
Maximum Junction Temperature (TJ)
SPECIFICATIONS
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
VDD = 3.8 to 13.2 V
SA at GND, SB at GND
Limits
D Suffix, - 40 °C to 85 °C
Mina
Typb
Unit
Maxa
Input (EN, PWM)
Input Voltage High
VINH
Input Voltage Low
VINL
Input Current with Input Voltage High
IINH
VIN = 13.2 V
Input Current with Input Voltage Low
IINL
VIN = 0 V
2
1
1
-1
V
µA
Output
Output Voltage
Highc
Output Voltage Lowc
VOUTH
VOUTL
Output V Clamp High
VCLH
Output V Clamp Low
VCLL
IOUT = - 300 mA
IOUT = 300 mA
EN = PWM ≥ 2 V
VDD = 10.8 V
10.55
10.70
VDD = 4.5 V
4.20
4.35
VDD = 3.8 V
3.40
3.62
VDD = 10.8 V
0.09
0.20
VDD = 4.5 V
0.12
0.25
VDD = 3.8 V
0.14
0.30
IOUT = 100 mA
VDD + 0.7
VDD + 1.0
IOUT = - 100 mA
- 1.0
- 0.7
V
V
Supply
EN = 0 V, PWM = 100 kHz, VDD = 5 V
VDD Supply Current
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2
IDD
1.0
1.5
EN = 4.5 V, PWM = 100 kHz, VDD = 5.5 V
60
140
EN = PWM = 4.5 V, VDD = 5.5 V
55
110
mA
µA
Document Number: 71326
S11-0800-Rev. C, 25-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si9988
Vishay Siliconix
SPECIFICATIONS
Parameter
Limits
D Suffix, - 40 °C to 85 °C
Test Conditions
Unless Otherwise Specified
VDD = 3.8 V to 13.2 V
SA at GND, SB at GND
Symbol
Mina
Typb
Unit
Maxa
Dynamic
Propagation Delay - OUTAd
TPLH
300
TPHL
115
TPLH
Propagation Delay - OUTBd
Break-Before-Maked
75
VDD = 5 V, EN = 0 V
TPHL
nS
330
BBMPLH
225
BBMPHL
215
Notes:
a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing, measured TA = 25 °C.
c. Min and Max value measured at TJ = 135 °C.
d. PLH = PWM low to high, PHL = PWM high to low.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
15
300
VDD = 13.2 V
VDD = 3.8 V
250
12
5V
200
9
6
VO U T L (mV)
VO U T H (V)
10.8 V
5V
3
0.2
0.3
0.4
10.8 V
13.2 V
100
3.8 V
0
0.1
150
50
0.5
0.6
0.7
0
0.1
0.8
0.2
0.3
Output Current (A)
0.5
0.6
0.7
0.8
Output Current (A)
Output High Voltage vs. Output Current
Output Low Voltage vs. Output Current
150
5
EN = 4.5 V
f = 100 kHz
EN = 0 V
120
4
90
3
I D D (mA)
I D D - Standby (µA)
0.4
60
30
2
1
0
0
3
5
7
9
11
13
VDD - Supply Voltage (V)
Standby Current vs. Supply Voltage
Document Number: 71326
S11-0800-Rev. C, 25-Apr-11
15
3
5
7
9
11
13
15
VDD - Supply Voltage (V)
Supply Current vs. Supply Voltage
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si9988
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
5
160
f = 100 kHz
EN = 0 V
EN = 4.5 V
140
4
VDD = 13.3 V
VDD = 13.3 V
100
80
5.0 V
60
3
I D D (mA)
I D D - Standby (µA)
120
2
5V
40
3.8 V
1
20
3.8 V
0
- 50
0
50
100
0
- 50
150
- 20
10
40
70
100
130
Temperature (°C)
Temperature (°C)
Supply Current vs. Temperature
Standby Current vs. Temperature
500
16
14
400
VDD = 13.2 V
10
I D D (mA)
Delay Time (ns)
12
8
TPHL
300
200
6
5.0 V
TPLH
4
100
2
3.8 V
0
3.0
0
0
100
200
300
400
500
4.5
6.0
7.5
9.0
10.5
12.0
f - Frequency (kHz)
VDD - Supply Voltage (V)
Supply Current vs. Frequency
Propagation Time (PWM to OUTA) vs. Supply Voltage
350
500
300
250
Brake Time (ns)
Delay Time (ns)
400
TPLH
300
200
200
TPLH
150
TPHL
100
100
0
3.0
TPHL
4.5
6.0
7.5
50
9.0
10.5
12.0
0
3.0
4.5
6.0
7.5
9.0
10.5
12.0
VDD - Supply Voltage (V)
VDD - Supply Voltage
Propagation Time (PWM to OUTB) vs. Supply Voltage
Brake_Before_Make Time vs. Supply Voltage
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Document Number: 71326
S11-0800-Rev. C, 25-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si9988
Vishay Siliconix
TIMING WAVEFORMS
PWM:
OUT B:
TPLH
BBM PLH
OUT A:
BBM PHL
TPHL
EN
PWM
OUTA
OUTB
Figure 1.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?71326.
Document Number: 71326
S11-0800-Rev. C, 25-Apr-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
TSSOP:
8-LEAD (POWER IC ONLY)
JEDEC Part Number: MO-153
R 0.10
Corners)
e
A1
A
A2
D
0.25 (Gage Plane)
E1
MILLIMETERS
E
C
B
Document Number: 72803
28-Jan-04
L
R 0.10
(4 Corners)
L1
oK1
Dim
A
A1
A2
B
C
D
E
E1
e
L
L1
Y
oK1
Min
Nom
Max
−
−
1.20
0.05
0.10
0.15
0.80
1.00
1.05
0.19
0.28
0.30
−
0.127
−
2.90
3.00
3.10
6.20
6.40
6.60
4.30
4.40
4.50
−
0.65
−
0.45
0.60
0.75
0.90
1.00
1.10
−
−
0.10
0_
3_
6_
ECN: S-40079—Rev. A, 02-Feb-04
DWG: 5908
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Legal Disclaimer Notice
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Vishay
Disclaimer
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Revision: 01-Jan-2022
1
Document Number: 91000